Price and Stock
| Distributor | SKU | Stock | MOQ | 1 | 10 | 100 | 1000 | 10000 |
|---|---|---|---|---|---|---|---|---|
| Avnet | FQAF10N80 | 7549 | 199 | --- | --- | $ 1.86 * | $ 1.71 | $ 1.61 |
| Farnell | 4280093 | 7549 | 198 | --- | --- | $ 2.10 * | --- | --- |
| Microchip USA | FQAF10N80 | 7537 | 100 | --- | --- | --- | --- | --- |
| Component Stockers USA | FQAF10N80 | 16946 | $ 1.80 | $ 1.80 | $ 1.69 | $ 1.54 | --- | |
| Jak Electronics | FQAF10N80 | 8654 | $ 10.12 | $ 9.55 | $ 9.01 | $ 8.02 | $ 7.64 | |
| Win Source | 454635-FQAF10N80 | 1 | 3 | $ 12.34 * | $ 12.34 | $ 12.34 | $ 12.34 | $ 12.34 |
| Andel Nordic | FQAF10N80 | 2184 | $ 2.18 | $ 2.15 | --- | --- | --- | |
| NewYang | FQAF10N80 | 10000 | $ 2.04 | $ 1.94 | $ 1.77 | $ 1.56 | --- | |
| Cytech Systems | FQAF10N80 | 7000 | $ 2.25 | $ 2.12 | $ 2.00 | $ 1.89 | $ 1.78 | |
| Easev | FQAF10N80 | 3499 | $ 1.81 | --- | --- | --- | --- | |
| PNEDA Technology Co., Ltd. | FQAF10N80 | 1877 | $ 1.80 | --- | --- | --- | --- | |
| Anansix Microsemi | FQAF10N80 | 401 | $ 74.74 | --- | --- | --- | --- | |
| YIC International | FQAF10N80 | 11342 | --- | --- | --- | --- | --- | |
| Richard Electronics | AHNG-FQAF10N80 | 0 | $ 10.86 | $ 10.24 | $ 9.66 | $ 9.12 | $ 8.60 | |
| Augswan | FQAF10N80 | 8312 | 5 | $ 1.64 * | $ 1.61 | $ 1.56 | $ 1.51 | $ 1.44 |
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FQAF10N80 Datasheet
Technical Specifications
onsemi FQAF10N80 technical specifications, attributes, and parameters.
Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail. N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF - Bulk. MOSFETs 800V N-Channel QFET.
Physical |
|
|---|---|
| Case/Package | SC |
| Mount | Through Hole |
Technical |
|
|---|---|
| Continuous Drain Current (ID) | 6.7 A |
| Current Rating | 9.8 A |
| Drain to Source Breakdown Voltage | 800 V |
| Drain to Source Resistance | 1.05 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| Element Configuration | Single |
| Fall Time | 75 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 2.7 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 113 W |
| Min Operating Temperature | -55 °C |
| Power Dissipation | 113 W |
| Rds On Max | 1.05 Ω |
| Rise Time | 115 ns |
| Turn-Off Delay Time | 125 ns |
| Voltage Rating (DC) | 800 V |
Compliance |
|
|---|---|
| Lead Free | Lead Free |
Images
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