The is a high speed, low power CMOS static RAM organized � 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.

High speed access time: 10/12/15/20 nS (max.) Low power consumption: - Active: 400 mW (typ.) Single +5V power supply Fully static operation

All inputs and outputs directly TTL compatible Three-state outputs Available packages: 28-pin 300 mil SOJ, 330 mil SOP, skinny DIP and standard type one TSOP � 13.4 mm)

DESCRIPTION Address Inputs Data Inputs/Outputs Chip Select Input Write Enable Input Output Enable Input Power Supply Ground

PARAMETER Supply Voltage to VSS Potential Input/Output to VSS Potential Allowable Power Dissipation Storage Temperature Operating Temperature RATING -0.5 to VDD to +70 UNIT W �C

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.

OE WE MODE Not Selected Output Disable Read Write I/O1-I/O8 High Z High Z Data Out Data In VDD CURRENT ISB, ISB1 IDD

PARAMETER Input Low Voltage Input High Voltage Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Operating Power Supply Current

TEST CONDITIONS VIN = VSS to VDD VI/O = VSS to VDD, CS = VIH OE = VIH WE = VIL IOL +8.0 mA IOH CS = VIL, I/O 0 mA Cycle = MIN Duty

PARAMETER Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance SYM. CONDITIONS 25� C MAX. 20 60 UNIT �C/W

PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load = 30 pF, IOH/IOL mA/8 mA CONDITIONS