High speed access time : 25/30/35/40 ns Industry-standard x 16 pinouts and timing functions. Single 5V (�10%) power supply. All device pins are TTL- compatible. 256-cycle refresh in 4ms. Refresh modes: RAS only, CAS BEFORE RAS (CBR) and HIDDEN. Conventional FAST PAGE MODE access cycle. BYTE WRITE and BYTE READ access cycles.

The is a randomly accessed solid state memory containing 1,048,551 bits organized a x16 configuration. The T221160A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode operation The T221160A CAS function and timing are

determined by the first CAS to transition low and by the last to transition back high. Use only one of the two CAS and leave the other staying high during WRITE will result in a BYTE WRITE. CASL transiting low in a WRITE cycle will write data into the lower byte (IO1~IO8), and CASH transiting low will write data into the upper byte (IO9~16). Taiwan Memory Technology, Inc. reserves the right 1 to change products or specifications without notice.

PIN NO. SYM. A0-A7 RAS CASH CASL - I/O16 Vcc Vss NC TYPE Input Address Input Row Address Strobe Column Address Strobe /Upper Byte Control Column Address Strobe /Lower Byte Control Write Enable Output Enable DESCRIPTION

Taiwan Memory Technology, Inc. reserves the right 2 to change products or specifications without notice.

to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Voltage on Any pin Relative to VSS..... to 7V Operating Temperature, to +70�C Storage Temperature (plastic)....... to +150�C Power Dissipation........................................... 1.0W Short Circuit Output Current.......................... 50mA *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage

Ta 70�C; VCC 10 % unless otherwise noted) DESCRIPTION CONDITIONS Supply Voltage Supply Voltage Input High (Logic) voltage Input Low (Logic) voltage Input Leakage Current 0V VIN 7V 0V VOUT 7V Output Leakage Current Output(s) disabled Output High Voltage IOH -5 mA Output Low Voltage IOL 4.2 mA Note: 1.All Voltages referenced to Vss SYM. Vcc Vss VIH VIL ILI ILO VOH VOL MIN MAX 0 Vcc+1 UNITS uA V NOTES 1

Taiwan Memory Technology, Inc. reserves the right 3 to change products or specifications without notice.