FN1L4L Datasheet, Equivalent, Cross Reference Search
Type Designator: FN1L4L
SMD Transistor Code: M30
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 15
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO236
Datasheet: FN1A4P , FN1A4Z , FN1F4M , FN1F4N , FN1F4Z , FN1L3M , FN1L3N , FN1L3Z , 2SC6090LS , FN1L4M , FN1L4Z , FOS100 , FOS101 , FOS102 , FOS104 , FP5010 , FP50201 .