Details, datasheet, quote on part number: N01M083WL1A
| Part | N01M083WL1A |
| Category | Memory => SRAM |
| Title | Medical SRAM |
| Description | 1Mb, , 128K X 8, 2.3 - 3.6, 70, Medical Level 1 Processing, 32-STSOP, Kgd, |
| Company | NanoAmp Solutions, Inc. |
| Datasheet | Download N01M083WL1A Datasheet |
| Features, Applications |
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 1Mb Ultra-Low Power Asynchronous Medical CMOS SRAMThe is an integrated memory device intended for non life-support (Class or 2) medical applications. This device comprises a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp's N01M0818L2A, which has further reliability processing for life-support (Class 3) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01M083WL1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range to +85oC and is available in JEDEC standard packages compatible with other standard x 8 SRAMs FeaturesSingle Wide Power Supply Range to 3.6 Volts Very low standby current at 3.0V (Typical) Very low operating current at 3.0V and 1�s (Typical) Very low Page Mode operating current at 3.0V and 1�s (Typical) Simple memory control Dual Chip Enables (CE1and CE2) Output Enable (OE) for memory expansion Low voltage data retention Vcc = 1.8V Very fast output enable access time 30ns OE access time Automatic power down to standby mode Special Processing to reduce Soft Error Rate (SER) Part Number N01M083WL1AN Package Type 32 - STSOP I Operating Temperature Power Supply (Vcc) Speed Standby Current (ISB), Max 20 �A Operating Current (Icc), Max @ 1MHz Pin Name OE I/O0-I/O7 VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Power Ground Stock No. 23206-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. Functional Block DiagramWord Address Decode Logic Word Mux Input/ Output Mux and Buffers - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Write2 Read Active POWER Standby Active 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 1 MHz, = 25oC Min Max 8 Unit pF 1. These parameters are verified in device characterization and are not 100% testedItem Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range)Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current 1 �s Cycle Time2 Read/Write Operating Supply Current 70 ns Cycle Time2 Page Mode Operating Supply Current 70 ns Cycle Time2 (Refer to Power Savings with Page Mode Operation diagram) Maximum Standby Current IOH = 0.2mA IOL = -0.2mA VIN 0 to VCC OE = VIH or Chip Disabled VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT VCC=2.3 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC 2.3 V VCC = 1.8V, VIN = VCC or 0 Chip Disabled, tA= 85oC 1. Typical values are measured at Vcc=Vcc Typ., TA=25�C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. |
| Related products with the same datasheet |
| N01M083WL1AN |
| N01M083WL1AX-XXX |
| Some Part number from the same manufacture NanoAmp Solutions, Inc. |
| N01M083WL1AN 1Mb, , 128K X 8, 2.3 - 3.6, 70, Medical Level 1 Processing, 32-STSOP, Kgd, |
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| N02L163WN1BB 2Mb Ultra-low Power Asynchronous CMOS SRAM |
| N02M0818L1A 2Mb, , 256K X 8, 1.4 - 2.2, 70, Medical Level 1 Processing, 32-STSOP, Kgd, |
| N02M0818L2A 2Mb, , 256K X 8, 1.4 - 2.2, 70, Medical Level 2 Processing, Kgd, |
| N02M083WL1A 2Mb, , 256K X 8, 2.3 - 3.6, 70, Medical Level 1 Processing, 32-STSOP, Kgd, |
| N04C1630E1A 16Mb Flash, 4Mb SRAM, , 1Mb X 16 Flash, 256Kb X 16 SRAM, 2.7 - 3.3, 90, Enh. Boot Block Flash, Dual ce SRAM, 66-BGA, |
| N04C1630E3A 32Mb Flash, 4Mb SRAM, , 2Mb X 16 Flash, 256Kb X 16 SRAM, 2.7 - 3.3, 70/80, Dual Bank Flash, Dual ce SRAM, 66-BGA, |
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| N04L163WC2A 4Mb, , 256Kb X 16, 2.3 - 3.6, 55, 70, Dual CE, 44-TSOP2, 48-BGA, |
| N04M1618L1A 4Mb, , 256K X 16, 1.4 - 2.2, 85, Medical Level 1 Processing, 48-BGA, 44-TSOP 2, Kgd, |
| N04M163WL1A 4Mb, , 256K X 16, 2.3 - 3.6, 85, Medical Level 1 Processing, 48-BGA, 44-TSOP 2, Kgd, |
| N04T0830C1A 4Mb, , 512Kb X 8, 2.7 - 3.6, 60/70, Single CE, 32-STSOP1, 32-STSOP1R, |
|
N01L163WN1AB : Ultra-low Power SRAMs 1Mb, , 64Kb X 16, 2.3 - 3.6, 55, Single CE, 44-TSOP2, 48-BGA, N16T1630C2B : 1T-based Pseudo SRAMs 16Mb, , 1Mb X 16, 2.7 - 3.6, 55/70, Dual CE, 48-BGA, NT5DS64M4AW : 256mb DDR Synchronous DRAM N04Q1612C2BT-15C : 4Mb Ultra-low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256k��16 bit Power Saver Technology N08L163WC2CZ1 : 8Mb Ultra-low Power Asynchronous CMOS SRAM 512K �� 16 bit N16T1630C2BZ2 : 16Mb Ultra-low Power Asynchronous CMOS SRAM N04M1618L1AT : 4Mb Ultra-low Power Asynchronous Medical CMOS SRAM 256kx16 bit NT5DS4M32EG-6 : 1M �� 32 Bits �� 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL N16D1618LPAZ2-10I : 512K �� 16 Bits �� 2 Banks Low Power Synchronous DRAM |
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