onsemi FQAF10N80
Technical Specifications
Physical
Case/PackageSC
MountThrough Hole
Technical
Continuous Drain Current (ID)6.7 A
Current Rating9.8 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.05 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.7 nF
Max Operating Temperature150 °C
Max Power Dissipation113 W
Min Operating Temperature-55 °C
Power Dissipation113 W
Rds On Max1.05 Ω
Rise Time115 ns
Turn-Off Delay Time125 ns
Voltage Rating (DC)800 V
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for onsemi FQAF10N80.
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Descriptions
Descriptions of onsemi FQAF10N80 provided by its distributors.
Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail
N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF - Bulk
MOSFETs 800V N-Channel QFET
OEMs, CMs ONLY (NO BROKERS)
MISCELLANEOUS MOSFETS;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON SEMICO
- ON SEMICONDUCTOR COR
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON SEMICONDUCT
- ON-SEMI SCG
- ON SEMICONDUTOR
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSC
MountThrough Hole
Technical
Continuous Drain Current (ID)6.7 A
Current Rating9.8 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.05 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.7 nF
Max Operating Temperature150 °C
Max Power Dissipation113 W
Min Operating Temperature-55 °C
Power Dissipation113 W
Rds On Max1.05 Ω
Rise Time115 ns
Turn-Off Delay Time125 ns
Voltage Rating (DC)800 V