Details, datasheet, quote on part number: K3N7C3000M
| Part | K3N7C3000M |
| Category | Memory => ROM => Mask ROM => Standard |
| Title | 64M bit |
| Description | Description = K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ;; Organization = 8Mx8,4Mx16 ;; Voltage(V) = 5.0 ;; Speed(ns) = 120 ;; Package = 42DIP,44SOP,44TSOP2 ;; Current (mA/uA) = 70 ;; Production Status = Eol ;; Comments = - |
| Company | Samsung Semiconductor, Inc. |
| Datasheet | Download K3N7C3000M Datasheet |
| Features, Applications |
| FEATURES x 8 bit organization Fast access time : 120ns(Max.) Supply voltage : single +5V Current consumption Operating : 70mA(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package : 42-DIP-600 The is a fully static mask programmable ROM organized x 8 bit. It is fabricated using silicongate CMOS process technology. This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor and data memory, character generator. The K3N7C3000M-DC is packaged a 42-DIP. Pin Function Address Inputs Data Outputs Output Enable Power (+5V) Ground No ConnectionItem Voltage on Any Pin Relative to VSS Temperature Under Bias Storage Temperature Symbol VIN TBIAS TStg Rating NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Item Supply Voltage Supply Voltage Symbol VCC VSS Min 4.5 0 Typ 5.0 0 Max 5.5 0 Unit VParameter Operating Current Input Leakage Current Output Leakage Current Input High Voltage, All Inputs Input Low Voltage, All Inputs Output High Voltage Level Output Low Voltage Level Symbol ICC ILI ILO VIH VIL VOH VOL IOH=-400�A IOL=2.1mA Test Conditions OE=VIL, all outputs open VIN=0 to VCC V CC Min -0.3 2.4 Max 0.8 0.4 Unit mA �A NOTE : Minimum DC Voltage(V IL) -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage on input pins(VIH) is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. H L Mode Operating Data High-Z Dout Power ActiveItem Output Capacitance Input Capacitance Symbol COUT CIN Test Conditions VOUT=0V VIN=0V Min Max 12 Unit pF Item Input Pulse Levels Input Rise and Fall Times Input and Output timing Levels Output Loads ValueItem Read Cycle Time Address Access Time Output Enable Access Time Output Disable to Output High-Z Output Hold from Address Change Symbol tRC tAA tOE tDF tOH 0 K3N7C3000M-DC12 Min Max K3N7C3000M-DC15 Min Max Unit ns NOTE : tDF is defined as the time at which the outputs achieve the open circuit condition and is not referenced to VOH or VOL level. |
| Related products with the same datasheet |
| K3N7C3000M-DC |
| K3N7C3000M-DC12 |
| K3N7C3000M-DC15 |
| Some Part number from the same manufacture Samsung Semiconductor, Inc. |
| K3N7C3000M-DC Description = K3N7C3000M 64M-Bit (8M X 8) CMOS Mask ROM ;; Organization = 8Mx8,4Mx16 ;; Voltage(V) = 5.0 ;; Speed(ns) = 120 ;; Package = 42DIP,44SOP,44TSOP2 ;; Current (mA/uA) = 70 ;; Production Status |
| K3N7C4000B Description = K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ;; Organization = 4Mx16 ;; Voltage(V) = 5.0 ;; Speed(ns) = 100 ;; Package = 42DIP ;; Current (mA/uA) = 70 ;; Production Status = Mass Production |
| K3N7C4000C Description = K3N7C4000C 64M-Bit (4M X 16) CMOS Mask ROM ;; Organization = 4Mx16 ;; Voltage(V) = 5.0 ;; Speed(ns) = 100(50pF) ;; Package = 42DIP ;; Current (mA/uA) = 35,40/30 ;; Production Status = Eol ;; Comments |
| K3N7C4000M Description = K3N7C4000M 64M-Bit (4M X 16) CMOS Mask ROM ;; Organization = 4Mx16 ;; Voltage(V) = 5.0 ;; Speed(ns) = 120 ;; Package = 42DIP ;; Current (mA/uA) = 70 ;; Production Status = Eol ;; Comments |
| K3N7U1000A Description = K3N7U1000A 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8,4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120,100 ;; Package = 44SOP,48TSOP1 ;; Current (mA/uA) = 35,40/30 ;; Production |
| K3N7U1000B Description = K3N7U1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8,4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package = 44SOP,44TSOP2,48TSOP1 ;; Current (mA/uA) = 35,40/30 ;; Production |
| K3N7U1000C Description = K3N7U1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8/4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package = 44SOP,48TSOP1 ;; Current (mA/uA) = 35,40/30 ;; Production |
| K3N7U4000B Description = K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM ;; Organization = 4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package = 42DIP ;; Current (mA/uA) = 40 ;; Production Status = Mass Production |
| K3N7U4000C Description = K3N7U4000C 64M-Bit (4M X 16) CMOS Mask ROM ;; Organization = 4Mx16 ;; Voltage(V) = 3.0 ;; Speed(ns) = 120 ;; Package = 42DIP ;; Current (mA/uA) = 35,40/30 ;; Production Status = Eol ;; Comments |
| K3N7V1000A Description = K3N7V1000A 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8,4Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 120,100 ;; Package = 44SOP,48TSOP1 ;; Current (mA/uA) = 35,40/30 ;; Production |
| K3N7V1000B Description = K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8,4Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100 ;; Package = 44SOP,44TSOP2,48TSOP1 ;; Current (mA/uA) = 35,40/30 ;; Production |
| K3N7V1000C Description = K3N7V1000C 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8/4Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100(50pF) ;; Package = 44SOP,48TSOP1 ;; Current (mA/uA) = 35,40/30 ;; Production |
| K3N7V4000B Description = K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM ;; Organization = 4Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100 ;; Package = 42DIP ;; Current (mA/uA) = 35,40/30 ;; Production Status = Mass Production |
| K3N7V4000C Description = K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM ;; Organization = 4Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100(50pF) ;; Package = 42DIP ;; Current (mA/uA) = 35,40/30 ;; Production Status = Eol ;; Comments |
| K3N7VU1000A-GC 64m-bit (8mx8 /4mx16) CMOS Mask ROM |
| K3N7VU1000A-YC |
| K3N7VU1000B-GC |
| K3N7VU1000B-YC 64m-bit (8mx8 /4mx16) CMOS Mask ROM |
| K3N7VU4000B-DC |
| K3N7VU4000B-DC 64m-bit (4mx16) CMOS Mask ROM |
| K3N9U1000A Description = K3N9U1000A 128M-Bit (16Mx8 / 8Mx16) CMOS Mask ROM ;; Organization = 16Mx8,8Mx16 ;; Voltage(V) = - ;; Speed(ns) = 120 ;; Package = 48TSOP1 ;; Current (mA/uA) = 50,60/30 ;; Production Status |
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KMM332F410CS : Buffered DIMM Description = KMM332F410CS 4Mx32 DRAM Sodimm Using 4MX4,4K&2K Ref.,3.3V,Low Power/self-refresh ;; Density(MB) = - ;; Organization = 4Mx32 ;; Mode = Edo ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx4)x8 ;; Production Status = Eol ;; Comments = - M390S3320ET1 : Registered DIMM Description = M390S3320ET1 16M X 72 Sdram Dimm With PLL & Register Based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs ;; Density(MB) = 256 ;; Organization = 32Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 7A ;; #of Pin = 168 ;; Power = C ;; Component Composition = (32Mx4)x18 KFG1216Q2A-FED5 : Flash Memory SLD-65038941X : General Handling Precautions AT-ST-P-M6-08-C : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB AT-ST-U-SM-01-C : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB K4B4G0446B-HYH9 : DDR DRAM Specifications: Memory Category: DRAM Chip K4H511638J-BCB3T : 32M X 16 DDR DRAM, 0.65 ns, PDSO66 Specifications: Memory Category: DRAM Chip ; Density: 536871 kbits ; Number of Words: 32000 k ; Bits per Word: 16 bits ; Package Type: TSOP, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 ; Pins: 66 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 0.6500 ns K4T56163QN-HCE6T : IC,SDRAM,DDR,4X4MX16,CMOS,BGA,84PIN,PLASTIC Specifications: Memory Category: DRAM Chip |
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