FQPF5N50C

Power MOSFET, N-Channel, QFET^®, 500 V, 5 A, 1.4 Ω, TO-220F

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Applications

High Efficiency Switched Mode Power Supplies
Active Power Factor Correction (PFC)
Electronic Lamp Ballasts based on Half Bridge Topology

Features

5A, 500V
R_DS(ON) = 1.4 Ω @ V_GS = 10V
Low gate charge ( typical 18nC)
Low Crss ( typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQPF5N50CYDTU

Last Shipments

TO-220-3

340BJ

TUBE

800

500

1400

N-Channel

Single

±30

480

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FQPF5N50C

Power MOSFET, N-Channel, QFET®, 500 V, 5 A, 1.4 Ω, TO-220F

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Power MOSFET, N-Channel, QFET^®, 500 V, 5 A, 1.4 Ω, TO-220F