U6264ADG07 :

U6264AS1G07L :

U62H256AS2K55LL :

UL62H1616BTA35 :

UL62H1616BTK15 :

UL62H1708ASA55 :

UL631H256BSK45 : 256 Kb

U62H256AS2A35LLG1 : Automotive FAST 32K X 8 SRAM

U6264BSC07LL : Standard 5K X 8 SRAM

820V32 : Burst SRAM. Synchronous Burst SRAMs, 2Meg, 64K X 32,3.3 V. Single 3.3V +5%/-5% power supply Separate VDDQ to allow to 3.465V output supply level High frequency operation: 117MHz Fast access time: 4.5ns Clock to Q Low power: 0.5mA ISB and IDD static FT mode pin for either flow-thru or pipeline operation LBO mode pin for linear or interleave (PentiumTM and X86) Byte write (BWE) and global write (GW) operation.

AB9961 : a 25ns Fast 4k X 8bit or 2k X 16bit or 4k X 8 to 2k X 16bit Bus Translator Dual Ported S-ram.

FM25040 : Serial FRAM. Density = 4Kbit ;; Interface = Spi Mode 0 ;; Speed = 2.1MHz ;; VDD = 5V.

FM93CS56LZ : 2K-Bit Serial EePROM (Microwire Bus Interface) w/ Data Protect And Sequential Read.

HY57V561620BT : 4 Banks X 4M X 16Bit Synchronous DRAM. The a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized HY57V561620B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input.

KMM390S6428BT1 : Registered DIMM. = KMM390S6428BT1 64Mx72 Sdram Dimm With PLL & Register Based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V Sdrams With SPD ;; Density(MB) = 512 ;; Organization = 64Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75 ;; #of Pin = 168 ;; Power = G ;; Component Composition = (64Mx4)x18+Drive ICx3+PLL+EEPROM ;; Production Status.

MH64S72VJG-5 : . The 67108864 - word 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 4 Sy nchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package prov ides any application where high densities and large of quantities memory are required. This is a socket-ty pe memory m odule ,suitable f or easy interchange or addition of module.

MR27V3202F : 32 M. 2 Meg 16 or 4 Meg 8 Production Programmed Read Only Memory (P2ROM).

MT18LSDT1672G : 168-Pin Sdram Dimms, Registered, (x72). JEDEC-standard 168-pin, dual in-line memory module (DIMM) PC133- and PC100-compliant Registered inputs with one-clock delay Phase-lock loop (PLL) clock driver to reduce loading Utilizes 100 MHz and 133 MHz SDRAM components ECC-optimized pinout Single +3.3V power supply Fully synchronous; all signals registered on positive edge of PLL clock Internal.

TC55V16100 : SRAM - High Speed Asynch. Density = 16Mb ;; Organization = 1M X 16 ;; Speed (ns) = 12,15 ;; Package = Tsop ;; Voltage (V) = 3.3 ;; Comments =.

TM4SR72EPH : 4,194,304 BY 72-bit Sdram Module (dimm). Organization x 72 Bits x 72 Bits Single 3.3-V Power Supply (�10% Tolerance) Designed for 66-MHz 4-Clock Systems JEDEC 168-Pin Dual-In-Line Memory Module (DIMM) Without Buffer for Use With Socket TM2SR72EPH Uses Nine 16M-Bit Synchronous Dynamic RAMs (SDRAMs) 8-Bit) in Plastic Thin Small-Outline Packages (TSOPs) TM4SR72EPH Uses 18 16M-Bit SDRAMs 8-Bit).

V53C8126L : Asynchronous->3.3V FPM. Ultra-high Performance, 3.3v Fast Page Mode CMOS Dynamic RAM: 128kx8.

K4T1G044QA : 1Gb A-die DDR2 SDRAM The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 667Mb/sec/pin (DDR2-667) for general applications. The chip is designed to comply with the following key DDR2 SDRAM such.

CAT14016 : he CAT14016 (see table below) is a memory and supervisory solution for microcontroller based systems. A CMOS serial EEPROM memory and a system power supervisor with brown-out protection are integrated together. Memory interface is via both the standard (100kHz) as well as fast (400kHz) I�C protocol. The CAT14016 provides a precision VCC sense circuit.

CY7C131-35FMB : 1K X 8 MULTI-PORT SRAM, 35 ns, CQFP48. s: Memory Category: SRAM Chip ; Density: 8 kbits ; Number of Words: 1 k ; Bits per Word: 8 bits ; Package Type: QFP, CERAMIC, QFP-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 35 ns ; Operating Temperature: -55 to 125 C (-67 to 257 F).

CY9C62256-70PXI : SPECIALTY MEMORY CIRCUIT, PDIP28. s: Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Package Type: DIP, 0.600 INCH, DIP-28 ; Pins: 28 ; Logic Family: CMOS ; Supply Voltage: 5V ; Operating Temperature: -40 to 85 C (-40 to 185 F).

7025L15F : 8K X 16 DUAL-PORT SRAM, 15 ns, QFP84. s: Memory Category: SRAM Chip ; Density: 131 kbits ; Number of Words: 8 k ; Bits per Word: 16 bits ; Package Type: FP-84 ; Pins: 84 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 15 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

71V424S10PHG8 : 512K X 8 STANDARD SRAM, 10 ns, PDSO44. s: Memory Category: SRAM Chip ; Density: 4194 kbits ; Number of Words: 512 k ; Bits per Word: 8 bits ; Package Type: TSOP, 0.400 INCH, TSOP2-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).