840Z18A : Synchronous NBT SRAMs, 4Meg, 256K X 18,2.5 V And 3.3 V

GS816037T-150I : Sychronous Burst

GS8322Z18C-166 : No Bus Turnaround

GS816018BGT-200IV : 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst Srams

GS8170LW72GC-300I : 1M X 18 STANDARD SRAM, 2.1 ns, PBGA209 Specifications: Memory Category: SRAM Chip ; Density: 18874 kbits ; Number of Words: 1000 k ; Bits per Word: 18 bits ; Package Type: BGA, 14 X 22 MM, 1 MM PITCH, BGA-209 ; Pins: 209 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 2.1 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F)

GS8182Q18BD-200IT : 2M X 8 DDR SRAM, 0.5 ns, PBGA165 Specifications: Memory Category: SRAM Chip ; Density: 16777 kbits ; Number of Words: 2000 k ; Bits per Word: 8 bits ; Package Type: 13 X 15 MM, 1 MM PITCH, FPBGA-165 ; Pins: 165 ; Supply Voltage: 1.8V ; Access Time: 0.5000 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

GS832036GT-150IV : CACHE SRAM, PQFP100 Specifications: Memory Category: SRAM Chip ; Package Type: TQFP, ROHS COMPLIANT, TQFP-100 ; Pins: 100

GS8320ZV36GT-150 : ZBT SRAM, PQFP100 Specifications: Memory Category: SRAM Chip ; Package Type: TQFP, ROHS COMPLIANT, TQFP-100 ; Pins: 100

GS8321Z32AGD-250 : ZBT SRAM, PBGA165 Specifications: Memory Category: SRAM Chip ; Package Type: FPBGA-165 ; Pins: 165

GS8642Z72C-300 : 4M X 18 ZBT SRAM, 8 ns, PBGA119 Specifications: Memory Category: SRAM Chip ; Density: 75497 kbits ; Number of Words: 4000 k ; Bits per Word: 18 bits ; Package Type: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 ; Pins: 119 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 8 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F)

GS864436GE-225IV : 2M X 36 CACHE SRAM, 8.5 ns, PBGA119 Specifications: Memory Category: SRAM Chip ; Density: 75497 kbits ; Number of Words: 2000 k ; Bits per Word: 36 bits ; Package Type: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 ; Pins: 119 ; Supply Voltage: 2.5V ; Access Time: 8.5 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F)

72103 : 2K X 9 Configurable Parallel-to-serial Fifo, 5.0V. 35ns parallel port access time, 45ns cycle time 50MHz serial input/output frequency Serial-to-parallel, parallel-to-serial, serial-to-serial, and parallel-to-parallel operations Expandable in both depth and width with no external components FlexishiftTM Sets programmable serial word width from 4 bits to any width with no external components Multiple.

AT27BV010 : ->UV/EPROM. 1-mb (128kx8) Unregulated Battery-voltage(tm) OTP EPROM.

IBM0418A41MLAB : . x 18 organizations x 18 organizations 0.25 Micron CMOS technology Synchronous Pipeline Mode of Operation with Self-Timed Late Write Differential Clocks +3.3V Power Supply, Ground, 2.0V VDDQ 2.0V LVTTL Input and Output levels Registered Addresses, Write Enables, Synchronous Select, and Data Ins Registered Outputs 40 Ohm Drivers Common I/O Asynchronous.

IDT5962-3829406MXA : 8K X 8 Static RAM. High-speed address/chip select access time � Military: 20/25/35/45/55/70/85/100ns (max.) � Industrial: 25/35ns (max.) � Commercial: 15/20/25/35ns (max.) Low power consumption Battery backup operation � 2V data retention voltage (L Version only) Produced with advanced CMOS high-performance technology Inputs and outputs directly TTL-compatible Three-state.

IDT723673 : CMOS Syncfifo(tm) With Bus-matching : 8,192x36. Memory storage capacity: x 36 Clock frequencies to 83 MHz (8 ns access time) Clocked FIFO buffering data from Port A to Port B IDT Standard timing (using EF and FF) or First Word Fall Through Timing (using OR and IR flag functions) Programmable Almost-Empty and Almost-Full flags; each has five default offsets and 1,024) Serial or parallel programming.

IS61LV12816 : 128Kx16 High-speed CMOS Static RAM With 3.3V Supply. High-speed access time: 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single � 10% power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available The ISSI is a high-speed, 2,097,152-bit static RAM organized as 131,072.

K4D263238F : ->Graphics Memory. = K4D263238F For 1M X 32Bit X 4 Bank DDR Sdram ;; Organization = 4Mx32 ;; Vdd/Vddq(V) = 2.5/2.5 ;; Speed(ns) = 4.0,5.0 ;; Refresh = 4K/32ms ;; Package = 100TQFP ;; Interface = SSTL_2 ;; Production Status = Mass Production ;; Comments = -.

K7A163601M : SB & SPB. = K7A163601M 512K X 36 & 1M X 18-Bit Synchronous Pipelined Burst SRAM ;; Organization = 512Kx36 ;; Operating Mode = SPB ;; VDD(V) = 3.3 ;; Access Time-tCD(ns) = 3.8,4.0,4.5 ;; Speed-tcyc (MHz) = 150,138 ;; I/o Voltage(V) = 2.5,3.3 ;; Package = 100TQFP ;; Production Status = Eol ;; Comments = 2E2D.

M366S0824DT0 : Unbuffered DIMM. = M366S0824DT0 8M X 64 Sdram Dimm Based on 4M X 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 64 ;; Organization = 8Mx64 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 80,1H,1L ;; #of Pin = 168 ;; Power = C ;; Component Composition = (4Mx16)x8+EEPROM ;; Production Status = Eol ;; Comments = PC100.

M377S3320CT3 : Registered DIMM. = M377S3320CT3 32MBx72 Sdram Dimm With PLL & Register Based on 32MBx4, 4Banks, 4KB Ref., 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 256 ;; Organization = 32Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 1H,1L ;; #of Pin = 168 ;; Power = C ;; Component Composition = (32Mx4)x18+Drive ICx3+PLL+EEPROM ;; Production.

MDT10P22 : 20/22/24 Pins, ROM / 1K RAM / 73BYTES More With MDT2010. This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 1K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref (not for 18 pin package) are also provided. u XTAL��Standard crystal oscillator HFXT��High frequency.

X25057 : 4k Spi Serial EePROM (512 X 8), 5mhz. 5MHz Low Power SPI Serial EEPROM with IDLockTM Memory 5MHz clock rate IDLock memory --IDLock first or last page, any 1/4 or lower 1/2 of EEPROM array Low power CMOS --<1�A standby current --<3mA active current during write --<400�A active current during read 2.7V-5.5V operation Built-in inadvertent write protection --Power-up/power-down protection.

X25324 : Programmable Watchdog Timer W/serial E2 Prom. Programmable Watchdog Timer with Reset Assertion --Reset Signal Valid to Vcc=1V --Power Up Reset Control Save Critical Data With Block LockTM Protection --Block LockTM Protect 1/2 or all of Serial E2PROM Memory Array In Circuit Programmable ROM Mode Long Battery Life With Low Power Consumption --<50�A Max Standby Current, Watchdog On --<1�A Max Standby.

�PD464518AL : . 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM BY 36-BIT LVTTL INTERFACE/REGISTER-LATCH/LATE WRITE The a 262,144 words by 18 bits, and the a 131,072 words by 36 bits synchronous static RAM fabricated with advanced Bi-CMOS technology using N-channel memory cell. This technology and unique peripheral circuits make the �PD464518AL and �PD464536AL a high-speed.

CAT13008 : The CAT13008 (see table below) is a memory and supervisory solution for microcontroller based systems. A CMOS serial EEPROM memory and a system power supervisor with brown-out protection are integrated together. Memory interface is via Microwire serial protocol. The CAT13008 provides a precision VCC sense circuit with two reset output options: CMOS.

FM25L04B-DGTR : SPECIALTY MEMORY CIRCUIT, PDSO8. s: Density: 4 kbits ; Number of Words: 512 k ; Bits per Word: 8 bits ; Package Type: 4 X 4.50 MM, 0.95 MM PITCH, GREEN, TDFN-8 ; Pins: 8 ; Supply Voltage: 3.3V ; Operating Temperature: -40 to 85 C (-40 to 185 F).

IDT72V11071L15TFGI8 : 1K X 8 OTHER FIFO, 10 ns, PQFP64. s: Memory Category: FIFO ; Density: 8 kbits ; Number of Words: 1 k ; Bits per Word: 8 bits ; Package Type: TQFP, PLASTIC, TQFP-64 ; Pins: 64 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 10 ns ; Cycle Time: 15 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

PYA28C256-12CWM : EEPROM 5V. s: Memory Category: PROM, EEPROM.

S-24C32CH-J8T2U3 : 4K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8. s: Density: 33 kbits ; Number of Words: 4 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 0 MHz ; Supply Voltage: 5V ; Package Type: HALOGEN FREE AND LEAD FREE, SOP-8, SOP ; Pins: 8 ; Operating Range: Industrial ; Operating Temperature: -40 to 105 C (-40 to 221 F).

24AA256-E/ST14 : 32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14. s: Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 0 MHz ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Package Type: 4.40 MM, PLASTIC, MO-153, TSSOP-14, TSSOP ; Pins: 14 ; Operating Range: AUTOMOTIVE ; Operating Temperature:.