High-speed access time: 12, 15, and 20 ns CMOS low power operation 1650 mW (max) @ -10ns Cycle 55 �W (max) CMOS Standby TTL compatible interface levels Single � 10% power supply Fully static operation: no clock or refresh required Three state outputs Industrial temperature available Available in 44-pin SOJ package and 44-pin TSOP (Type II)

RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast 10 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C6416 is packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II).

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. � Copyright 1999, Integrated Silicon Solution, Inc.

A0-A15 I/O0-I/O15 Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input

Symbol VTERM TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value 1.5 20 Unit W mA

Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND VIN VCC GND VOUT VCC, Outputs Disabled Test Conditions VCC = Min., IOH �4.0 mA IOH �100 �A VCC = Min., IOL 8.0 mA Min. Max. 3.95 0.4 VCC Unit �A

Symbol ICC ISB1 Parameter Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., IOUT = 0 mA, f = MAX VCC = Max., VIN = VIH or VIL CE VIH f = max Com. Ind. Com. Ind. Com. Ind. -10 Min. Max. Min. Max. Min. Max. Min. Max. Unit mA

Note: f = fMAX, address and data inputs are cycling at the maximum frequency, = 0 means no input lines change.