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BB 620
Silicon Variable Capacitance Diode
q
BB 620
For Hyperband TV/VTR tuners, Bd I
Type BB 620
Marking red S
Ordering Code (tape and reel) Q62702-B403
Pin Configuration
Package1) SOD-123
Maximum Ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rt More View
h JA
≤
Symbol VR IF Top Tstg
Values 30 20 – 55 … + 150
Unit V mA
– 55 … + 125 ˚C
450
K/W
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
07.94
BB 620
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 85 ˚C Diode capacitance f = 1 MHz VR = 1 V VR = 28 V Capacitance ratio VR = 1 V, 28 V; f = 1 MHz Capacitance matching VR = 1 V … 28 V, f = 1 MHz Series resistance CT = 30 pF; f = 100 MHz Series inductance Symbol min. IR – – CT 62 2.9 CT1 CT28
∆CT
Values typ. – – max.
Unit nA 10 200 pF
– – – – 1.3 2.8
76 3.4 25 2.5 – – – % Ω nH
19.5 – – –
C T rS LS
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
2
Q62702-B404 Silicon Variable Capacitance Diode (For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) - Siemens Semiconductor Group
Q62702-B478 Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) - Siemens Semiconductor Group
Q62702-B479 Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V) - Siemens Semiconductor Group