M11B11664A-35T
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- Lifecycle statusDiscontinued
- DescriptionEDO DRAM, 64KX16, 35ns, CMOS, PDSO40
- Category
- SB Code8542.32.00.15
- HTS Code8542.32.00.02
- ECCN GovernanceEAR
- ECCNEAR99
- Width10.16 mm
- Length18.41 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeEDO PAGE
- JESD-30 CodeR-PDSO-G40
- Memory Width16
- Organization64KX16
- Package CodeTSOP2
- Sub CategoryDRAMs
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density1048576 bit
- Memory IC TypeEDO DRAM
- Operating ModeASYNCHRONOUS
- Power Supplies5 V
- Refresh Cycles256
- Terminal Pitch0.8 mm
- Access Time-Max35 ns
- Number of Ports1
- Number of Words65536 words
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Supply Current-Max0.13 mA
- Number of Functions1
- Number of Terminals40
- Standby Current-Max0.002 Amp
- Number of Words Code64K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeTSOP40/44,.46,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)5.5 V
- Supply Voltage-Min (Vsup)4.5 V
- Supply Voltage-Nom (Vsup)5 V
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M11B11664A-35T