Details, datasheet, quote on part number: NAND01GR3A0CZA6E
| Part | NAND01GR3A0CZA6E |
| Category | |
| Description | 256/512mb/1gb (x8/x16, 1.8/3v, 528 Byte Page) NAND Flash Memories + 256/512mb (x16/x32, 1.8v) Lpsdram, MCP |
| Company | ST Microelectronics, Inc. |
| Datasheet | Download NAND01GR3A0CZA6E Datasheet |
| Features, Applications |
| 1.8/3V, 528 Byte Page) NAND Flash Memories (x16/x32, 1.8V) LPSDRAM, MCP Features Multi-Chip Packages � 1 die of 256 Mb, (x8/ x16) NAND Flash + 1 die Mb (x16) SDR LPSDRAM � 1 die of 256 Mb, (x8/ x16) NAND Flash + 2 dice Mb (x16) SDR LPSDRAMs � 1 die of 256 Mb, (x8/ x16) NAND Flash +1 die Mb (x16) DDR LPSDRAM � 1 die Mb (x16) NAND Flash + 1 die Mb (x16) DDR LPSDRAM Supply voltages � VDDF 3.6V � VDDD = VDDQD to 1.9V Electronic Signature ECOPACK� packages Temperature range to 85�C Fast Block Erase � Block erase time: 2ms (typ) Status Register Data integrity � 100,000 Program/Erase cycles � 10 years Data Retention NAND Interface or x16 bus width � Multiplexed Address/ Data Page size � x8 device: + 16 spare) Bytes � x16 device: + 8 spare) Words Block size � x8 device: + 512 spare) Bytes � x16 device: + 256 spare) Words Page Read/Program � Random access: 15�s (max) � Sequential access: 50ns (min) � Page program time: 200�s (typ) Copy Back Program mode � Fast page copy without external buffering Interface: x 32 bus width Deep Power Down mode 1.8v LVCMOS interface Quad internal Banks controlled by BA0 and BA1 Automatic and controlled Precharge Auto Refresh and Self Refresh � 8,192 Refresh cycles/64ms � Programmable Partial Array Self Refresh � Auto Temperature Compensated Self Refresh Wrap sequence: sequential/interleave Burst Termination by Burst Stop command and Precharge command Part Number NAND256R3M0 NAND Product 256 Mbit (x16) 3V LPSDRAM Product 256 Mbit SDR, 104MHz 256 Mbit DDR 133MHz 256 Mbit SDR 104MHz 256 Mbit SDR 104MHz 512 Mbit 1.8V 256 Mbit DDR 133MHz 512 Mbit DDR x 512Mbit NAND 3V 512Mbit SDR (2x16) (2x256Mbit SDR 1.8V,104Mhz 512 Mbit SDR x 256Mbit SDR 104MHz 512Mbit SDR 1.8V, 133MHz Package TFBGA107 TFBGA149 LFBGA LFBGA137 TFBGA137 Maximum rating. 16 Package Mechanical. 17 Part Numbering. 21 Revision history. 22 |
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| Some Part number from the same manufacture ST Microelectronics, Inc. |
| NAND01GR3A0CZA6F 256/512mb/1gb (x8/x16, 1.8/3v, 528 Byte Page) NAND Flash Memories + 256/512mb (x16/x32, 1.8v) Lpsdram, MCP |
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PSD4235F1V-15B81 : Flash In-system-programmable Peripherals For 16-bit MCUs PSD954490MT : Flash In-system Programmable Isp Peripherals For 8-bit MCUs ZPSD403A2V-C-20J : Low Cost Field Programmable Microcontroller Peripherals M93C56-RDW3TP : 16kbit, 8kbit, 4kbit, 2kbit and 1kbit (8-bit or 16-bit Wide) Microwire Serial Access Eeprom M93C56-WDW3P/W : 16kbit, 8kbit, 4kbit, 2kbit and 1kbit (8-bit or 16-bit Wide) Microwire Serial Access Eeprom PSD853F5-15JIT : Flash In-system Programmable ISP Peripherals For 8-bit MCUs NAND256W3A0BV6T : 256/512mb/1gb (x8/x16, 1.8/3v, 528 Byte Page) NAND Flash Memories + 256/512mb (x16/x32, 1.8v) Lpsdram, MCP BZW50-180RL : Tv - Diode Circuit Protection 180V 5000W; TRANSIL OVP CLAMPING 180V R6 Specifications: Package / Case: R6, Axial ; Packaging: Cut Tape (CT) ; Polarization: Unidirectional ; Power (Watts): 5000W ; Voltage - Reverse Standoff (Typ): 180V ; Voltage - Breakdown: 200V ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant M24C32-WDW6P/P : 4K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 Specifications: Density: 33 kbits ; Number of Words: 4 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 0 MHz ; Supply Voltage: 2.5V ; Package Type: 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8, SOP ; Pins: 8 ; Operating Range: AUTOMOTIVE ; Operating Tempe M95128-WMN6TG : 16K X 8 SPI BUS SERIAL EEPROM, PDSO8 Specifications: Density: 131 kbits ; Number of Words: 16 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 5 MHz ; Logic Family: CMOS ; Supply Voltage: 5V ; Package Type: 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SON-8 ; Pins: 8 ; Operating Ra STM8AH518ATDX : 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP48 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 24 MHz ; ROM Type: Flash ; Supply Voltage: 3 to 5.5 volts ; I/O Ports: 40 ; Package Type: LFQP, Other, 7 X 7 MM, ROHS COMPLIANT, LQFP-48 ; Operating Range: Industrial ; Pin Count: 48 ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Feature Z0107NN6AA4 : 800 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC Specifications: Thyristor Type: Triac, 4 QUADRANT LOGIC LEVEL TRIAC ; Package Type: ROHS COMPLIANT, PLASTIC PACKAGE-4 ; Pin Count: 4 ; VDRM: 800 volts ; IT(RMS): 1 amps |