FQP7N65C, FQPF7N65C by onsemi Datasheet | DigiKey

FQP7N65C, FQPF7N65C Datasheet by onsemi

— FAIRCHILD — SEMCDNDUCTDRK
©2004 Fairchild Semiconductor Corporation
FQP7N65C/FQPF7N65C
QFET
®
Rev. A, May 2004
FQP7N65C/FQPF7N65C
650V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 7A, 650V, R
DS(on)
= 1.4Ω @V
GS
= 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter FQP7N65C FQPF7N65C Units
V
DSS
Drain-Source Voltage 650 V
I
D
Drain Current - Continuous (T
C
= 25°C) 77 *A
- Continuous (T
C
= 100°C) 4.2 4.2 * A
I
DM
Drain Current - Pulsed
(Note 1)
28 28 * A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
212 mJ
I
AR
Avalanche Current
(Note 1)
7A
E
AR
Repetitive Avalanche Energy
(Note 1)
1.6 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C) 160 52 W
- Derate above 25°C 1.28 0.42 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQP7N65C FQPF7N65C Units
R
θJC
Thermal Resistance, Junction-to-Case 0.78 2.4 °C/W
R
θCS
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220
FQP Series
GSD
TO-220F
FQPF Series
GS
D
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S
D
G
Rev. A, May 2004
FQP7N65C/FQPF7N65C
©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, I
AS
= 7A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 7A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA650 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= 250 µA, Referenced to 25°C -- 0.8 -- V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 650 V, V
GS
= 0 V -- -- 1 µA
V
DS
= 520 V, T
C
= 125°C -- -- 10 µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA2.0 -- 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance V
GS
= 10 V, I
D
= 3.5 A -- 1.2 1.4 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 3.5 A
(Note 4)
-- 8 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 955 1245 pF
C
oss
Output Capacitance -- 100 130 pF
C
rss
Reverse Transfer Capacitance -- 12 16 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 325 V, I
D
= 7A,
R
G
= 25 Ω
(Note 4, 5)
-- 20 50 ns
t
r
Turn-On Rise Time -- 50 110 ns
t
d(off)
Turn-Off Delay Time -- 90 190 ns
t
f
Turn-Off Fall Time -- 55 120 ns
Q
g
Total Gate Charge V
DS
= 520 V, I
D
= 7A,
V
GS
= 10 V
(Note 4, 5)
-- 28 36 nC
Q
gs
Gate-Source Charge -- 4.5 -- nC
Q
gd
Gate-Drain Charge -- 12 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 28 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 7A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 7A,
dI
F
/ dt = 100 A/µs
(Note 4)
-- 400 -- ns
Q
rr
Reverse Recovery Charge -- 3.3 -- µC
©2004 Fairchild Semiconductor Corporation
FQP7N65C/FQPF7N65C
Rev. A, May 2004
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
Not es :
※
1. 250µ s Pulse Test
2. T
C
= 25
℃
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
-1
10
0
10
1
150
o
C
25
o
C-55
o
C
Notes :
※
1. VDS = 40V
2. 250µ s Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0 5 10 15
1.0
1.5
2.0
2.5
3.0
V
GS
= 20V
V
GS
= 10V
Note : T
※
J
= 25
℃
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
-1
10
0
10
1
150
℃
Notes :
※
1. V
GS
= 0V
2. 250µ s Pul se Test
25
℃
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
400
800
1200
1600
2000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
※
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
0 4 8 12 16 20 24 28
0
2
4
6
8
10
12
V
DS
= 325V
V
DS
= 130V
V
DS
= 520V
Note : I
※
D
= 7A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
HHHH HHHH NM NM
Rev. A, May 2004
FQP7N65C/FQPF7N65C
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
(Continued)
Figure 9-1. Maximum Safe Operating Area
for FQP7N65C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF7N65C
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
※
1. V
GS
= 0 V
2. I
D
= 250 µ A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
※
1. V
GS
= 10 V
2. I
D
= 3.5 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
25 50 75 100 125 150
0
2
4
6
8
I
D
, Drain Current [A]
T
C
, Case Temperature [ ]
℃
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
µ
s
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)
Not es :
※
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Figure 7. Breakdown Voltage Variation
vs Temperature Figure 8. On-Resistance Variation
vs Temperature
Rev. A, May 2004
FQP7N65C/FQPF7N65C
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
(Continued)
Figure 11. Transient Thermal Response Curve for FQP7N65C
Figure 11-2. Transient Thermal Response Curve for FQPF7N65C
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
※
1. Z
θJC
(t) = 0.78 /W Max.
℃
2. D uty F ac to r, D = t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
sin g le p u ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t
1
, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
※
1 . Z
θJC
(t) = 2.4 /W M a x.
℃
2 . D u ty F acto r, D = t
1
/t
2
3 . T
JM
- T
C
= P
DM
* Z
θJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θJC
(t), Thermal Response
t
1
, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
Rev. A, May 2004
FQP7N65C/FQPF7N65C
©2004 Fairchild Semiconductor Corporation
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=LI
AS2
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
L
I
D
t
p
E
AS
=LI
AS2
----
2
1
E
AS
=LI
AS2
----
2
1
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
LL
I
D
I
D
t
p
Rev. A, May 2004
FQP7N65C/FQPF7N65C
©2004 Fairchild Semiconductor Corporation
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
Rev. A, May 2004
FQP7N65C/FQPF7N65C
©2004 Fairchild Semiconductor Corporation
Package Dimensions
4.50 ±0.20
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30 18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30 +0.10
–0.05
0.50 +0.10
–0.05
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
TO-220
Dimensions in Millimeters
Rev. A, May 2004
FQP7N65C/FQPF7N65C
©2004 Fairchild Semiconductor Corporation
Package Dimensions
(Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
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