GS71116AJ-12I datasheet -

Details, datasheet, quote on part number: GS71116AJ-12I
PartGS71116AJ-12I
CategoryMemory => SRAM => Async. SRAM
Description
CompanyGSI Technology
DatasheetDownload GS71116AJ-12I Datasheet
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Features, Applications
GS71116ATP/J/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features

Fast access time: ns CMOS low power operation: mA at minimum cycle time Single 3.3 V power supply All inputs and outputs are TTL-compatible Byte control Fully static operation Industrial Temperature Option: to 85�C Package line J: 400 mil, 44-pin SOJ package TP: 400 mil, 44-pin TSOP Type II package 8 mm Fine Pitch Ball Grid Array package

Description

The is a high speed CMOS static RAM organized by 16-bits. Static design eliminates the need for external clocks or timing strobes. Operating on a single 3.3 V power supply and all inputs and outputs are TTLcompatible. The GS71116A is available 8 mm Fine Pitch BGA package, as well in 400 mil SOJ and 400 mil TSOP Type-II packages.

Address input Data input/output Chip enable input Lower byte enable input to DQ8) Upper byte enable input to DQ16) Write enable input Output enable input +3.3 V power supply Ground No connect

x 8 mm, 0.75 mm Bump Pitch (Package U) Rev: Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Not Selected Read High Z Write Not Write, High Z High Z High Z
Not Selected Read High Z Read Write Not Write, High Z Write High Z High Z
Supply Voltage Input Voltage Output Voltage Allowable power dissipation Storage temperature

Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.


 

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