STP80NF12 Datasheet by STMicroelectronics | Digi-Key Electronics

STP80NF12 Datasheet by STMicroelectronics

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This is information on a product in full production.
February 2014 DocID9204 Rev 8 0/12
STP80NF12
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET™ II
Power MOSFET in a TO-220 package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Exceptional dv/dt capability
•100% avalanche tested
•Application oriented characterization
Application
•Switching applications
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer
applications. It is also intended for any
applications with low gate drive requirements.
TO-220
123
TA B
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6
Type V
DSS
R
DS(on)
max I
D
STP80NF12 120 V < 0.018 Ω80 A
Table 1. Device summary
Order code Marking Package Packaging
STP80NF12 P80NF12 TO-220 Tube
www.st.com
Contents STP80NF12
1/12 DocID9204 Rev 8
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DocID9204 Rev 8 2/12
STP80NF12 Electrical ratings
12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 120 V
V
GS
Gate-source voltage ± 20 V
I
D (1)
1. Limited by package
Drain current (continuous) at T
C
= 25 °C 80 A
I
D
Drain current (continuous) at T
C
=100 °C 60 A
I
DM(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
C
= 25 °C 300 W
Derating factor 2.0 W/°C
dv/dt
(3)
3. I
SD
< 80 A, di/dt < 300 A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 10 V/ns
E
AS (4)
4. Starting T
J
= 25 °C, I
D
= 40 A, V
DD
= 50 V
Single pulse avalanche energy 350 mJ
T
J
T
stg
Operating junction temperature
Storage temperature -55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max 0.5 °C/W
R
thJA
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose 300 °C
Electrical characteristics STP80NF12
3/12 DocID9204 Rev 8
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage I
D
= 250 μA, V
GS
= 0 120 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= max rating
V
DS
= max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0) V
GS
= ±20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 4 V
R
DS(on)
Static drain-source on
resistance V
GS
= 10 V, I
D
= 40 A 0.013 0.018 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs (1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
=15 V, I
D
= 40 A - 80 S
C
iss
Input capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
-4300 pF
C
oss
Output capacitance - 600 pF
C
rss
Reverse transfer
capacitance -230 pF
Q
gs
Total gate charge V
DD
= 80 V, I
D
= 80 A
V
GS
=10 V
-140189nC
Q
gs
Gate-source charge - 23 nC
Q
gd
Gate-drain charge - 51 nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 50 V, I
D
= 40 A,
R
G
=4.7 Ω, V
GS
=10 V
See Figure 13
-40- ns
t
r
Rise time - 145 - ns
t
d(off)
Turn-off delay time - 134 - ns
t
f
Fall time - 115 - ns
DocID9204 Rev 8 4/12
STP80NF12 Electrical characteristics
12
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
I
SD
Source-drain current - - 80 A
I
SDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - - 320 A
V
SD(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
=80 A, V
GS
=0 - - 1.3 V
t
rr
Reverse recovery time I
SD
=80 A,
di/dt = 100 A/µs,
V
DD
=35 V, T
J
= 150 °C
-155 ns
Q
rr
Reverse recovery charge - 0.85 µC
I
RRM
Reverse recovery current - 11 A
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Electrical characteristics STP80NF12
5/12 DocID9204 Rev 8
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B
VDSS
vs. temperature Figure 7. Static drain-source on resistance
sumo VGs(V) 12 C(PF) 8000 6000 4000 2D00 a 40 an 120 I60 (Mun) o 10 20 30 4o Vus(V) WSW) mum mm) (mm) (mm) 2.0 H} 1.5 0,9 Ln 0.3 0.5 0.7 m 750 o 50 um ntc) —50 o 50 mo M's)
DocID9204 Rev 8 6/12
STP80NF12 Electrical characteristics
12
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs. temperature Figure 11. Normalized on resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
Test circuits STP80NF12
7/12 DocID9204 Rev 8
3 Test circuits
Figure 13. Switching times test circuit for
resistive load Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
B
B
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID9204 Rev 8 8/12
STP80NF12 Package mechanical data
12
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
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Package mechanical data STP80NF12
9/12 DocID9204 Rev 8
Figure 19. TO-220 type A drawing
BW\SH$B5HYB7
DocID9204 Rev 8 10/12
STP80NF12 Package mechanical data
12
Table 8. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P 3.75 3.85
Q 2.65 2.95
Revision history STP80NF12
11/12 DocID9204 Rev 8
5 Revision history
Table 9. Revision history
Date Revision Changes
21-Jun-2004 2Preliminary version
24-Jul-2006 3 The document has been reformatted, SOA updated
31-Jan-2007 4 Typo mistake on Table 2.
10-Apr-2007 5 Typo mistake on Table 2 and Table 3
19-Apr-2007 6 Corrected value on Table 4
17-Nov-2008 7 Inserted E
AS
value on Table 2.
26-Feb-2014 8
Updated: Section 4: Package mechanical data
Inserted E
AS
value on Table 2.
Added value V
GS
on Table 4
W m
DocID9204 Rev 8 12/12
STP80NF12
12
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