FQD7N30

Power MOSFET, N-Channel, QFET^®, 300 V, 5.5 A, 700 mΩ, DPAK

Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Applications

Lighting

Features

5.5A, 300V, R_DS(on) = 700mΩ(Max.) @V_GS = 10 V, I_D = 2.75A
Low gate charge ( Typ. 13nC)
Low C_rss ( Typ. 12pF)
100% avalanche tested

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQD7N30TM

Last Shipments

DPAK-3 / TO-252-3

369AS

260

REEL

2500

300

700

N-Channel

Single

±30

5.5

470

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FQD7N30

Power MOSFET, N-Channel, QFET®, 300 V, 5.5 A, 700 mΩ, DPAK

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Power MOSFET, N-Channel, QFET^®, 300 V, 5.5 A, 700 mΩ, DPAK