Professor Chennupati Jagadish
AC, PhD, FAA, FTSE, FTWAS, FNAI, FNA, FASc, FAPAS, FIEEE, FAPS, FMRS, FAAAS, FOSA, FECS, FAVS,FIET, FIoP, FIoN, FAIP, FSPIE, FEMA, FAPAM, Hon Mem MRSI
Distinguished Professor
ANU College of Science
Areas of expertise
- Condensed Matter Physics 0204
- Elemental Semiconductors 091204
- Surfaces And Structural Properties Of Condensed Matter 020406
- Nanoelectronics 100705
- Photonics, Optoelectronics And Optical Communications 020504
- Materials Engineering 0912
- Synthesis Of Materials 030306
- Photonics And Electro Optical Engineering (Excl. Communications) 090606
- Electronic And Magnetic Properties Of Condensed Matter; Superconductivity 020404
- Nonlinear Optics And Spectroscopy 020503
- Nanomaterials 100708
- Compound Semiconductors 091203
- Electrical And Electronic Engineering 0906
- Nanotechnology 1007
- Optical Physics 0205
Research interests
Our research interests are based on compound semiconductor optoelectronics, nanotechnology, photovoltaics and materials science.
Compound Semiconductor Nanotechnology
- Epitaxial Growth of Quantum Dots and Nanowires
- Optical and Electronic Processes in Quantum Dots and Nanowires
- Nano-Optoelectronics and Nano-Photonics
Compound Semiconductor Optoelectronics (III-V semiconductors)
- Quantum Well, Quantum Dot and Nanowire Lasers
- Quantum Well and Quantum Dot Infrared Photodetectors
- Saturable Absorbers, Optical Modulators, Waveguides and Switches
- Photonic Integrated Circuits, THz Photonics and Photonic Crystals
- Plasmonics and Metamaterials
Compound Semiconductor Materials Science
- Epitaxial growth of III-V semiconductors
- Defects in semiconductors (ion implantation, plasma processing)
- Zinc Oxide - Doping, Defects and Processing
- Selective Area Epitaxy, Quantum Well / Dot Intermixing
Engineering of Neuron growth using nanowires towards "Brain on a Chip"
- Understanding of growth of neuronal networks using nanowires jointly with JCSMR and RSEng, CECS
High Efficiency Compound Semiconductor Photovoltaics
- High Efficiency Multi-junction III-V semiconductor Solar Cells
- Novel Quantum Dot III-V semiconductor Solar Cells
- III-V Semiconductor Nanowires for Solar Cells
Biography
Jagadish received the B.Sc. (Nagarjuna), M.Sc(Tech) (Andhra), M.Phil. and Ph.D. (Delhi) degrees in 19977, 1980, 1982 and 1986. He was a Lecturer in Physics and Electronics at S.V. College, University of Delhi, during 1985-88 and worked at Queen’s University, Kingston, Canada, during 1988-90 as a post-doctoral research fellow. He moved to ANU in 1990 and is currently Distinguished Professor and Head of Semiconductor Optoelectronics and Nanotechnology Group in the Department of EME, RSPE, the ANU. He is also serving as Director of ANFF, ACT node and Convenor of the Australian Nanotechnology Network. He has served as Vice-President and Secretary Physical Sciences of the Australian Academy of Science and current serving as President of the IEEE Photonics Society and Australian MRS. His research interests include compound semiconductor optoelectronics, neuroscience and nanotechnology. He holds honorary appointments at UESTC, Chengdu, Nanjing, Tokyo, Anna and Mangalore Universities.
He has published more than 880 research papers (600 journal papers), 5 US patents assigned, co-authored a book, co-edited 11 books, guest edited 15 special issues of journals and edited 12 conference proceedings. He is a Fellow of the IEEE, APS, MRS, OSA, AVS, ECS, AIP, IoP, IoN, IET, AAAS, SPIE, EMA, APAM, APAS, IASc, INSA, NAI, TWAS, ATSE and AAS and Hon Mem MRSI. He is serving as an Editor of 3 journals, an Associate Editor of 3 Journals and an editorial board member of 15 journals. He received Peter Baume Award, Federation Fellowship (2004-2009) and Laureate Fellowship (2009-20014). He received 2010 The Quantum Device Award from the ISCS. He has been awarded IEEE Photonics Society (IPS) 2010 Distinguished Service Award, 2011 IEEE NTC Distinguished Service Award, 2010 Top Supervisor Award for excellence by the ANU, 2012 EPD Division award of the ECS, 2013 Boas Medal from the AIP, 2015 IEEE Nanotechnology Pioneer Award, IPS Engineering Achievement Award, Distinguished Fellow of CAS,Silver Jubilee International Award from MRSIndia,2016 OSA Nick Holonyak Jr Award, 2017, IUMRS Somiya Award, 2017 Nayudamma Award. He has received Australia's highest civilian honour, Companion of the Order of Australia (AC) in 2016 for his service to physics and engineering, in particular nanotechnology.
Publications
- Lee, Y, Yang, I, Tan, H et al. 2020, 'Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap', ACS Applied Materials and Interfaces, vol. 12, no. 32, pp. 36380-36388.
- Tournet, J, Lee, Y, Karuturi, S et al. 2020, 'III-V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects', ACS Energy Letters, vol. 5, no. 2, pp. 611-622.
- Volkovskaya, I, Smirnova, D, Xu, L et al. 2020, 'Multipolar analysis of second-harmonic generation in (111) Gallium Arsenide nanoparticles', 4th International Conference on Metamaterials and Nanophotonics, METANANO 2019, IOP Publishing, United Kingdom, pp. 1-4.
- Karuturi*, S, Shen* (co-first author, co-corresponding author), H, Sharma, A et al. 2020, 'Over 17% Efficiency Stand-Alone Solar Water Splitting Enabled by Perovskite-Silicon Tandem Absorbers', Advanced Energy Materials, vol. 10, no. 28, pp. 1-9.
- Wong Leung, Y, Yang, I, Li, Z et al. 2019, 'Engineering III-V Semiconductor Nanowires for Device Applications', Advanced Materials, vol. 32, no. 18, p. 1904359.
- Alanis, J, Chen, Q, Lysevych, M et al. 2019, 'Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization', Nanoscale Advances, vol. 1, no. 11, pp. 4393-4397.
- Yu, P, Besteiro, L, Huang, Y et al. 2019, 'Broadband Metamaterial Absorbers', Advanced Optical Materials, vol. 7, no. 3, pp. 1-32.
- Yew, R, Karuturi, S, Liu, J et al. 2019, 'Exploiting defects in TiO2 inverse opal for enhanced photoelectrochemical water splitting', Optics Express, vol. 27, no. 2, pp. 761-773.
- Mirkhaydarov, B, Votsi, H, Sahu, A et al. 2019, 'Solution-Processed InAs Nanowire Transistors as Microwave Switches', Advanced Electronic Materials, vol. 5, no. 1, pp. 1-8.
- Alanis, J, Lysevych, M, Burgess, T et al. 2019, 'Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing', Nano Letters, vol. 19, no. 1, pp. 362-368.
- Camacho Morales, M, Bautista, G, Zang, X et al. 2019, 'Resonant harmonic generation in AlGaAs nanoantennas probed by cylindrical vector beams', Nanoscale, vol. 11, no. 4, pp. 1745-1753.
- Sautter, J, Xu, L, Miroshnichenko, A et al. 2019, 'Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas', Nano Letters, vol. 19, no. 6, pp. 3905-3911.
- Narangari, P, Karuturi, S, Wu, Y et al. 2019, 'Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells', Nanoscale, vol. 11, no. 15, pp. 7497-7505.
- Butson, J, Narangari, P, Lysevych, M et al. 2019, 'InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting', ACS Applied Materials and Interfaces, vol. 11, no. 28, pp. 25236-25242.
- Raj, V, Lockrey, M, Liu, R et al. 2019, 'CuI-TiO Composite Thin Film for Flexible Electronic Applications', 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018, IEEE, TBC, pp. 22-23.
- Zhang, X, Huang, H, Yao, X et al. 2019, 'Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire', ACS Nano, vol. 13, no. 3, pp. 3492-3499.
- Tedeschi, D, De Luca, M, Faria Junior, P et al. 2019, 'Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy', Physical Review B, vol. 99, no. 16, pp. 1-7.
- Stutz, E, Friedl, M, Burgess, T et al. 2019, 'Nanosails Showcasing Zn3As2 as an Optoelectronic-Grade Earth Abundant Semiconductor', Physica Status Solidi: Rapid Research Letters, vol. 13, no. 7, pp. 1-5.
- Jevtics, D, Hurtado, A, Guilhabert, B et al. 2019, 'Precise Positioning and Orientation of Nanowire Lasers in Regular and Patterned Surfaces', 18th International Conference on Nanotechnology, NANO 2018, IEEE, TBC, pp. -.
- Gao, H, Sun, W, Sun, Q et al. 2019, 'Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition', Nano Letters, vol. 19, no. 6, pp. 3782-3788.
- Abbasian Shojaei, I, Linser, S, Jnawali, G et al. 2019, 'Strong Hot Carrier Effects in Single Nanowire Heterostructures', Nano Letters, vol. 19, no. 8, pp. 5062-5069.
- Seidl, J, Gluschke, J, Yuan, X et al. 2019, 'Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy', Nano Letters, vol. 19, no. 7, pp. 4666-4677.
- Chugh, D, Jagadish, C & Tan, H 2019, 'Large-Area Hexagonal Boron Nitride for Surface Enhanced Raman Spectroscopy', Advanced Materials Technologies, vol. 4, no. 8, pp. 1-7.
- Zhong, Z, Li, X, Wu, J et al. 2019, 'Wavelength-tunable InAsP quantum dots in InP nanowires', Applied Physics Letters, vol. 115, no. 5, pp. 1-5.
- Chen, X, Chen, Y, Ren, F et al. 2019, 'Band alignment and band bending at a-Ga2O3/ZnO n-n isotype hetero-interface', Applied Physics Letters, vol. 115, no. 20, pp. 1-5.
- Wang, N, Yuan, X, Zhang, X et al. 2019, 'Shape Engineering of InP Nanostructures by Selective Area Epitaxy', ACS Nano, vol. 13, no. 6, pp. 7261-7269.
- Gao, H, Sun, Q, Sun, W et al. 2019, 'Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires', Nano Letters, vol. 19, no. 11, pp. 8262-8269.
- Raj, V, Vora, K, Fu, L et al. 2019, 'High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture', ACS Nano, vol. 13, no. 10, pp. 12015-12023.
- Gao, Q, Li, Z, Li, L et al. 2019, 'Axial p-n junction design and characterization for InP nanowire array solar cells', Progress in Photovoltaics: Research and Applications, vol. 27, no. 3, pp. 237-244.
- Chen, B, Fu, X, Lysevych, M et al. 2019, 'Four-Dimensional Probing of Phase-Reaction Dynamics in Au/GaAs Nanowires', Nano Letters, vol. 19, no. 2, pp. 781-786.
- Raj, V, Fu, L, Tan, H et al. 2019, 'Design Principles for Fabrication of InP-Based Radial Junction Nanowire Solar Cells Using an Electron Selective Contact', IEEE Journal of Photovoltaics, vol. 9, no. 4, pp. 980-991.
- Gao, H, Sun, Q, Lysevych, M et al. 2019, 'Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition', Crystal Growth & Design, vol. 19, no. 9, pp. 5314-5319.
- Yang, I, Li, Z, Wong Leung, Y et al. 2019, 'Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes', Nano Letters, vol. 19, no. 6, pp. 3821-3829.
- Raj, V, Lu, T, Lockrey, M et al. 2019, 'Introduction of TiO2 in CuI for Its Improved Performance as a p-Type Transparent Conductor', ACS Applied Materials and Interfaces, vol. 11, no. 27, pp. 24254-24263.
- Yuan, X, Li, L, Li, Z et al. 2019, 'Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires', Nanoscale, vol. 11, no. 18, pp. 9207-9215.
- Shi, Y, Ren, F, Xu, W et al. 2019, 'Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices', Scientific Reports, vol. 9, no. 0.
- Ma, T, Chen, X, Kuang, Y et al. 2019, 'On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire', Applied Physics Letters, vol. 115, no. 18, pp. 1-5.
- Jagadish, C 2018, 'Semiconductor Nanowires for Optoelectronics Applications', 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018, Conference Organising Committee, TBC.
- Camacho Morales, M, Bautista, G, Zang, X et al. 2018, 'Resonant harmonic generation in AlGaAs nanoantennas using structured light', Nonlinear Photonics, NP 2018, The Optical Society, TBC, pp. -.
- Hurtado, A, Jevtics, D, Guilhabert, B et al. 2018, 'Transfer printing of semiconductor nanowire lasers', I E T Optoelectronics, vol. 12, no. 1, pp. 30-35pp.
- Li, F, Xie, X, Gao, Q et al. 2018, 'Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires', Nanotechnology, vol. 29, no. 22, pp. 1-10pp.
- Butson, J, Narangari, P, Karuturi, S et al. 2018, 'Photoelectrochemical studies of InGaN/GaN MQW photoanodes', Nanotechnology, vol. 29, no. 4, pp. 8pp.
- Parkinson, P, Alanis, J, Peng, K et al. 2018, 'Modal refractive index measurement in nanowire lasers - a correlative approach', Nano Futures, vol. 2, no. 035004.
- Li, Z, Trendafilov, S, Allen, M et al. 2018, 'Room temperature GaAsSb array photodetectors', 1st IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018, Conference Organising Committee, TBC, pp. 143-145pp.
- Peng, K, Parkinson, P, Fu, L et al. 2018, 'Distinguishing cap and core contributions to the photoconductive terahertz response of single GaAs based core–shell–cap nanowire detectors', Lithuanian Journal of Physics, vol. 58, no. 1, pp. 15-23.
- Joyce, H, Uswachoke, C, Baig, S et al. 2018, 'Engineering III-V nanowires for optoelectronics: From epitaxy to terahertz photonics', Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018, ed. D L Huffaker, H Eisele, SPIE, TBC, pp. -.
- Joyce, H, Alexander-Webber, J, Peng, K et al. 2018, 'Engineering semiconductor nanowires for photodetection: From visible to terahertz', Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018, ed. M Razeghi, O Mitrofanov, J L P Vizcaino, C H Tan, SPIE, TBC, pp. -.
- Joyce, H, Eyre, L, Adeyemo, S et al. 2018, 'Probing the photophysics of semiconductor nanomaterials using optical pump-terahertz probe spectroscopy: From nanowires to perovskites', Physical Chemistry of Semiconductor Materials and Interfaces XVII 2018, ed. H A Bronstein, F Deschler, Y Kirchartz, SPIE, TBC, pp. -.
- Raj, V, Lockrey, M, Liu, R et al. 2018, 'CuI-TiO2 Composite Thin Film for Flexible Electronic Applications', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2018), ed. Mariusz Martyniuk, IEEE, TBC, pp. 22-23.
- Sun, Z, Burgess, T, Tan, H et al. 2018, 'Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping', Nanotechnology, vol. 29, no. 16, pp. 13pp.
- Wei, T, Mokkapati, S, Li, T et al 2018, 'Nonlinear Absorption Applications of CH3NH3PbBr3 Perovskite Crystals', Advanced Functional Materials, vol. 28, no. 18, pp. 8pp.
- Xu, W, Ren, F, Jevtics, D et al. 2018, 'Vertically Emitting Indium Phosphide Nanowire Lasers', Nano Letters, vol. 18, no. 6, pp. 3414-3420.
- Yuan, X, Yang, J, He, J et al. 2018, 'Role of surface energy in nanowire growth', Journal of Physics D: Applied Physics, vol. 51, no. 28, pp. 15pp.
- Zhao, B, Lockrey, M, Caroff-Gaonac'h, P et al. 2018, 'The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods', Nanoscale, vol. 10, no. 23, pp. 11205-11210.
- Nie, K, Tu, X, Li, J et al. 2018, 'Tailored Emission Properties of ZnTe/ZnTe:O/ZnO Core-Shell Nanowires Coupled with an Al Plasmonic Bowtie Antenna Array', ACS Nano, vol. 12, no. 7, pp. 7327-7334.
- Li, J, Chen, X, Ma, T et al. 2018, 'Identification and modulation of electronic band structures of single-phase ?-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy', Applied Physics Letters, vol. 113, no. 4, pp. 1-6.
- Li, Z, Yang, I, Li, L et al. 2018, 'Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance', Progress in Natural Science: Materials International, vol. 28, no. 2, pp. 178-182.
- Yu, P, Zhang, F, Li, Z et al. 2018, 'Giant optical pathlength enhancement in plasmonic thin film solar cells using core-shell nanoparticles', Journal of Physics D: Applied Physics, vol. 51, no. 29, pp. 8pp.
- Karuturi, S, Shen, H, Duong, T et al. 2018, 'Perovskite Photovoltaic Integrated CdS/TiO2 Photoanode for Unbiased Photoelectrochemical Hydrogen Generation', ACS Applied Materials and Interfaces, vol. 10, no. 28, pp. 23766-23773pp.
- Li, Z, Tan, H, Jagadish, C et al. 2018, 'III-V Semiconductor Single Nanowire Solar Cells: A Review', Advanced Materials Technologies, vol. 3, no. 9, pp. 12pp.
- Liu, G, Karuturi, S, Chen, H et al. 2018, 'Tuning the morphology and structure of disordered hematite photoanodes for improved water oxidation: A physical and chemical synergistic approach', Nano Energy, vol. 53, pp. 745-752pp.
- Karuturi, S, Yew, R, Narangari, P et al. 2018, 'CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation', Nano Futures, vol. 2, no. 1, pp. 8pp.
- Gao, H, Lysevych, M, Tan, H et al. 2018, 'The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism', Nanotechnology, vol. 29, no. 46, pp. 1-8pp.
- Yang, H, Yang, J, Ren, X et al 2018, 'Three-leaf dart-shaped single-crystal BN formation promoted by surface oxygen', Applied Physics Letters, vol. 113, no. 16, p. 5.
- Raj, V, Santos, T, Rougieux, F et al. 2018, 'Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer', Journal of Physics D: Applied Physics, vol. 51, no. 39, pp. 1-9.
- Chugh, D, Wong Leung, Y, Li, L et al. 2018, 'Flow modulation epitaxy of hexagonal boron nitride', 2D Materials, vol. 5, no. 4, pp. 1-10pp.
- Rahmani, M & Jagadish, C 2018, 'Light-Matter interactions on the nanoscale', Beilstein Journal of Nanotechology, vol. 9, pp. 2125-2127.
- Mohammadi, F, Lysevych, M, Tan, H et al. 2018, 'Hybrid-plasmonic gold coated GaAs nanowire lasers', 2018 Conference on Lasers and Electro-Optics, CLEO 2018, Optical Society of American (OSA), USA, pp. -.
- Yang, I, Zhang, X, Zheng, C et al. 2018, 'Radial Growth Evolution of InGaAs/InP Multi Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy', ACS Nano, vol. 12, no. 10, pp. 10374-10382pp.
- Boland, J, Peng, K, Baig, S et al. 2018, 'The Route to Nanoscale Terahertz Technology: Nanowire-based Terahertz Detectors and Terahertz Modulators', 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018), IEEE Computer Society, United States, pp. 2pp.
- Ghediya, P, Chaudhuri, T, Raj, V et al. 2018, 'Direct-coated Cu2SnS3 films from molecular solution inks for solar photovoltaics', Materials Science in Semiconductor Processing, vol. 88, pp. 120-126.
- Wan, Y, Karuturi, S, Samundsett, C et al 2018, 'Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction', ACS Energy Letters, vol. 3, no. 1, pp. 125-131pp.
- Kruk, S, Camacho Morales, M, Xu, L et al. 2017, 'Nonlinear Optical Magnetism revealed by Second-Harmonic Generation in Nanoantennas', Nano Letters, vol. 17, no. 6, pp. 3914-3918pp.
- Gareso, P, Tan, H & Jagadish, C 2017, 'Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs quantum well laser structures', ECS Journal of Solid State Science and Technology, vol. 6, no. 8, pp. 122-126.
- Baig, S, Boland, J, Damry, D et al. 2017, 'Choice of polymer matrix for a fast switchable III-V nanowire terahertz modulator', MRS Advances, vol. 2, no. 28, pp. 1475-1480.
- Alexander-Webber, J, Groschner, C, Sagade, A et al. 2017, 'Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering', 2017 Conference on Lasers and Electro-Optics (CLEO), Optical Society of American (OSA), USA, pp. 2pp.
- Qu, J, Du, S, Burgess, T et al. 2017, '3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition', Advanced Materials, vol. 29, no. 31, pp. 1-8pp.
- Qu, J, Du, S, Burgess, T et al. 2017, '3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition', Advanced Materials, vol. 29, no. 31, pp. 1-8pp.
- Rota, M, Ameruddin, A, Wong Leung, Y et al. 2017, 'Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires', Journal of Physical Chemistry C, vol. 121, no. 30, pp. 16650-16656.
- Alanis, J, Saxena, D, Mokkapati, S et al. 2017, 'Large-scale statistics for threshold optimization of optically pumped nanowire lasers', Nano Letters, vol. 17, no. 8, pp. 4860-4865.
- Nie, K, Li, J, Chen, X et al. 2017, 'Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas', Scientific Reports, vol. 7, no. 1, pp. 7503-7503.
- Fonseka, H, Ameruddin, A, Caroff-Gaonac'h, P et al. 2017, 'InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 µm wavelength range', Nanoscale, vol. 9, no. 36, pp. 13554-13562.
- Jevtics, D, Hurtado, A, Guilhabert, B et al. 2017, 'Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate', Nano Letters, vol. 17, no. 10, pp. 5990-5994.
- Ullah, A, Joyce, H, Tan, H et al. 2017, 'The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors', Nanotechnology, vol. 28, no. 45, pp. 454001 (8pp).
- Alexander-Webber, J, Groschner, C, Sagade, A et al. 2017, 'Engineering the Photoresponse of InAs Nanowires', ACS Applied Materials and Interfaces, vol. 9, no. 50, pp. 43993-44000pp.
- Yuan, X, Guo, Y, Caroff-Gaonac'h, P et al. 2017, 'Dopant-Free Twinning Superlattice Formation in InSb and InP Nanowires', Physica Status Solidi: Rapid Research Letters, vol. 11, no. 11, pp. 6pp.
- Chen, B, Fu, X, Tang, J et al. 2017, 'Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy', PNAS - Proceedings of the National Academy of Sciences of the United States of America, vol. 114, no. 49, pp. 12876-12881pp.
- Rahmani, M, Kruk, S, Camacho Morales, M et al. 2017, 'Giant enhancement and control of second-harmonic radiation from algaas nanoantennas', 2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017, IEEE, TBC, pp. 1-3.
- Joyce, H, Baig, S, Wong Leung, Y et al. 2017, 'Semiconductor nanowires in terahertz photonics: From spectroscopy to ultrafast nanowire-based devices', 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017, IEEE, TBC, pp. 1-2.
- Berg, A, Caroff-Gaonac'h, P, Shahid, N et al. 2017, 'Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy', Nano Research, vol. 10, no. 2, pp. 672-682.
- Carrad, D, Mostert, A, Ullah, A et al. 2017, 'Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry', Nano Letters, vol. 17, no. 2, pp. 827-833.
- Peng, K, Parkinson, P, Gao, Q et al. 2017, 'Single n+-i-n+ InP Nanowires for Highly Sensitive Terahertz Detection', Nanotechnology, vol. 28, no. 12, pp. (9 pages).
- Baig, S, Boland, J, Damry, D et al. 2017, 'An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires', Nano Letters, vol. 17, no. 4, pp. 2603-2610pp.
- Narangari, P, Karuturi, S, Lysevych, M et al. 2017, 'Improved photoelectrochemical performance of GaN nanopillar photoanodes', Nanotechnology, vol. 28, no. 15, pp. -.
- Li, F, Li, Z, Tan, L et al. 2017, 'Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors', Nanotechnology, vol. 28, no. 12, pp. 9pp.
- Yuan, X, Saxena, D, Caroff-Gaonac'h, P et al. 2017, 'Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires', Journal of Physical Chemistry C, vol. 121, no. 15, pp. 8636-8644.
- Peng, K, Parkinson, P, Gao, Q et al. 2017, 'Broadband single-nanowire photoconductive terahertz detectors', CLEO: Science and Innovations, CLEO_SI 2017, Optical Society of American (OSA), Online, pp. 2pp.
- Baig, S, Boland, J, Damry, D et al. 2017, 'Modulation of terahertz polarization on picosecond timescales using polymer-encapsulated semiconductor nanowires', CLEO: Science and Innovations, CLEO_SI 2017, Optical Society of American (OSA), Online, pp. 2pp.
- Gao, Q, Tan, H, Jagadish, C et al. 2017, 'Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires', Physical Review B, vol. 95, no. 4, pp. -.
- Gareso, P, Buda, M, Tan, H et al. 2017, 'The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes', Indian Journal of Pure & Applied Physics, vol. 55, no. 5, pp. 333-338pp.
- Joyce, H, Baig, S, Parkinson, P et al. 2017, 'The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires', Journal of Physics D: Applied Physics, vol. 50, no. 22, pp. -.
- Kruk, S, Xu, L, Camacho Morales, M et al. 2017, 'Magnetic vs electric second-harmonic generation from ALGaAs nanoantennas', QELS_Fundamental Science, CLEO_QELS 2017, Optical Society of American (OSA), Online, pp. 2pp.
- Yew, R, Karuturi, S, Tan, H et al. 2017, 'Nanostructured Photoelectrodes via Template-Assisted Fabrication', Semiconductors and Semimetals, vol. 97, pp. 289-313.
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- Kucheyev, S, Jagadish, C, Williams, J et al. 2003, 'Implant Isolation of ZnO', Journal of Applied Physics, vol. 93, no. 5, pp. 2972-2976.
- Deenapanray, P, Coleman, V & Jagadish, C 2003, 'Electrical Characterization of Impurity-free Disordered p-type GaAs', Electrochemical and Solid-State Letters, vol. 6, no. 3, pp. G37-G40.
- Wang, Y, Zou, J, Kucheyev, S et al. 2003, 'Nature of Planar Defects in Ion-implanted GaN', Electrochemical and Solid-State Letters, vol. 6, no. 3, pp. G34-G36.
- Leveque, P, Hallen, A, Svensson, B et al. 2003, 'Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon', European Physical Journal - Applied Physics, vol. 23, pp. 5-9.
- Fu, L, McGowan, P, Tan, H et al. 2003, 'Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide', Applied Physics Letters, vol. 82, no. 16, pp. 2613-2615.
- Deenapanray, P, Svensson, B, Tan, H et al. 2003, 'A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers', Japanese Journal of Applied Physics, vol. 42, no. 3, pp. 1158-1163.
- Boudinov, H, Coelho, A, Tan, H et al. 2003, 'Characterization of Deep Level Traps Responsible for Isolation of Proton Implanted GaAs', Journal of Applied Physics, vol. 93, no. 6, pp. 3234-3238.
- Deenapanray, P, Tan, H & Jagadish, C 2003, 'Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers', Applied Physics A: Materials Science and Processing, vol. 76, pp. 961-964.
- Deenapanray, P, Meyer, W, Auret, F et al 2003, 'Electron emission properties of a defect at ~(Ec�0.23eV) in impurity-free disorded n-GaAs', Physica B, vol. 340-342, pp. 315-319.
- Carmody, C, Tan, H & Jagadish, C 2003, 'Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells', Journal of Applied Physics, vol. 93, no. 8, pp. 4468-4470.
- Deenapanray, P, Gao, Q & Jagadish, C 2003, 'Implant Isolation of Zn-doped GaAs Epilayers: Effects of Ion Species, Doping Concentration, and Implantation Temperature', Journal of Applied Physics, vol. 93, no. 11, pp. 9123-9129.
- Doshi, S, Deenapanray, P, Tan, H et al. 2003, 'Towards a Better Understanding of the Operative Mechanisms Underlying Impurity-free Disordering of GaAs: Effect of Stress', Journal of Vacuum Science and Technology B, vol. 21, no. 1, pp. 198-203.
- Linnarsson, M, Zimmermann, U, Wong Leung, Y et al. 2003, 'Solubility Limits of Dopants in 4H-SiC', Applied Surface Science, vol. 203-204, pp. 427-432.
- McGowan, P, Tan, H, Jagadish, C et al. 2003, 'Proton-Irradiation-Induced Intermixing in InGaAs Quantum Dots', Applied Physics Letters, vol. 82, pp. 2053-2055.
- Kim, S, Han, I, Chung, S et al 2003, 'Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures', Journal of Materials Science Letters, vol. 22, pp. 467-469.
- Fu, L, Heijden, R, Tan, H et al. 2002, 'Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers', Applied Physics Letters, vol. 80, no. 7, pp. 1171-1173.
- Kucheyev, S, Toth, M, Phillips, M et al. 2002, 'Chemical Origin of the Yellow Luminescence in GaN', Journal of Applied Physics, vol. 91, no. 9, pp. 5857-5874.
- Kucheyev, S, Williams, J, Zou, J et al. 2002, 'Structural Disorder in Ion-implanted AlxGa1-xN', Applied Physics Letters, vol. 80, no. 5, pp. 787-789.
- Kucheyev, S, Williams, J, Zou, J et al. 2002, 'Ion-beam-produced Damage and its Stability in AIN Films', Journal of Applied Physics, vol. 92, no. 7, pp. 3554-3558.
- Fu, L, Wong Leung, Y, Deenapanray, P et al. 2002, 'Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide', Journal of Applied Physics, vol. 92, no. 7, pp. 3579-3583.
- Deenapanray, P, Gong, B, Lamb, R et al. 2002, 'Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers', Applied Physics Letters, vol. 80, no. 23, pp. 4351-4353.
- Pellegrino, P, Leveque, P, Kortegaard-Nielsen, H et al. 2002, 'Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 186, pp. 334-338.
- Monakhov, E, Wong Leung, Y, Kuznetsov, A et al. 2002, 'Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation', Physical Review B, vol. 65, pp. 245201-1-9.
- Lippen, T, Boudinov, H, Tan, H et al. 2002, 'Electrical Isolation of AlxGa1-xAs by Ion Irradiation', Applied Physics Letters, vol. 80, pp. 264-266.
- Deenapanray, P, Martin, A, Doshi, S et al. 2002, 'Atomic Relocation Processes in Impurity-Free Disordered p-GaAs Epilayers Studied by Deep Level Transient Spectroscopy', Applied Physics Letters, vol. 81, no. 19, pp. 3573-3575.
- Deenapanray, P, Martin, A, McGowan, P et al. 2002, 'On the Pulsed Anodic Oxidation of n+-InP', Electrochemical and Solid-State Letters, vol. 5, no. 6, pp. G41-G44.
- Sun, B, Gal, M, Gao, Q et al. 2002, 'On the Nature of Radiative Recombination in GaAsN', Applied Physics Letters, vol. 81, no. 23, pp. 4368-4370.
- Gal, M, Dao, L, Kraft, E et al. 2002, 'Thermally Stimulated Luminescence in Ion-Implanted GaAs', Journal of Luminescence, vol. 96, pp. 287-293.
- Lederer, M, Hildebrandt, M, Kolev, V et al. 2002, 'Passive Mode Locking of a Self-frequency-doubling Yb:Yal3 (BO3)4 Laser', Optics Letters, vol. 27, no. 6, pp. 436-438.
- Buda, M, Fu, L, Hay, J et al. 2002, 'Impurity Free Intermixing for Optoelectronic Device Integration', Integrated Optoelectronics, ed. M J Deen, D Misra, J Ruzyllo, Electrochemical Society Inc, Pennington, NJ, pp. 89-105.
- Carmody, C, Boudinov, H, Tan, H et al. 2002, 'Ultrafast Trapping Times in Ion Implanted InP', Journal of Applied Physics, vol. 92, no. 5, pp. 2420-2423.
- Ip, K, Overberg, M, Heo, Y et al. 2002, 'Thermal Stability of Ion-implanted Hydrogen in ZnO', Applied Physics Letters, vol. 81, no. 21, pp. 3996-3998.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2002, 'Blistering of H-implanted GaN', Journal of Applied Physics, vol. 91, no. 6, pp. 3928-3930.
- Kucheyev, S, Boudinov, H, Williams, J et al. 2002, 'Effect of Irradiation Temperature and Ion Flux on Electrical Isolation of GaN', Journal of Applied Physics, vol. 91, no. 7, pp. 4117-4120.
- Kucheyev, S, Bradby, J, Williams, J et al. 2002, 'Mechanical Deformation of Single-crystal ZnO', Applied Physics Letters, vol. 80, no. 6, pp. 956-958.
- Kucheyev, S, Williams, J, Zou, J et al. 2002, 'Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature', Nuclear Instruments and Methods in Physics Research: Section B, vol. 190, pp. 782-786.
- Bradby, J, Kucheyev, S, Williams, J et al. 2002, 'Contact-induced Defect Propagation in ZnO', Applied Physics Letters, vol. 80, no. 24, pp. 4537-4539.
- Kucheyev, S, Deenapanray, P, Jagadish, C et al. 2002, 'Electrical Isolation of ZnO by Ion Bombardment', Applied Physics Letters, vol. 81, no. 18, pp. 3350-3352.
- Kucheyev, S, Toth, M, Phillips, M et al. 2002, 'X-ray Spectrometry Investigation of Electrical Isolation in GaN', Journal of Applied Physics, vol. 91, no. 6, pp. 3940-3942.
- Vyvenko, O, Sachdeva, R, Istratov, A et al 2002, 'Study of Diffusivity and Electrical Properties of Zr and Hf in Silicon', Semiconductor Silicon 2002, ed. H R Huff, L Fabry, S Kishino, Electrochemical Society Inc, Pennington NJ, pp. 440-451.
- Pellegrino, P, Leveque, P, Lalita, J et al 2001, 'Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon', Physical Review B, vol. 64, pp. 195211/1-10.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'Ion Beam Damage Processes in GaN', III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV), ed. Ren, F.; Buckley, D.N.; Chu, S.N.G.; Pearton, S.J., Electrochemical Society Inc, Pennington, USA, pp. 150-160.
- Kucheyev, S, Bradby, J, Williams, J et al. 2001, 'Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films', Materials Research Society Meeting Fall 2000, ed. Moss, S; Heinig, K.-H; Poker, D.B, Materials Research Society, Warrendale, USA, pp. Q5.5.1-Q5.5.6.
- Giniunas, L, Danielius, R, Tan, H et al. 2001, 'Electron and trap dynamics in As-ion-implanted and annealed GaAs', Applied Physics Letters, vol. 78, no. 12, pp. 1667-1669.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN', Nuclear Instruments and Methods in Physics Research: Section B, vol. 178, pp. 209-213.
- Lu, W, Liu, Q, Li, Z et al. 2001, 'Carrier transfer between V-grooved quantum wire and vertical quantum well', Physics Letters A, vol. 280, pp. 77-80.
- Pellegrino, P, Leveque, P, Wong Leung, Y et al. 2001, 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation', Applied Physics Letters, vol. 78, no. 22, pp. 3442-3444.
- Deenapanray, P, Lay, M, Aberg, D et al. 2001, 'Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition', Physica B, vol. 308-310, pp. 776-779.
- Wong Leung, Y, Jagadish, C, Conway, M et al. 2001, 'Effect of implant temperature on secondary defects created by MeV Sn implantation is silicon', Journal of Applied Physics, vol. 89, pp. 2556-2559.
- Fu, L, Tan, H, Jagadish, C et al. 2001, 'Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation', Applied Physics Letters, vol. 78, no. 1, pp. 10-12.
- Boudinov, H, Kucheyev, S, Williams, J et al. 2001, 'Electrical isolation of GaN by MeV ion irradiation', Applied Physics Letters, vol. 78, no. 7, pp. 943-945.
- Deenapanray, P, Martin, A & Jagadish, C 2001, 'Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers', Applied Physics Letters, vol. 79, no. 16, pp. 2561-2563.
- Kucheyev, S, Bradby, J, Williams, J et al. 2001, 'Deformation Behavior of Ion-Beam-Modified GaN', Applied Physics Letters, vol. 78, no. 2, pp. 156-158.
- Kucheyev, S, Toth, M, Phillips, M et al. 2001, 'Cathodoluminescence Depth Profiling of Ion-Implanted GaN', Applied Physics Letters, vol. 78, no. 1, pp. 34-36.
- Kucheyev, S, Williams, J, Titov, A et al. 2001, 'Effect of the density of collision cascades on implantation damage in GaN', Applied Physics Letters, vol. 78, no. 18, pp. 2694-2696.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2001, 'Effect of ion species on the accumulation of ion-beam damage in GaN', Physical Review B, vol. 64, pp. 035202/1-10.
- Kucheyev, S, Toth, M, Phillips, M et al. 2001, 'Effects of excitation density on cathodoluminescence from GaN', Applied Physics Letters, vol. 79, no. 14, pp. 2154-2156.
- Cohen, M, Allerman, A, Choquette, K et al 2001, 'Electrically Steerable Lasers using Wide-Aperture VCSELs', IEEE Photonics Technology Letters, vol. 13, no. 6, pp. 544-546.
- Fu, Y, Willander, M, Liu, Q et al. 2001, 'Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire', Journal of Applied Physics, vol. 89, no. 4, pp. 2351-2356.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures', Applied Physics Letters, vol. 78, no. 10, pp. 1373-1375.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'High-dose ion implantation into GaN', Nuclear Instruments and Methods in Physics Research: Section B, vol. 175-177, pp. 214-218.
- Li, N, Fu, L, Li, N et al. 2001, 'The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors', Journal of Crystal Growth, vol. 222, pp. 786-790.
- Liu, Q, Sasaki, A, Ohno, N et al. 2001, 'Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure', Journal of Applied Physics, vol. 90, no. 10, pp. 5438-5440.
- Deenapanray, P & Jagadish, C 2001, 'Effect of Stress on Impurity-free quantum well intermixing', Electrochemical and Solid-State Letters, vol. 4, pp. G11-G13.
- Boudinov, H, de Souza, J & Jagadish, C 2001, 'Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability', Nuclear Instruments and Methods in Physics Research: Section B, vol. 175-177, pp. 235-240.
- Boudinov, H, Tan, H & Jagadish, C 2001, 'Electrical isolation of n-type and p-type InP layers by proton bombardment', Journal of Applied Physics, vol. 89, no. 10, pp. 5343-5347.
- Deenapanray, P & Jagadish, C 2001, 'Impurity free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate', Journal of Vacuum Science and Technology B, vol. 19, no. 5, pp. 1962-1966.
- Dao, L, Gal, M, Fu, L et al. 2001, 'Possibility of improved frequency response from intermixed quantum-well devices', Superlattices and Microstructures, vol. 29, no. 2, pp. 105-110.
- Fu, L, Tan, H, Jagadish, C et al. 2001, 'Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing', Infrared Physics and Technology, vol. 42, pp. 171-175.
- Gal, M, Wengler, M, Ilyas, S et al. 2001, 'Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler', Nuclear Instruments and Methods in Physics Research: Section B, vol. 173, pp. 528-532.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'Ion-beam-induced reconstruction of amorphous GaN', Physical Review B, vol. 63, pp. 113202-1-4.
- Svensson, B, Hallen, A, Linnarsson, M et al 2001, 'Doping of Silicon Carbide by Ion Implantation', Materials Science Forum, vol. 353-356, pp. 549-554.
- Kuznetsov, A, Janson, M, Hallen, A et al 2001, 'Channeling Measurements of Ion Implantation Damage in 4H-SiC', Materials Science Forum, vol. 353-356, pp. 595-598.
- Liu, X, Lu, W, Shen, S et al. 2001, 'Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures', Nanotechnology, vol. 1, pp. 389-392.
- Lederer, M, Kolev, V, Luther-Davies, B et al. 2001, 'Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking', Journal of Physics D: Applied Physics, vol. 34, no. 16, pp. 2455-2464.
- Toth, M, Phillips, M, Kucheyev, S et al. 2000, 'Charge Contrast in SE Images Obtained Using the ESEM', Institute of Physics Conference No 165 (2000), American Institute of Aeronautics and Astronautics, unknown, pp. 275-276.
- Schmidt, D, Svensson, B, Seibt, M et al 2000, 'Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon', Journal of Applied Physics, vol. 88, pp. 2309-2317.
- Kuball, M, Hayes, J, Suski, T et al. 2000, 'High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering', Journal of Applied Physics, vol. 87, pp. 2736-2741.
- Kucheyev, S, Williams, J, Zou, J et al. 2000, 'Ion beam induced dissociation and bubble formation in GaN', Applied Physics Letters, vol. 77, pp. 3577-3579.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2000, 'Ion-Beam-Induced Porosity of GaN', Applied Physics Letters, vol. 77, pp. 1455-1457.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2000, 'Damage Buildup in GaN under Ion Bombardment', Physical Review B, vol. 62, pp. 7510-7522.
- Liu, Q, Li, N, Lu, W et al. 2000, 'Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing', Japanese Journal of Applied Physics, vol. 39, pp. 1687-1689.
- Hegeler, F, Manasreh, M, Morath, C et al. 2000, 'Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells', Applied Physics Letters, vol. 77, pp. 2867-2869.
- Fu, L, Deenapanray, P, Tan, H et al. 2000, 'Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing', Applied Physics Letters, vol. 76, pp. 837-839.
- Fu, Y, Willander, M, Lu, W et al 2000, 'Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire', Physical Review B, vol. 61, pp. 8306-8311.
- Deenapanray, P, Tan, H & Jagadish, C 2000, 'Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells', Materials Research Society Symposium Proceedings, vol. 607, pp. 491-502.
- Deenapanray, P, Tan, H, Jagadish, C et al. 2000, 'Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers', Journal of Applied Physics, vol. 88, pp. 5255-5261.
- Deenapanray, P, Tan, H, Jagadish, C et al. 2000, 'Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition', Applied Physics Letters, vol. 77, pp. 696-698.
- Deenapanray, P, Fu, L, Petravic, M et al 2000, 'Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells', Surface and Interface Analysis, vol. 29, pp. 754-760.
- Deenapanray, P, Tan, H, Cohen, M et al. 2000, 'Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells', Journal of the Electrochemical Society, vol. 147, pp. 1950-1956.
- Deenapanray, P, Tan, H, Fu, L et al. 2000, 'Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing', Electrochemical and Solid-State Letters, vol. 3, pp. 196-199.
- Babinski, M, Siwiec-Matuszyk, J, Baranowski, J et al. 2000, 'Transport and quantum electron mobility in the modulation Si d-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy', Applied Physics Letters, vol. 77, pp. 999-1001.
- Toth, M, Kucheyev, S, Williams, J et al. 2000, 'Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy', Applied Physics Letters, vol. 77, pp. 1342-1344.
- Dao, L, Gal, M, Li, G et al. 2000, 'Photoluminescence in delta-doped InGaAs/GaAs single quantum wells', Journal of Applied Physics, vol. 87, pp. 3896-3899.
- Gingrich, H, Morath, C, Manasreh, M et al 2000, 'Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/A10.3Ga0.7As Multiple Quantum Wells', Materials Research Society Symposium Proceedings, vol. 607, pp. 217-222.
- Dao, L, Gal, M, Carmody, C et al. 2000, 'A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells', Journal of Applied Physics, vol. 88, pp. 5252-5254.
- Liu, Q, Li, N, Li, Z et al. 2000, 'Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared', Japanese Journal of Applied Physics, vol. 39, pp. 5124-5127.
- Liu, Q, Li, Z, Chen, X et al. 2000, 'Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures', Physics Letters A, vol. 271, pp. 213-216.
- Liu, Q, Lu, W, Chen, X et al. 2000, 'Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing', Journal of Applied Physics, vol. 87, pp. 1566-1568.
- Kucheyev, S, Bradby, J, Williams, J et al. 2000, 'Nanoindentation of Epitaxial GaN Films', Applied Physics Letters, vol. 77, pp. 3373-3375.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2000, 'Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment', Journal of Applied Physics, vol. 88, pp. 5493-5495.
- Marcinkevicius, S, Jagadish, C, Tan, H et al. 2000, 'Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers', Applied Physics Letters, vol. 76, pp. 1306-1308.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2000, 'Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN', Applied Physics Letters, vol. 76, pp. 3899-3901.
- Wong Leung, Y, Fatima, S, Jagadish, C et al. 2000, 'Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon', Journal of Applied Physics, vol. 88, pp. 1312-1318.
- Wong Leung, Y, Fatima, S, Jagadish, C et al. 2000, 'Effect of implant temperature on extended defects created by ion implantation in silicon', Defects and Diffusion Forum Part A: Defect and Diffusion Forum, vol. 183, no. 1, pp. 163-169.
- Zhao, Q, Willander, M, Lu, W et al. 2000, 'Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires', Journal of Applied Physics, vol. 88, pp. 2519-2522.
- Liu, Q, Lu, W, Li, Z et al. 1999, 'Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing', Applied Physics Letters, vol. 75, pp. 3339-3341.
- Tan, H, Jagadish, C, Lederer, M et al. 1999, 'Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers', Applied Physics Letters, vol. 75, no. 10, pp. 1437-1439.
- Lederer, M, Luther-Davies, B, Tan, H et al. 1999, 'Multipulse Operation of a Ti:sapphire Laser Mode locked by an Ion-Implanted Semiconductor Saturable-Absorber Mirror', Journal of the Optical Society of America B, vol. 16, no. 6, pp. 895-904.
- Lederer, M, Luther-Davies, B, Tan, H et al. 1999, 'Nonlinear Optical Absorption and Temporal Response of Arsenic-and Oxygen-Implantated GaAs', Applied Physics Letters, vol. 74, no. 14, pp. 1993-1995.
- Manasreh, M, Ballet, P, Smathers, J et al 1999, 'Proton irradiation effects on the inter sub-band transitions in GaAs/AlGaAs multiple quantum wells with bulk and superlattice barriers', Applied Physics Letters, vol. 75, pp. 525-527.
- Zhao, Q, Willander, M, Holtz, P et al. 1999, 'Radiative recombination in p-type delta doped layers in GaAs', Physical Review B, vol. 60, pp. R2193-R2196.
- Cohen, M, Tan, H & Jagadish, C 1999, 'Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators', Journal of Applied Physics, vol. 85, pp. 7964-7966.
- Johnston, M, Gal, M, Chen, Z et al. 1999, 'Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays', Applied Physics Letters, vol. 75, pp. 923-925.
- Karouta, F, Tan, H, Jagadish, C et al. 1999, 'Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers', Electronics Letters, vol. 35, pp. 815-817.
- Fu, L, Tan, H, Johnston, M et al. 1999, 'Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers', Journal of Applied Physics, vol. 85, pp. 6786-6789.
- Fu, Y, Willander, M, Liu, Q et al. 1999, 'Energy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire', Superlattices and Microstructures, vol. 26, no. 5, pp. 307-315.
- Fatima, S, Jagadish, C, Lalita, J et al 1999, 'Hydrogen Interaction with Implantation Induced Point Defects in p-type Silicon', Journal of Applied Physics, vol. 85, no. 5, pp. 2562-2567.
- Iordache, G, Buda, M, Acket, G et al. 1999, 'Continuous wave operation of low confinement asymmetric structure diode lasers', Electronics Letters, vol. 35, pp. 148-149.
- Liu, Q, Chen, X, Lu, W et al. 1999, 'Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by thermal interdiffusion', Japanese Journal of Applied Physics, vol. 38, pp. 5044-5045.
- Fatima, S, Wong Leung, Y, Fitzgerald, J et al. 1999, 'Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si', Applied Physics Letters, vol. 74, pp. 1141-1143.
Projects and Grants
Grants information is drawn from ARIES. To add or update Projects or Grants information please contact your College Research Office.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (Secondary Investigator)
- High-brightness wavelength tuneable lasers for quantum science (Secondary Investigator)
