HUF76629D3(S) Datasheet by onsemi

Datasheet Feedback/Errors

FAIRCHILD SEMICONDUCTOR” mar " C W: W

HUF76629D3, HUF76629D3S

20A, 100V, 0.054 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFET

Packaging

Symbol

Features

• Ultra Low On-Resistance

-r

DS(ON) = 0.052Ω, VGS = 10V

-r

DS(ON) = 0.054Ω, VGS = 5V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electriecal Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs RGS Curves

Ordering Information

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

JEDEC TO-251AA JEDEC TO-252AA

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

HUF76629D3

GATE

SOURCE

DRAIN

(FLANGE

)

HUF76629D3S

PART NUMBER PACKAGE BRAND

HUF76629D3 TO-251AA 76629D

HUF76629D3S TO-252AA 76629D

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUF76629D3ST.

HUF76629D3, HUF76629D3S UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 100 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±16 V

Drain Current

Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110

0.74 W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

NOTES:

1. TJ = 25oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet December 2001

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 100 - - V

ID = 250µA, VGS = 0V , TC = -40oC (Figure 12) 90 - - V

Zero Gate Voltage Drain Current IDSS VDS = 95V, VGS = 0V - - 1 µA

VDS = 90V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V

Drain to Source On Resistance rDS(ON) ID = 20A, VGS = 10V (Figures 9, 10) - 0.0415 0.052 Ω

ID = 20A, VGS = 5V (Figure 9) - 0.046 0.054 Ω

ID = 20A, VGS = 4.5V (Figure 9) - 0.047 0.055 Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case RθJC TO-251AA and TO-252AA - - 1.36 oC/W

Thermal Resistance Junction to

Ambient RθJA - - 100 oC/W

SWITCHING SPECIFICATIONS (VGS = 4.5V)

Turn-On Time tON VDD = 50V, ID = 20A

VGS = 4.5V, RGS = 6.8Ω

(Figures 15, 21, 22)

- - 190 ns

Turn-On Delay Time td(ON) -11-ns

Rise Time tr- 114 - ns

Turn-Off Delay Time td(OFF) -38-ns

Fall Time tf-60-ns

Turn-Off Time tOFF - - 145 ns

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time tON VDD = 50V, ID = 20A

VGS = 10V,RGS = 8.2Ω

(Figures 16, 21, 22)

- - 50 ns

Turn-On Delay Time td(ON) -6.8-ns

Rise Time tr-28-ns

Turn-Off Delay Time td(OFF) -67-ns

Fall Time tf-60-ns

Turn-Off Time tOFF - - 190 ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 50V,

ID = 20A,

Ig(REF) = 1.0mA

(Figures 14, 19, 20)

-3846nC

Gate Charge at 5V Qg(5) VGS = 0V to 5V - 21 25 nC

Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 1.2 1.6 nC

Gate to Source Gate Charge Qgs -3.3-nC

Gate to Drain "Miller" Charge Qgd -10-nC

CAPACITANCE SPECIFICATIONS

Input Capacitance CISS VDS = 25V, VGS = 0V,

f = 1MHz

(Figure 13)

- 1285 - pF

Output Capacitance COSS - 270 - pF

Reverse Transfer Capacitance CRSS -65-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage VSD ISD = 20A - - 1.25 V

ISD = 10A - - 1.00 V

Reverse Recovery Time trr ISD = 20A, dISD/dt = 100A/µs - - 110 ns

Reverse Recovered Charge QRR ISD = 20A, dISD/dt = 100A/µs - - 370 nC

HUF76629D3, HUF76629D3S

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

FIGURE 4. PEAK CURRENT CAPABILITY

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

00 25 50 75 100 17

0.2

0.4

0.6

0.8

1.0

1.2

125 150

50 75 100 125 150

025

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

VGS = 4.5V

VGS = 10V

0.1

10-4 10-3 10-2 10-1 100101

0.01

10-5

t, RECTANGULAR PULSE DURATION (s)

ZθJC, NORMALIZED

THERMAL IMPEDANCE

SINGLE PULSE NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

PDM

t1t2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.01

0.02

100

600

10-4 10-3 10-2 10-1 100101

10-5

IDM, PEAK CURRENT (A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

TC = 25oC

I = I25 175 - TC

150

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 5V

VGS = 10V

HUF76629D3, HUF76629D3S

/// ////

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves (Continued)

100

10 30

300

100µs

10ms

1ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

TC = 25oC

TJ = MAX RATED

SINGLE PULSE

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

100

0.001 0.01 0.1

IAS, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

STARTING TJ = 150oC

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

1.522.533.5 4.

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

TJ= 25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

TJ= 175oC

TJ= -55oC

0123

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 3V

VGS = 3.5V

VGS = 5V

VGS = 10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

TC = 25oC

VGS = 4V

ID = 10A

24681

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 20A

rDS(ON), DRAIN TO SOURCE

ON RESISTANCE (mΩ)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

TC = 25oC

0.5

1.0

1.5

2.0

3.0

-80 -40 0 40 80 120 20

NORMALIZED DRAIN TO SOURCE

TJ, JUNCTION TEMPERATURE (oC)

ON RESISTANCE

VGS = 10V, ID = 20A

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

160

2.5

HUF76629D3, HUF76629D3S

FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.

FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT

GATE CURRENT

FIGURE 15. SWITCHING TIME vs GATE RESISTANCE FIGURE 16. SWITCHING TIME vs GATE RESISTANCE

Typical Performance Curves (Continued)

0.4

0.8

1.0

1.4

-80 -40 0 40 80 120 200

NORMALIZED GATE

TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

THRESHOLD VOLTAGE

0.6

160

1.2

0.9

1.0

1.1

1.2

-80 -40 0 40 80 120 200

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

ID = 250µA

160160

100

1000

3000

0.1 1.0 10 10

C, CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

CISS = CGS + CGD

COSS ≅ CDS + CGD

CRSS = CGD

01020304

VGS, GATE TO SOURCE VOLTAGE (V)

VDD = 50V

Qg, GATE CHARGE (nC)

ID = 20A

ID = 10A

WAVEFORMS IN

DESCENDING ORDER:

100

250

0 1020304050

SWITCHING TIME (ns)

RGS, GATE TO SOURCE RESISTANCE (Ω)

VGS = 4.5V, VDD = 50V, ID = 20A

td(ON)

td(OFF)

150

200

100

200

300

0 1020304050

SWITCHING TIME (ns)

RGS, GATE TO SOURCE RESISTANCE (Ω)

VGS = 10V, VDD = 50V, ID = 20A

td(OFF)

td(ON)

150

250

HUF76629D3, HUF76629D3S

(0 TI |

Test Circuits and Waveforms

FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 18. UNCLAMPED ENERGY WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

FIGURE 21. SWITCHING TIME TEST CIRCUIT FIGURE 22. SWITCHING TIME WAVEFORM

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS +

VDS

VDD

DUT

Ig(REF)

VDD

Qg(TH)

VGS = 1V

Qg(5)

VGS = 5V

Qg(TOT)

VGS = 10

VDS

VGS

g(REF)

Qgs Qgd

VGS

RGS

DUT

-VDD

VDS

VGS

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

HUF76629D3, HUF76629D3S

1E| . rm @lT

PSPICE Electrical Model

.SUBCKT HUF76629D3 2 1 3 ; rev 30 July 1999

CA 12 8 2.32e-9

CB 15 14 2.32e-9

CIN 6 8 1.22e-9

DBODY 7 5 DBODYMOD

DBREAK 5 11 DBREAKMOD

DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 117.89

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 6 10 6 8 1

EVTHRES 6 21 19 8 1

EVTEMP 20 6 18 22 1

IT 8 17 1

LDRAIN 2 5 1e-9

LGATE 1 9 3.11e-9

LSOURCE 3 7 3.72e-9

MMED 16 6 8 8 MMEDMOD

MSTRO 16 6 8 8 MSTROMOD

MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1

RDRAIN 50 16 RDRAINMOD 2.97e-2

RGATE 9 20 2.81

RLDRAIN 2 5 10

RLGATE 1 9 54.2

RLSOURCE 3 7 41.6

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

RSOURCE 8 7 RSOURCEMOD 6.5e-3

RVTHRES 22 8 RVTHRESMOD 1

RVTEMP 18 19 RVTEMPMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*61),3))}

.MODEL DBODYMOD D (IS = 1.15e-12 IKF = 4.3 RS = 7.45e-3 TRS1 = 2.40e-3 TRS2 = 5.15e-7 CJO = 1.14e-9 TT = 5.86e-8 M = 0.52 XTI = 3.65)

.MODEL DBREAKMOD D (RS = 3.78e- 1TRS1 = 1e- 3TRS2 = -1e-6)

.MODEL DPLCAPMOD D (CJO = 1.37e- 9IS = 1e-3 0N = 10 M = 0.94)

.MODEL MMEDMOD NMOS (VTO = 1.84 KP = 2.6 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.81)

.MODEL MSTROMOD NMOS (VTO = 2.13 KP = 42.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)

.MODEL MWEAKMOD NMOS (VTO = 1.58 KP = 0.07 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 28.1 RS = 0.1)

.MODEL RBREAKMOD RES (TC1 = 9.88e- 4TC2 = -5.40e-7)

.MODEL RDRAINMOD RES (TC1 = 7.85e-3 TC2 = 1.95e-5)

.MODEL RSLCMOD RES (TC1 = 4.97e-3 TC2 = 5.05e-6)

.MODEL RSOURCEMOD RES (TC1 = 1.5e-3 TC2 = 1e-6)

.MODEL RVTHRESMOD RES (TC1 = -1.85e-3 TC2 = -4.48e-6)

.MODEL RVTEMPMOD RES (TC1 = -1.72e- 3TC2 = 6.00e-7)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.5 VOFF= -2.2)

.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF= -5.5)

.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.1 VOFF= 0.5)

.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.1)

.ENDS

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

HUF76629D3, HUF76629D3S

gw| w PM VII—I @lT

SABER Electrical Model

REV 30 July 1999

template huf76629d3 n2,n1,n3

electrical n2,n1,n3

{

var i iscl

d..model dbodymod = (is = 1.15e-12, cjo = 1.14e-9, tt = 5.86e-8, xti = 3.65, m = 0.52)

d..model dbreakmod = ()

d..model dplcapmod = (cjo = 1.37e-9, is = 1e-30, n = 10, m = 0.94)

m..model mmedmod = (type=_n, vto = 1.84, kp = 2.6, is = 1e-30, tox = 1)

m..model mstrongmod = (type=_n, vto = 2.13, kp = 42.5, is = 1e-30, tox = 1)

m..model mweakmod = (type=_n, vto = 1.58, kp = 0.07, is = 1e-30, tox = 1)

sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5.5, voff = -2.2)

sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2.2, voff = -5.5)

sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.1, voff = 0.5)

sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.1)

c.ca n12 n8 = 2.32e-9

c.cb n15 n14 = 2.32e-9

c.cin n6 n8 = 1.22e-9

d.dbody n7 n71 = model=dbodymod

d.dbreak n72 n11 = model=dbreakmod

d.dplcap n10 n5 = model=dplcapmod

i.it n8 n17 = 1

l.ldrain n2 n5 = 1e-9

l.lgate n1 n9 = 3.11e-9

l.lsource n3 n7 = 3.72e-9

m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u

m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u

m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u

res.rbreak n17 n18 = 1, tc1 = 9.88e-4, tc2 = -5.40e-7

res.rdbody n71 n5 = 7.45e-3, tc1 = 2.40e-3, tc2 = 5.15e-7

res.rdbreak n72 n5 = 3.78e-1, tc1 = 1.00e-3, tc2 = -1.00e-6

res.rdrain n50 n16 = 2.97e-2, tc1 = 7.85e-3, tc2 = 1.95e-5

res.rgate n9 n20 = 2.81

res.rldrain n2 n5 = 10

res.rlgate n1 n9 = 54.2

res.rlsource n3 n7 = 41.6

res.rslc1 n5 n51 = 1e-6, tc1 = 4.97e-3, tc2 = 5.05e-6

res.rslc2 n5 n50 = 1e3

res.rsource n8 n7 = 6.5e-3, tc1 = 1.5e-3, tc2 = 1e-6

res.rvtemp n18 n19 = 1, tc1 = -1.72e-3, tc2 = 6.00e-7

res.rvthres n22 n8 = 1, tc1 = -1.85e-3, tc2 = -4.48e-6

spe.ebreak n11 n7 n17 n18 = 117.89

spe.eds n14 n8 n5 n8 = 1

spe.egs n13 n8 n6 n8 = 1

spe.esg n6 n10 n6 n8 = 1

spe.evtemp n20 n6 n18 n22 = 1

spe.evthres n6 n21 n19 n8 = 1

sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod

sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod

sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod

sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc=1

equations {

i (n51->n50) +=iscl

iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/61))** 3))

}

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ISCL

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

RDBODY

RDBREAK

HUF76629D3, HUF76629D3S

SPICE Thermal Model

REV 26 July 1999

HUF76629D3

CTHERM1 th 6 2.45e-3

CTHERM2 6 5 8.15e-3

CTHERM3 5 4 7.40e-3

CTHERM4 4 3 7.45e-3

CTHERM5 3 2 1.01e-2

CTHERM6 2 tl 7.49e-2

RTHERM1 th 6 9.00e-3

RTHERM2 6 5 1.80e-2

RTHERM3 5 4 9.15e-2

RTHERM4 4 3 2.43e-1

RTHERM5 3 2 3.50e-1

RTHERM6 2 tl 3.62e-1

SABER Thermal Model

SABER thermal model HUF76629D3

template thermal_model th tl

thermal_c th, tl

{

ctherm.ctherm1 th 6 = 2.45e-3

ctherm.ctherm2 6 5 = 8.15e-3

ctherm.ctherm3 5 4 = 7.40e-3

ctherm.ctherm4 4 3 = 7.45e-3

ctherm.ctherm5 3 2 = 1.01e-2

ctherm.ctherm6 2 tl = 7.49e-2

rtherm.rtherm1 th 6 = 9.00e-3

rtherm.rtherm2 6 5 = 1.80e-2

rtherm.rtherm3 5 4 = 9.15e-2

rtherm.rtherm4 4 3 = 2.43e-1

rtherm.rtherm5 3 2 = 3.50e-1

rtherm.rtherm6 2 tl = 3.62e-1

}

RTHERM4

RTHERM6

RTHERM5

RTHERM3

RTHERM2

RTHERM1

CTHERM4

CTHERM6

CTHERM5

CTHERM3

CTHERM2

CTHERM1

th JUNCTION

CASE

HUF76629D3, HUF76629D3S

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OPTOLOGIC™

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PACMAN™

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

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SyncFET™

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

STAR*POWER is used under license

VCX™

HUF76629D3(S) Datasheet by onsemi

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