Details, datasheet, quote on part number: OM6520SC
| Part | OM6520SC |
| Category | |
| Description | 1200V Discrete Hi-rel Igbt in a TO-258AA Package |
| Company | International Rectifier Corp. |
| Datasheet | Download OM6520SC Datasheet |
| Quote |
| Features, Applications |
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTIONThis IGBT power transistor features the high switching speeds of a power MOSFET and the low on-resistance of a bipolar transistor. It is ideally suited for high power switching applications such as frequency converters for 3� motors, UPS and high power SMPS. PART NUMBER OM6520SC IC (Cont.) A 25 V(BR)CES V 1000 VCE (sat) (Typ.) 4.0 Tf (Typ.) ns 300 qJC �C/W �C 150 NOTE: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current mA nA Min. Typ. Max. Units Test Conditions 1000 V VCE 250 �A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 125�C IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Turn-Off Losses pF nS VCEclamp 15 A VGE = 3.3 VCE 15 A VGE = 0 VCE = 25 mHz VCC 15 A VGE 6.5 V VCE = VGE, 1 mA VGE = 25�C VGE = 125�C VCE(sat) Collector Emitter VGE �20 V VCE 0 V IGBT CHARACTERISTICS Parameter - OFF (see Note 1) V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf Eoff Vf Ir trr Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Turn-Off Losses Maximum Forward Voltage Maximum Reverse Current Reverse Recovery Time pF nS VCEclamp 15 A VGE = 3.3 VCE 15 A VGE = 0 VCE = 25 mHz VCC 15 A VGE 6.5 V VCE = VGE, 1 mA VGE = 25�C VGE = 125�C VCE(sat) Collector Emitter mA nA Min. Typ. Max. Units Test Conditions 1000 V VCE 250 �A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 125�C VGE �20 V VCE 0 V |
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