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K4H510838M-TCA0 Datasheet(PDF) 47 Page - Samsung semiconductor |
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K4H510838M-TCA0 Datasheet(HTML) 47 Page - Samsung semiconductor |
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47 / 53 page  - 47 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM 11. IBIS: I/V Characteristics for Input and Output Buffers Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below) 11.1 Normal strength driver 1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a. 2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines the of the V-I curve of Figure a. 3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b. 4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figrue b. 5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source voltage from 0 to VDDQ/2 6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages from 0 to VDDQ/2 Maximum Typical High Minumum Vout(V) -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 0.0 0.5 1.0 1.5 2.0 2.5 Minimum Typical Low Typical High Maximum 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 Typical Low Vout(V) |
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