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FAIRCHII—D
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SEMCDNDUCTDRK
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
FJNS4213R
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -10 V
ICCollector Current -100 mA
PCCollector Power Dissipation 300 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -10µA, IE=0 -50 V
BVCEO Collector-Emitter Breakdown Voltage IC= -100µA, IB=0 -50 V
ICBO Collector Cutoff Current VCB= -40V, IE=0 -0.1 µA
hFE DC Current Gain VCE= -5V, IC= -5mA 68
VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -0.3 V
fTCurrent Gain Bandwidth Product VCE= -10V, IC=-5mA 200 MHz
Cob Output Capacitance VCB= -10V, IE=0
f=1.0MHz
5.5 pF
VI(off) Input Off Voltage VCE= -5V, IC= -100µA-0.5 V
VI(on) Input On Voltage VCE= -0.2V, IC= -10mA -1.1 V
R1Input Resistor 1.5 2.2 2.9 KΩ
R1/R2Resistor Ratio 0.042 0.047 0.052
FJNS4213R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=2.2KΩ, R2=47KΩ)
• Complement to FJNS3213R
Equivalent Circuit
B
E
C
R1
R2
1.Emitter 2. Collector 3. Base
TO-92S
1
Package Dimensions
FJNS4213R
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
4.00
±0.20
3.72
±0.20
2.86
±0.20
2.31
±0.20
3.70
±0.20
0.77
±0.10
14.47
±0.30
(1.10)
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
1.27TYP
0.66 MAX.
0.35
+0.10
–0.05
TO-92S
©2002 Fairchild Semiconductor Corporation Rev. I1
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