Embracing Si, SiC and GaN for Powering the Future of E-Mobility - Power Electronics News

Embracing Si, SiC and GaN for Powering the Future of E-Mobility

This presentation explores Si, SiC, and GaN semiconductor use in eMobility, optimizing powertrains for efficiency and sustainability

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Embracing Si, SiC, and GaN for Powering the Future of eMobility

In this session, we will discuss innovative power conversion applications like the traction inverter and OBC to optimize efficiency, cost and sustainability in electric vehicles. We will explore the creative use of different semiconductor materials, such as silicon, silicon carbide and gallium nitride, to meet the target requirements. The concept of “fusion technology,” combining Si and SiC power switches, is introduced to balance performance and cost. The optimal utilization of different semiconductor technologies enables efficient, sustainable and electrifying EV powertrains. For fusion technology designs, Infineon’s system expertise and broad product portfolio make it a strong partner for the development of advanced power conversion applications, determining the optimal semiconductor selection tailored to the application requirements.

Presented by Dirk Geiger, senior director of application marketing and management for vehicle motion, electric driver train and power conversion, and Christoph Bauer, global system architect for automotive traction inverters, both at Infineon Technologies

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