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Q62702-C1831 Datasheet PDF - Siemens Semiconductor Group
PNP Silicon AF Transistors
BCX 51 . . . BCX 53
Features For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 54 … BCX 56 (NPN)
q
Type BCX 51 BCX 51-10 BCX 51-16 BCX 52 BCX 52-10 BCX 52-16 BCX 53 BCX 53-10 BCX 53-16
Marking AA AC AD AE AG AM AH AK AL
Ordering Code (tape and reel) Q62702-C1847 Q62702-C1831 Q62702-C1857 Q62702-C1743 Q62702-C1744 Q62702-C1900 Q62702-C905 Q62702-C1753 Q62702-C1502
Pin Configuration 1 2 3 B C E
Package1) SOT-89
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
04. 96
BCX 51 . . . BCX 53
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol BCX 51 VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg 45 45 5
Values BCX 52 60 60 5 1 1. 5 100 200 1 150
Unit BCX 53 80 100 5 A mA W ˚C V
Total power dissipation, TS = 130 ˚C Ptot
– 65 … + 150
75 20
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1. 5 mm/6 cm2 Cu.
Semiconductor Group
2
BCX 51 . . . BCX 53
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCX 51 BCX 52 BCX 53 Collector-base breakdown voltage IC = 100 µA BCX 51 BCX 52 BCX 53 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCX 51, BCX 52, BCX 53 BCX 51-10, BCX 52-10, BCX 53-10 BCX 51-16, BCX 52-16, BCX 53-16 IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz fT – 125 – MHz...