1.Process integration for SiC Power Device in RD PIE team.
2.Develop SiC Power Device for SiC-JBS SiC-MPS and Pilot Run in Fab.
3.Develop SiC-JBS and SiC-MPS process flow.
4.Develop SiC-MOSFET process flow.
5.Measure Electrical characteristic:
(1) SBD WAT/CP (including n-value and Schottky Barrier Height
extraction).
(2) MOSFET WAT/CP (including Gate Oxide Dit extraction).
6.Use KLayout software to view device layout.
7.Use Silvaco TCAD to build process and device simulation.
Diodes (達爾科技) (2011 ~ 2018 ; Senior manager)
# NPI/production (CP/FT/BI/BE) management (Manage three engineers).
Taiwan (GTK/ASE/KY/TPW/GT/GIGA/OSE); Overseas (UTAC/SMIC).
Built up test program control system, hold lot disposition and release system.
# Production (NPI) process/data review and improvement. Hardware technology evaluation and issue handling.
# Test program development, platform(phaseout) migration and assessment.
Succeeded on product migration 7 times(PTI/SPIL/GT/GIGA/KYEC/OSE).
# Throughput capacity problem coordination and handling. Hardware and equipment quantity evaluation(order) and scheduling(hardware/tester/issue).
# Test performance/capacity/yield/process variation review and enhancement.