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Q62702-A1145
Preliminary data Silicon RF Switching Diode
BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation...
Siemens Semiconductor Group
Octopart Stock #: O-360417
Findchips Stock #: 360417-F
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Description
BAR 81 Silicon RF Switching Diode
Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss
Type BAR 81
Marking Ordering Code BBs Q62702Q62702-A1145
Pin Configuration 1=C 2=A 3=C 4=A
Package MW-4
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range S
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torage temperature Symbol Values 30 100 - 55 ... + 125 - 55 ... + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-26-1996 BAR 81 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 0.93 20 nA V 1 VR = 20 V, TA = 25 °C Forward voltage VF IF = 100 mA AC characteristics Diode capacitance CT 0.6 0.57 0.7 0.15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf - Ω nH IF = 5 mA, f = 100 MHz Series inductance chip to ground Ls Semiconductor Group 2 Feb-26-1996 BAR 81 Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Package Semiconductor Group 3 Feb-26-1996Similar Datasheet
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