Part | STM51004G |
Category | Discrete => Transistors => Bipolar => Medium frequency |
Description | 1300 NM Laser in Receptacle Package, Medium Power |
Company | Siemens (acquired by Infineon Technologies Corporation) |
Datasheet | Download STM51004G Datasheet |
Quote |
Features, Applications |
Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power Hermetically sealed subcomponent, similar 18 SM Pigtail with optional flange Connector/Flange FC / without flange DIN / without flange FC / with flange DIN / with flangeMaximum Ratings Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical to the case temperature. Parameter Module Operating temperature range at case Storage temperature range Soldering temperature tmax 2 mm distance from bottom edge of case Laserdiode Direct forward current Radiant power CW Reverse voltage Symbol Values Unit Maximum Ratings (cont'd) Parameter Monitor Diode Reverse voltage Symbol Values UnitCharacteristics All optical data refer to a coupled �m SM fiber, = 25 �C. Parameter Laser Diode Optical output power Emission wavelength center of range 0.5 mW Spectral bandwidth 0.5 mW (RMS) Threshold current + 85 �C) Forward voltage 0.5 mW Radiant power at threshold Slope efficiency Differential series resistance Rise time/Fall time Monitor Diode Dark current, = 0 Photo current, V �W mW/A ns Symbol Values Unit Laser Diode Radiant Power in Singlemode Fiber1.2 1 Relative Optical Power Optical Power in mW Forward Current in mA Monitor Diode Dark Current IR = f(TA) port 5 V |
Some Part number from the same manufacture Siemens (acquired by Infineon Technologies Corporation) |
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