KA1(L,M)0880B by onsemi Datasheet | DigiKey

KA1(L,M)0880B Datasheet by onsemi

FAIRCHILD BER/HEZCJNIDLKDTCJPe
©2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.2
Features
• Precision fixed operating frequency
• KA1L0880B(50KHz),KA1M0880B(67KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Latch up mode
•Soft start
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or RCC switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-3P-5L
1. DRAIN 2. GND 3. VCC 4. FB 5. S/S
1
Internal Block Diagram
#3 V
CC
32V
5
µ
A
5V
2.5R1R
1mA
0.1V
+
−
OVER VOLTAGE S/D
+
−
7.5V
25V
Thermal S/D
S
RQ
Power on reset
+
−
L.E.B
S
RQ
OSC
5V
Vref Internal
bias
Good
logic
SFET
#1 DRAIN
#2 GND
#4 FB
#5 Soft Start
9V
KA1L0880B/KA1M0880B
Fairchild Power Switch(FPS)
KA1L0880B/KA1M0880B
2
Absolute Maximum Ratings
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, VDD=50V, RG=25Ω, starting Tj=25°C
4. L=13µH, starting Tj=25°C
Parameter Symbol Value Unit
Maximum Drain voltage (1) VD,Max 800 V
Drain-Gate voltage (RGS=1MΩ)V
DGR 800 V
Gate-source (GND) voltage VGS ±30 V
Drain current pulsed (2) IDM 32.0 ADC
Single pulsed avalanche energy (3) EAS 810 mJ
Avalanche current (4) IAS 15 A
Continuous drain current (TC=25°C) ID8.0 ADC
Continuous drain current (TC=100°C) ID5.6 ADC
Maximum Supply voltage VCC,MAX 30 V
Input voltage range VFB −0.3 to VSD V
Total power dissipation PD190 W
Derating 1.54 W/°C
Operating ambient temperature TA−25 to +85 °C
Storage temperature TSTG −55 to +150 °C
KA1L0880B/KA1M0880B
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
Parameter Symbol Condition Min. Typ. Max. Unit
Drain source breakdown voltage BVDSS VGS=0V, ID=50µA 800 - - V
Zero gate voltage drain current IDSS
VDS=Max., Rating,
VGS=0V --50µA
VDS=0.8Max., Rating,
VGS=0V, TC=125°C- - 200 µA
Static drain source on resistance (note) RDS(ON) VGS=10V, ID=5.0A - 1.2 1.5 Ω
Forward transconductance (note) gfs VDS=15V, ID=5.0A 1.5 2.5 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 2460 -
pFOutput capacitance Coss - 210 -
Reverse transfer capacitance Crss - 64 -
Turn on delay time td(on) VDD=0.5BVDSS, ID=8.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
--90
nS
Rise time tr - 95 200
Turn off delay time td(off) - 150 450
Fall time tf - 60 150
Total gate charge
(gate-source+gate-drain) Qg VGS=10V, ID=8.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
- - 150
nC
Gate source charge Qgs - 20 -
Gate drain (Miller) charge Qgd - 70 -
S1
R
----=
KA1L0880B/KA1M0880B
4
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage VSTART -14 15 16 V
Stop threshold voltage VSTOP After turn on 9 10 11 V
OSCILLATOR SECTION
Initial accuracy FOSC KA1L0880B 45 50 55 kHz
KA1M0880B 61 67 73
Frequency change with temperature (2) ∆F/∆T−25°C ≤ Ta ≤ +85°C-±5±10 %
Maximum duty cycle Dmax 74 77 80 %
FEEDBACK SECTION
Feedback source current IFB Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA
Shutdown Feedback voltage VSD -6.9 7.5 8.1 V
Shutdown delay current Idelay Ta=25°C, 5V ≤ Vfb ≤ VSD 4.0 5.0 6.0 µA
SOFT START SECTION
Soft Start Voltage VSS VFB =2V 4.7 5.0 5.3 V
Soft Start Current ISS Sync & S/S=GND 0.8 1.0 1.2 mA
REFERENCE SECTION
Output voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V
Temperature Stability (1)(2) Vref/∆T−25°C ≤ Ta ≤ +85°C-0.30.6mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit IOVER Max. inductor current 4.40 5.00 5.60 A
PROTECTION SECTION
Thermal shutdown temperature (Tj) (1) TSD -140 160 - °C
Over voltage protection voltage VOVP -23 25 28 V
TOTAL DEVICE SECTION
Start Up current ISTART VCC=14V 0.1 0.3 0.45 mA
Operating supply current
(control part only) IOP Ta=25°C 6 12 18 mA
VCC zener voltage VZICC=20mA 30 32.5 35 V
KA1L0880B/KA1M0880B
5
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Fosc
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vs tart
Temperature [°C] Temperature [°C]
Temperature [°C] Temperature [°C]
Temperature [°C]Temperature [°C]
Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Supply Current Figure 4. Peak Current Limit
Figure 5. Start up Current Figure 6. Start Threshold Voltage
Iover
IST Vth(H)
IOP
KA1L0880B/KA1M0880B
6
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
Fig.7 Stop Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vs top
Fig.8 Maximum Duty Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vs d
Fig.11 Shutdown Delay Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vovp
Temperature [°C] Temperature [°C]
Temperature [°C] Temperature [°C]
Temperature [°C]Temperature [°C]
Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
Vth(L)
KA1L0880B/KA1M0880B
7
Typical Performance Characteristics (Continued)
(These characteristic grahps are normalized at Ta=25°C)
Figure 13. Soft Start Voltage Figure 14. Static Drain Source on Resistance
Fig.13 Soft Start Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vss
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25 0 25 50 75 100 125 150
Rdson
Temperature [°C] Temperature [°C]
()
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KA1L0880B/KA1M0880B
8
Package Dimensions
TO-3P-5L
1 mm Du msHAxw / ”3951 an m .. (may _ 3 MW? I: am: 3v] ‘5 saw mam mm (Bum 35m inn: mam i H275) (20am ¢ “5 3725‘va , [mam an! EL \ \ fin 25a >1: 2255 9am man” ‘3 3 ,, \ r \z 9, \ Zlflvw a E ‘ E m “as nea'fi _sue- »
KA1L0880B/KA1M0880B
9
Package Dimensions
TO-3P-5L (Forming)
KA1L0880B/KA1M0880B
10/17/01 0.0m 001
Stock#DSxxxxxxxx
2001 Fairchild Semiconductor Corporation
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Ordering Information
TU : Non Forming Type
YDTU : Forming type
Product Number Package Rating Fosc
KA1L0880B-TU TO-3P-5L 800V, 8A 50kHz
KA1L0880B-YDTU TO-3P-5L(Forming)
KA1M0880B-TU TO-3P-5L 800V, 8A 67kHz
KA1M0880B-YDTU TO-3P-5L(Forming)