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Access times 70, 100 ns CMOS Low power operation: ICC1=10mA (typical)* operation ISB2=1�A (typical)* standby * Typical values are measured 8V, TA=25�C Low data retention voltage: 1.0V (min.) Output Enable (OE) and Chip Enable (CE) inputs for ease in applications TTL compatible inputs and outputs Fully static operation: No clock or refresh reguired Single 1.65V-2.2V power supply Available in the 8*13.4mm TSOP-1 and 48pin 6*8mm TF-BGA

524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSI's low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Additionally, easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable ( WE) controls both writing and reading of the memory. The IC62VV5128L and IC62VV5128LL are available 8*13.4mm TSOP-1 and 48-pin 6*8mm TFBGA.

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. � Copyright 2000, Integrated Circuit Solution Inc.

I/O0-I/O7 NC Vcc GND Address Inputs Chip Enable Input Output Enable Input Write Enable Input Data Input/Output No Connection Power Ground

Mode Not Selected Output Disabled Read Write CE OE I/O Operation High-Z DOUT DIN Vcc Current ISB1, ISB2 ICC