—
FAIRCHILD
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SEMCDNDUCTDRK
©2002 Fairchild Semiconductor Corporation Rev. A, June 2002
FJPF9020
FJPF9020
Monolithic Construction With Built In Base-Emitter
Shunt Resistors
• High Collector-Base Breakdown Voltage : BVCBO = -550V
• High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.)
• Industrial Use
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 550 V
VCEO Collector-Emitter Voltage - 550 V
VEBO Emitter-Base Voltage - 6 V
IC Collector Current (DC) - 2 A
ICP Collector Current (Pulse) - 4 A
PC Collector Dissipation (TC=25°C) 15 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = - 100uA, IE = 0 - 550 V
BVCEO Collector-Emitter Breakdown Voltage IC = - 500uA, IB = 0 - 550 V
BVEBO Emitter-Base Breakdown Voltage IE = - 200mA, IC = 0 -6 V
ICBO Collector Cut-off Current VCE = - 550V, IE = 0 -100 µA
IEBO Emitter Cut-off Current VEB = - 6V, IC = 0 -10 -20 mA
hFE DC Current Gain VCE = - 4V, IC = - 1A 400 550 700
VCE(sat) Collector-Emitter Saturation Voltage IC = - 1A, IB = - 20mA -1.0 - 1.5 V
VBE(sat) Base-Emitter Saturation Voltage IC = - 1A, IB = - 20mA -1.5 - 2.0 V
Equivalent Circuit
B
E
C
R1 R2
R
1600Ω≅
R
2150Ω≅
1
1.Base 2.Collector 3.Emitter
TO-220F
©2002 Fairchild Semiconductor Corporation
FJPF9020
Rev. A, June 2002
Typical Characteristics
Figure 1. Static Characterstic Figure 2. DC current Gain
Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Output Capacitance
-0 -1 -2 -3 -4 -5
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
IB = - 40mA
IB = - 15mA
IB = - 3mA
IB = - 1.5mA
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1
10
100
1000
125oC
75oC25oC
- 25oC
VCE = - 4V
- 4
- 0.03
HFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
-1E-3 -0.01 -0.1
-0
-1
-2
-3
-4
- 0.4
IC = - 2A
IC = - 1A
VCE(sat) [V], SATURATION VOLTAGE
IB [A], BASE CURRENT
-1
-0
-1
-2
-3
125oC
75oC
25oC- 25oC
IC / IB = 50
- 4
- 0.2
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
-0.0
-0.5
-1.0
-1.5
-2.0
125oC
75oC
25oC
- 25oC
VCE = - 4V
IC [A], COLLECTOR CURRENT
VBE [V], BASE-EMITTER VOLTAGE
-0 -5 -10 -15 -20 -25
10
100
1000
f = 1MHz
Cob [pF], OUTPUT CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
©2002 Fairchild Semiconductor Corporation
FJPF9020
Rev. A, June 2002
Typical Characteristics (Continued)
Figure 7. Forward Bias Safe Operating Area Figure 8. Power Derating
-1 -10 -100 -1000
-1E-3
-0.01
-0.1
-1
-10
10ms100ms
IC (Pulse)
IC (DC)
Single Pulse
Ta=25oC
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
PC [W], COLLECTOR POWER DISSIPATION
TC [oC], CASE TEMPERATURE
Package Demensions
FJPF9020
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, June 2002
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.10
15.80
±0.20
15.87
±0.20
6.68
±0.20
9.75
±0.30
4.70
±0.20
10.16
±0.20
(1.00x45°)
2.54
±0.20
0.80
±0.10
9.40
±0.20
2.76
±0.20
0.35
±0.10
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
0.50
+0.10
–0.05
TO-220F
©2002 Fairchild Semiconductor Corporation Rev. H7
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
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changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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