UT52L0464MC-7.5E : Org. = 4x4x4 Bits (64M) ;; Speeds (ns) = 6/7/7.5/8 ;; VCC = 3.0~3.6V ;; Package Type = 54TSOP-II

UT621024LC-70LE : Low Speed & Low Power

UT62256CSC-70LE : Low Speed & Low Power

UT62257CLSL-35L : Low Speed & Low Power Org. = 32Kx8 With CE2 ;; Temp. ( J) = 0~70 ;; Voltage = 5V ;; Speed (ns) = 35/70 ;; Icc(Max) (mA) = 50/40 ;; Isb1(Max) (uA) = 100/40 ;; Package = 28PDIP, 28SOP, 28STSOP

UT62L1024SC-55LL : Low Speed & Low Power

UT62L2568BS-70LLE : Low Speed & Low Power Org. = 256Kx8 ;; Temp. ( J) = 0~70 ;; Voltage = 2.5~3.6V ;; Speed (ns) = 55/70/100 ;; Icc(Max) (mA) = 35/30/25 ;; Isb1(Max) (uA) = 80/20 ;; Package = 32TSOP-I, 32STSOP, 36TFBGA, Die

UT62L5128BS-55LI : Low Speed & Low Power

UT62L6416BSL-55LL : Low Speed & Low Power Org. = 64Kx16 ;; Temp. ( J) = 0~70 ;; Voltage = 2.7~3.6V ;; Speed (ns) = 55/70 ;; Icc(Max) (mA) = 35/25 ;; Isb1(Max) (uA) = 10 ;; Package = 44TSOP-II, 48TFBGA,DIE

UT62L6416MC-70LE : Low Speed & Low Power Org. = 64Kx16 ;; Temp. ( J) = 0~70 ;; Voltage = 2.7~3.6V ;; Speed (ns) = 55/70 ;; Icc(Max) (mA) = 35/25 ;; Isb1(Max) (uA) = 10 ;; Package = 44TSOP-II, 48TFBGA,DIE

UT62W1024SCL-35LL : Low Speed & Low Power

UT62W64CPCL-35LLE : Low Speed & Low Power

BS62LV1025 : SRAM. Vcc operation voltage ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current High speed access time -55 55ns (Max.) at Vcc -70 70ns (Max.) at Vcc = 5.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static.

CY7C056V-12AC : Multi-Port RAM. 16K X 36 Dual-port Static RAM. True dual-ported memory cells which allow simultaneous access of the same memory location x 36 organization x 36 organization (CY7C057V) 0.25-micron CMOS for optimum speed/power High-speed access: 12/15/20 ns Low operating power Active: ICC 250 mA (typical) Standby: 10 �A (typical) Fully asynchronous operation Automatic power-down Expandable data bus to 72 bits.

K7N801845M : NtRAM(FT & PP). = K7N801845M 512Kx18 Pipelined NtRAM™ ;; Organization = 512Kx18 ;; Operating Mode = SPB ;; VDD(V) = 2.5 ;; Access Time-tCD(ns) = 3.5,3.8,4.2,5.0 ;; Speed-tcyc (MHz) = 167,150,133,100 ;; I/o Voltage(V) = 2.5 ;; Package = 100TQFP ;; Production Status = Eol ;; Comments = -.

KT6472SRN0R : ->DIMM. This memory module is a high performance 512 Megabyte Registered synchronous dynamic RAM module organized a 168 pin Dual In-Line Memory Module (DIMM) package. The module utilizes thirty-six (36) 8Mx4X4 SDRAM devices in a TSOP II 400 mil package. A 256 Byte Serial EEPROM contains the module configuration information. The EEPROM can be configured to a customer's.

M29DW324DB70N1 : 32 Mbit 4mb x8 or 2mb X16, Dual Bank 16:16, Boot Block 3v Supply Flash Memory.

M36W108AB100ZM1T : 8 Mbit 1mb X8, Boot Block Flash Memory And 1 Mbit 128kb x8 SRAM Low Voltage Multi-memory Product.

M53620405CT0 : SIMM. = M53620405CY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx16)x2+(4Mx4)x1 ;; Production Status = Eol ;; Comments = -.

M5M5Y416CWG-70HI : 4194304-bit (262144-word BY 16-bit) CMOS Static RAM. Notice: This is not a final . Some parametric limits are subject to change. Those are summarized in the part name table below. The a f amily of low v oltage 4-Mbit static RAMs organized 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18�m CMOS technology. The M5M5Y416C is suitable f or memory applications where a simple interf acing , battery.

MH16S64PHB : 128mbyte Synchronous DRAM: 16mx64. Some contents are subject to change without notice. The 16777216 - word by 64-bit Synchronous DRAM module. This consists of eight industry standard 16Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP. The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory.

MX23L8051 : 8M, 8Mx1. GENERAL x 1 bit structure Single Power Supply Operation to 3.6 volt for read operations Latch-up protected to 100mA from -1V to Vcc +1V PERFORMANCE High Performance - Fast access time: 20MHz serial clock + 1TTL Load) Low Power Consumption - Low active read current: 10mA (typical) 20MHz - Low standby current: 30uA (CMOS) SOFTWARE Input Data Format - 1-byte.

SST29VE020 : 2 Mbit ( 256k X8 ) Page-mode EePROM. Single Voltage Read and Write Operations � 5.0V-only for � 3.0-3.6V for � 2.7-3.6V for SST29VE020 Superior Reliability � Endurance: 100,000 Cycles (typical) � Greater than 100 years Data Retention Low Power Consumption � Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V � Standby Current: 10 �A (typical) Fast Page-Write Operation.

TC59S6432DFT : Type = Sdram ;; Density (Mb) = 64 ;; Geometry = 2M X 32 ;; Refresh = 4K/64ms ;; = CL2 & CL3; Up to 200MHz Clock Frequency ;; Power = Standard/low ;; Date = 2001-04-20.

TM124MBK36U-60 : ti TM124MBK36U, 1 048 576, BY 36-Bit DRAM Module. Organization TM124MBK36F. TM248NBK36F. Single 5-V Power Supply (�10% Tolerance) 72-Pin Single-In-Line Memory Module (SIMM) for Use With Socket TM124MBK36F � Utilizes Two 16-Megabit and One 4-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ) Packages TM248NBK36F � Utilizes Four 16-Megabit and Two 4-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ).

V437316S04V : 3.3 Volt 16M X 72 High Performance Unbuffered Ecc Sdram Module, 168 Pin Dimm.

�PD23C64000BL : . The a 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 8,388,608 words by 8 bits, WORD mode : 4,194,304 words by 16 bits). The active levels of OE (Output Enable Input) can be selected with mask-option. The �PD23C64000BL is packed in 48-pin PLASTIC TSOP (I). Word organization 8,388,608 words by 8 bits (BYTE mode).

MT36VDDF12872G-262XX : 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184. s: Memory Category: DRAM Chip ; Density: 9663676 kbits ; Number of Words: 128000 k ; Bits per Word: 72 bits ; Package Type: DIMM-184 ; Pins: 184 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 0.7500 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

N04L63W2AB7I : 256K X 16 STANDARD SRAM, 70 ns, PBGA48. s: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: BGA, 6 X 8 MM, BGA-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 3V ; Access Time: 70 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).