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Q62702-B0909 (Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance))
BB 664
Silicon Variable Capacitance Diode Preliminary data • For VHF TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure
2
1
VES05991
Type BB 664 BB 664
Marking Ordering Code 4 4 Q62702- B0909 (u More View
nmatched) Q62702- B0908 (in-lined matched)
Pin Configuration Package 1=C 2=A SCD-80
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55.. ...+125 -55... ...+150 mA °C Unit V
VR VRM IF T op T stg
Semiconductor Group Semiconductor Group
11
Jul-10-1998 1998-11-01
BB 664
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 10 100 nA Unit
IR IR
-
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics Diode capacitance
CT
39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 11.8 16.4 0.6 0.6 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 -
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz
Capacitance ratio
CT2/C T25
11
-
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
CT1/C T28 15.2
∆CT/C T -
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio 1) % Ω nH
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
rs Ls
VR = 5 V, f = 470 MHz
Series inductance
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group Semiconductor Group
22
Jul-10-1998 1998-11-01
BB 664
Diode capacitance CT = f (V R) f = 1MHz
40
pF
5
CT
30
25
20
15
10
5
0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 V 30
VR
Semiconductor Group Semiconductor Group
33
Jul-10-1998 1998-11-01
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