Details, datasheet, quote on part number: K4D553238F-GC2A
| Part | K4D553238F-GC2A |
| Category | |
| Description | 256mbit GDDR Sdram |
| Company | Samsung Semiconductor, Inc. |
| Datasheet | Download K4D553238F-GC2A Datasheet |
| Ask AI | |
| Quote |
| Features, Applications |
x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL (144-Ball FBGA) Samsung Electronics reserves the right to change products or specification without notice.x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL FEATURES + 5% power supply for device operation + 5% power supply for I/O interface SSTL_2 compatible inputs/outputs 4 banks operation MRS cycle with address key programs Read latency 3, 4 (clock) Burst length (2, 4 and 8) Burst type (sequential & interleave) All inputs except data & DM are sampled at the positive going edge of the system clock Differential clock input No Wrtie-Interrupted by Read Function 4 DQS's 1DQS / Byte Data I/O transactions on both edges of Data strobe DLL aligns DQ and DQS transitions with Clock transition Edge aligned data & data strobe output Center aligned data & data strobe input DM for write masking only Auto & Self refresh 32ms refresh period (4K cycle) 144-Ball FBGA Maximum clock frequency to 350MHz Maximum data rate to 700Mbps/pin Part NO. K4D553238F-JC40 K4D553238F-JC50 Max Freq. 250MHz 200MHz Max Data Rate SSTL_2 144-Ball FBGA Interface Package K4D553238F-EC is the Lead Free package part number 2. For the K4D553238F-JC2A, VDD & VDDQ + 0.1VThe is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance to 2.8GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. |
| Related products with the same datasheet |
| K4D553235F-GC25 |
| K4D553235F-GC2A |
| K4D553235F-GC33 |
| K4D553238F |
| K4D553238F-GC |
| K4D553238F-GC33 |
| K4D553238F-GC36 |
| K4D553238F-JC |
| K4D553238F-JC2A |
| K4D553238F-JC33 |
| K4D553238F-JC36 |
| Some Part number from the same manufacture Samsung Semiconductor, Inc. |
| K4D553238F-GC33 256mbit GDDR Sdram |
| KFH2G1612M-DEB5 Flash Memory(54mhz) |
| DS_S5L1462B CD and DVD Playback |
| SLD63518XXX General Handling Precautions |
| KS8803 10/15 CH PLL |
| M485L1624FT0-CA2 DDR Sdram Sodimm |
| M368L5623MTN DDR Sdram Unbuffered Module |
| K6F1616R6C-FF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| KA2292D Am/fm Tuner + MPX |
| DS_S1T8515A01 Enhanced-1 CHIP CT0 RF IC |
| KA2913A Linear Integrated Circuit |
| KA9201Q RF AMP FOR CDP |
| INK-M40 Specifications: Printer Brand: Samsung SF-330, SF-331P, SF-335T, SF-340, SF-345T, SF-345TP ; Cartridge Original Type Number: INK-M40 ; Ink Color: - ; Consumable Type: Original |
| SE-S084D/TSBS |
| SE-S084D/TSLS |
| SE-S084D/TSRS |
| SE-S084D/TSSS |
| KLMDGAGE2A The eMMC architecture for embedded memory devices contains not only a data storage element (such as NAND flash memory), but also the controller for the storage element integrated on the same silicon die. |
|
K3P6C2000B-SC10 : 32M bit Description = K3P6C2000B 32M-Bit (2Mx16/1Mx32) CMOS Mask ROM ;; Organization = 2Mx16,1Mx32 ;; Voltage(V) = 5.0 ;; Speed(ns) = 100/30ns(Max.)@CL=100pF ;; Package = 70SSOP ;; Current (mA/uA) = 150/50 ;; Production Status = Mass Production ;; Comments = EOL(Mar.'03) K6R1008V1A-15 : Fast SRAM Description = K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ;; Organization = 128Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 12,15,20 ;; Operating Temperature = C,i ;; Operating Current(mA) = 140 ;; Standby Current(mA) = 5 ;; Package = 32SOJ,32TSOP2 ;; Production Status = Eol ;; Comm KMM5368103CKG : SIMM Description = KMM5368103CKG 8MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas, 4KB/2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx4)x16 ;; Production Status = Eol ;; Comments = Gold M372E1680BT0-C : Buffered DIMM Description = M372E1680BT0 16Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8K Refresh,5V ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Mode = Edo ;; Refresh = 8K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (16Mx4)x18+Drive ICx2 ;; Production Status = Eol ;; Comments = Buffered K4H1G1638D-TCA2 : 128mb DDR Sdram M378T3354BG(Z)0-CD5/CC : DDR2 Unbuffered Sdram Module 240pin Unbuffered Module Based on 512mb C-die 64/72-bit Non-ecc/ecc AT-SC-P-SM-06-B : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB KM681002CLT-1200 : 128K X 8 STANDARD SRAM, 12 ns, PDSO32 Specifications: Memory Category: SRAM Chip ; Density: 1049 kbits ; Number of Words: 128 k ; Bits per Word: 8 bits ; Package Type: SOJ, 0.400 INCH, PLASTIC, SOJ-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 12 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) KS57C5208Q-XX : 4-BIT, MROM, MICROCONTROLLER, PQFP64 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 1.5 MHz ; ROM Type: MROM ; Supply Voltage: 2.7 to 5.5 volts ; I/O Ports: 55 ; Package Type: QFP, Other, 14 X 20 MM, QFP-64 ; Operating Range: Industrial ; Pin Count: 64 ; Operating Temperature: -40 to 85 C (-40 to 185 F) KS57P21632Q-XX : 4-BIT, OTPROM, MICROCONTROLLER, PQFP100 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 1.5 MHz ; ROM Type: OTP ; Supply Voltage: 1.8 to 5.5 volts ; I/O Ports: 39 ; Package Type: QFP, Other, 14 X 20 MM, QFP-100 ; Operating Range: Industrial ; Pin Count: 100 ; Operating Temperature: -40 to 85 C (-40 to 185 F) |