E1761-01 :

G7871-02 :

G8373-01 :

P4249-08 : Photoconductive and Photovoltaic Cells

S7030SERIES : Si-based Photodiodes

L8628 : Transmitter/receiver Photo IC for Optical link

H8711-01 : Multianode Photomultiplier TUBE Assembly

S8910-01 : PIN PHOTO DIODE Specifications: Photodiode Type: PIN Photodiode ; Peak Sensitivity Wavelength: 760 nm (7600 Å) ; Operating Temperature: -25 to 85 C (-13 to 185 F) ; Dark Current: 0.3000 nA ; Photodiode Package: 4 X 5 MM, 1.70 MM HEIGHT, MINIATURE, CC-2

2SD2114K : . z 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / 20mA) zExternal dimensions (Units : mm) zStructure Epitaxial planar type NPN silicon transistor Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power.

2SJ522 : . Any and all SANYO products described or contained herein do not have s that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative.

BZV85 : BZV85 Series; Voltage Regulator Diodes. Total power dissipation: max. 1.3 W Tolerance series: approx. �5% Working voltage range: nom. V (E24 range) Non-repetitive peak reverse power dissipation: max. 60 W. APPLICATIONS Stabilization purposes. Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx.

IXFK180N07 : 70V HiperFET Power MOSFET. Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions to 150�C; RGS 1 M Continuous Transient = 25�C (MOSFET chip capability) External lead (current limit) = 25�C, Note 25�C IS IDM, di/dt 100 A/�s, VDD VDSS = 25�C z International.

STA315A : Power Transistor Array. Symbol VCBO VCEO VEBO PT Tj Tstg Ratings (pulse to +150 Unit W �C Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 25mA VCE = 5mA IFEC = 2A Ratings 2.5max 50min .

05002-470BMZP : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.000047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 4.70E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

DLH1-14-0.6-500/A : 1 ELEMENT, 500 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: FLAT ; Application: General Purpose, DC-DC CONVERTER ; Inductance Range: 500 microH ; Inductance Tolerance: 15 (+/- %) ; DCR: 0.7500 ohms ; Rated DC Current: 600 milliamps ; SRF: 1.6 MHz ; Operating Temperature: -40 to 125 C (-40 to 257 F).

KTB1366O : 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB. s: Polarity: PNP ; Package Type: TO-220, TO-220IS, 3 PIN.

KTC4074F-GR : 150 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: TFSM, 3 PIN.

LR4-260S : RESISTOR, TEMPERATURE DEPENDENT, PTC, 0.031 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), Axial Leads, AXIAL LEADED ; Resistance Range: 0.0310 ohms ; Power Rating: 1 watts (0.0013 HP) ; Operating Temperature: -40 to 85 C (-40 to 185 F).

PW3216-100KB : IND,NON-SPECIFIED,10UH,10% +TOL,10% -TOL,1206 CASE. s: Application: General Purpose.

SI8439DB-T1-E1 : SMALL SIGNAL, FET. TrenchFET� Power MOSFET: 1.2 V Rated Ultra-Small 1.6 mm Maximum Outline Ultra-Thin 0.6 mm Maximum Height Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Low Threshold Load Switch for Portable Devices - Low Power Consumption - Increased Battery Life Ultra Low Voltage Load Switch Device Marking:.

SKM100GAL12T4 : IGBT. s: Transistor Type / Technology: IGBT. IGBT VCES IC ICnom ICRM = 3xICnom VCC 800 V VGE 15 V VCES 1200 V VGES tpsc Tj Inverse diode 80 �C IFRM = 10 ms, sin 91 100 IFRM = 10 ms, sin 25 �C Tterminal = Tterminal �C AC sinus = 1 min �C V VCE(sat) with positive temperature coefficient High short circuit capability, self limiting 6 x Icnom Fast & soft inverse CAL diodes Large clearance (10 mm) and creepage.

2N6766T1 : 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.0650 ohms ; Package Type: TO-254AA, 3 PIN ; Number of units in IC: 1.