Pei-Wen Li's Homepage

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�P ��P�I��ض��б«��ɺӤh�Z��ʯE�P�ǥH�uDesigner Ge QDs on Si for Enhanced Near Infrared Photodetection�v�a��2012�~ IEDMS-Best Poster Award

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�P ��P�I��ض��б«��ɳդh�Z��a��P�ǥH�uEnhanced gate modulation of Ge QD transistors with self-aligned electrodes�v�a��2011�~ IEDMS-Best student paper award

�P ��P�I��ض��б«��ɺӤh�Z��y�_�P�ǥH�uFormation of thin-film-like Ge quantum dots array in thermally oxidizing SiGe pillar technique for energy harvest/conversion applications�v�a��2010�~ IEDMS-Best student paper award

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�P ��§ʦP�Ǻa��`�̰�a��ޭp�e�줽�ǸɧU�ѻP�u2010 International Winter School: Beyond Moore��s Law 2�v

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�P ��P�I��ض��б«��ɳդh�Z��Ӷ��H�uHigh density and uniform ALD TiN nanocrystal flash memory devices with large memory window and good retention�v�a��x�W�q�l��ƻP��|��ǥX�פ��

�P ��P�I��ض��б«��ɳդh�Z��Ӷ��B��§ʥH�uOptical and Electrical Characteristics of Ge Quantum Dots Formed by Selective Qxidation of Si_0.85Ge_0.15 and the Related Interdigited Photodiode�v�a��x�W�q�l��ƻP��|��ǥX�פ��

�P ��§ʦP�ǩ�E�Q��~�װѻPSSDM��Q�|��oMarubun Traveling Grant ��Ӥ� 1 2 3

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