U632H16D1C45 : 16 Kb

U634H256BD1K45 : 256 Kb

U635H256CSK25 : 256 Kb

U636H04SC45 : 4 Kb Powerstore 512x8 Nvsram

UL62H1616BTK20 :

UL62H1708BSK55 :

SAP5SB-B-G1-R : Spec. 3.0 Compatible Universal as-i IC

TSIC201WST : High Precision Temperature Sensor IC

TSIC506WCB : High Precision Temperature Sensor IC

AT49F004T : 4-megabit 512k X 8/ 256k X 16 CMOS Flash Memory. � 5V Read � 5V Programming Fast Read Access Time 55 ns Internal Erase/Program Control Sector Architecture � One 8K Words (16K bytes) Boot Block with Programming Lockout � Two 4K Words (8K bytes) Parameter Blocks � One 240K Words (480K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds Byte-by-Byte or Word-By-Word Programming 10 �s Typical.

CY7C1297A-83NC : Standart Synchronous SRAM. Fast access times: 9 and 10 ns Fast clock speed: 66 and 50 MHz Provide high performance 2-1-1-1 access rate Fast OE access times: 5 and 6 ns Single +3.3V �5% and +10% power supply 5V tolerant inputs except I/Os Clamp diodes to VSSQ at all inputs and outputs Common data inputs and data outputs Byte Write Enable and Global Write control Three chip enables.

DPSD64MX8WKY5 : 512 MB Synchronous DRAM. The LP-StackTM series is a family of interchangeable memory modules. The 512 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed with 32 Meg x 8 SDRAMs. This 256 Megabit based LP-StackTM module, the DPSD64MX8WKY5 has been designed to fit in the same footprint.

DPSD8MX16RKY5 : 8mx16 Sdram. 128 Megabit Synchronous DRAM DPSD8MX16RKY5 High Density Memory Device : The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed with 4 Meg x 16 SDRAMs. This 64 Megabit based M-Densus module,.

FM93C46 : 1 Kb. 1K-Bit Serial CMOS EePROM (Microwire Bus Interface). FM93C46 1024-Bit Serial CMOS EEPROM (MICROWIRETM Synchronous Bus) a 1024-bit CMOS non-volatile EEPROM organized x 16-bit array. This device MICROWIRE interface which a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compatible to many of standard Microcontrollers and Microprocessors.

GS8170DW36A : SygmaRAM. Double Late Write mode, Pipelined Read mode JEDEC-standard SigmaRAMTM pinout and package +150/�100 mV core power supply 1.8 V CMOS Interface ZQ controlled user-selectable output drive strength Dual Cycle Deselect Burst Read and Write option Fully coherent read and write pipelines Echo Clock outputs track data output drivers Byte write operation (9-bit.

K3N3V6000D : 4M bit. = K3N3V6000D 4M-Bit (256K X 16) CMOS Mask ROM(ePROM TYPE) ;; Organization = 256Kx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 120,100 ;; Package = 40DIP ;; Current (mA/uA) = 20,25/30 ;; Production Status = Eol ;; Comments = EPROM Type.

K3P9V2000M : 128M bit. = K3P9V2000M 128M-Bit(8Mx16/4Mx32) CMOS Mask ROM ;; Organization = 8Mx16,4Mx32 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100(30) ;; Package = 70SSOP ;; Current (mA/uA) = 70,80/30 ;; Production Status = Eol ;; Comments = -.

K6T4016C3B : = K6T4016C3B 256K X 16 Bit Low Power CMOS Static RAM ;; Organization = 256Kx16 ;; Vcc(V) = 4.5~5.5 ;; Speed-tAA(ns) = 55,70 ;; Operating Temperature = C,i ;; Operating Current(mA) = 130 ;; Standby Current(uA) = 50 ;; Package = 44TSOP2 ;; Production Status = Eol ;; Comments = K6X4016C3F Recommended.

K7A321800M : SB & SPB. = K7A321800M 2Mx18 Bit Synchronous Pipelined Burst SRAM ;; Organization = 2Mx18 ;; Operating Mode = SPB ;; VDD(V) = 3.3 ;; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ;; Speed-tcyc (MHz) = 250,225,200,167,150,138 ;; I/o Voltage(V) = 3.3,2.5 ;; Package = 100TQFP,119BGA,165FBGA ;; Production Status = Mass Production ;; Comments = 2E1D.

M27C800-100B6TR : 8 Mbit 1mb x8 or 512kb X16 uv EPROM And OTP EPROM. � 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION � Active Current 8MHz � Stand-by Current 50�A PROGRAMMING VOLTAGE: � 0.25V PROGRAMMING TIME: 50�s/word ELECTRONIC SIGNATURE � Manufacturer Code: 20h � Device Code: B2h The an 8 Mbit EPROM offered in the two ranges.

MO805256K36 : SRAM, Symmetric Pipeline Burst, 256K X 36. Overview The MoSys is a high performance, low power symmetric pipelined-burst-SRAM (SPSRAM). Fabricated using an advanced low power, high performance CMOS process, the MoSys MC805256K36 is backward pin and function compatible with industry standard 64Kx36 and 128Kx36. With proper implementation, PC boards can work transparently with or 256Kx36 configurations,.

NM24C17U : 16 Kb. 16k-bit Serial EePROM 2-wire Bus Interface. The NM24C16U/17U devices are 16K (16,384) bit serial interface CMOS EEPROMs (Electrically Erasable Programmable ReadOnly Memory). These devices fully conform to the Standard I2CTM 2-wire protocol which uses Clock (SCL) and Data I/O (SDA) pins to synchronously clock data between the "master" (for example a microprocessor) and the "slave" (the EEPROM.

X76F200 : Secure Serial Flash, ISO 7816. 64-bit Password Security One Array (240 Bytes) Two Passwords (16 Bytes) --Read Password --Write Password Programmable Passwords Retry Counter Register --Allows 8 tries before clearing of the array 32-bit Response to Reset (RST Input) 8 byte Sector Write mode 1MHz Clock Rate 2 wire Serial Interface Low Power CMOS to 5.5V operation --Standby current Less.

AT27BV4096-12JIT/R : 256K X 16 OTPROM, 120 ns, PQCC44. s: Memory Category: PROM ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: PLASTIC, LCC-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 120 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

MKI48Z02B-15 : 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24. s: Memory Category: NVRAM, NVSRAM, SRAM Chip ; Density: 16 kbits ; Number of Words: 2 k ; Bits per Word: 8 bits ; Package Type: DIP, PLASTIC, DIP-24 ; Pins: 24 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 150 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

5962-8959830M7C : 128K X 8 STANDARD SRAM, 120 ns, CDSO32. s: Memory Category: SRAM Chip ; Density: 1049 kbits ; Number of Words: 128 k ; Bits per Word: 8 bits ; Package Type: SOJ, CERAMIC, SOJ-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 120 ns ; Operating Temperature: -55 to 125 C (-67 to 257 F).

72211L12JGI8 : IC,FIFO,512X9,SYNCHRONOUS,CMOS,LDCC,32PIN,PLASTIC. s: Memory Category: FIFO.