NAND01G-N

www.DataSheet4U.com NAND01G-N 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package PRELIMINARY DATA Features summary ■ Multi-chip Package – NAND Flash Memory – 512 Mbit or 1 Gbit (x8/x16) Large Page Size NAND Flash Memory – 512 Mbit (x16) SDR or DDR LPSDRAM Temperature range – -30 up to 85 °C Supply voltage – NAND Flash : VDDF = 1.7V to 1.95V – LPSDRAM: VDDD = VDDQD = 1.7V to 1.9V Electronic Signature ECOPACK packages FBGA ■ TFBGA107 10.5 x 13 x 1.2mm TFBGA149 10 x 13.5 x 1.2mm ■ ■ ■ SDR/DDR LPSDRAM ■ ■ ■ ■ ■ ■ Flash Memory ■ Interface: x16 bus width Programmable Partial Array Self Refresh Auto Temperature Compensated Self Refresh Deep Power Down mode 1.8V LVCMOS interface Quad internal Banks controlled by BA0 and BA1 Wrap sequence: Sequential/Interleaved Automatic and Controlled Precharge Auto Refresh and Self Refresh 8,192 Refresh Cycles/64ms Burst Termination by Burst Stop command and Precharge Command Nand Interface – x8 or x16 bus width – Multiplexed address/data Page size – x8 device: (2048 + 64 spare) Bytes – x16 device: (1024 + 32 spare) Words Block size – x8 device: (128K + 4K spare) Bytes – x16 device: (64K + 2K spare) Words Page Read/Program – Random access: 25µs (max) – Sequential access: 50ns (min) – Page program time: 300µs (typ) Copy Back Program mode – Fast page copy without external buffering Fast Block Erase – Block Erase time: 2ms (typ) Chip Enable ‘don’t care’ – for simple interfacing with micro...