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K4H281638C-TCB0 Datasheet(PDF) 45 Page - Samsung semiconductor |
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K4H281638C-TCB0 Datasheet(HTML) 45 Page - Samsung semiconductor |
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45 / 53 page  - 45 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Table 14. AC timing parameters and specifications 1. Maximum burst refresh of 8 2. tHZQ transitions occurs in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving. 3. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown(DQS going from High_Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress, DQS could be High at this time, depending on tDQSS. 4. The maximum limit for this parameter is not a device limit. The device will operate with a great value for this parameter, but system performance (bus turnaround) will degrade accordingly. 5. The value of tQCSW min. is 1.25ns from the last low going data strobe edge to QFC high. And the value of tQCSW max. is 0.5tcK from the first high going clock edge after the last low going data strobe edge to QFC high. 6. the value of tQCSWI max. is 1.5tcK from the first high going clock edge after the last low going data strobe edge to QFC high. 7. A write command can be applied with tRCD satisfied after this command. Parameter Symbol -A2(PC266@CL=2) -B0(PC266@CL=2.5) -A0(PC200@CL=2) Unit Note Min Max Min Max Min Max Exit self refresh to bank active command tXSA 75 75 80 ns 7 Exit self refresh to read command tXSR 200 200 200 Cycle Refresh interval time 64Mb, 128Mb tREF 15.6 15.6 15.6 us 1 256Mb 7.8 7.8 7.8 us 1 Output DQS valid window tQH tHPmin -0.75ns - tHPmin -0.75ns - tHPmin -1.0ns - ns Clock half period tHP tCLmin or tCHmin - tCLmin or tCHmin - tCLmin or tCHmin - ns DQS write postamble time tWPST 0.25 0.25 0.25 tCK 4 QFC setup to first DQS edge on reads tQCS 0.9 1.1 0.9 1.1 0.9 1.1 tCK QFC hold after last DQS edge on reads tQCH 0.4 0.6 0.4 0.6 0.4 0.6 tCK Write command to QFC delay on write tQCSW 4.0 4.0 4.0 ns Write burst end to QFC delay on write tQCHW 1.25ns 0.5tCK 1.25ns 0.5tCK 1.25ns 0.5tCK 5 Write burst end to QFC delay on write interrupted by Precharge tQCHWI - 1.5tCK - 1.5tCK - 1.5tCK 6 |
Similar Part No. - K4H281638C-TCB0 |
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