FJNS4205R Datasheet, Equivalent, Cross Reference Search
Type Designator: FJNS4205R
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO-92S
FJNS4205R Transistor Equivalent Substitute - Cross-Reference Search
FJNS4205R Datasheet (PDF)
fjns4205r.pdf
FJNS4205RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJNS3205RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
fjns4208r.pdf
FJNS4208RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJNS3208RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
fjns4202r.pdf
FJNS4202RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJNS3202RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
fjns4206r.pdf
FJNS4206RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJNS3206RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
fjns4204r.pdf
FJNS4204RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=47K) Complement to FJNS3204RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value Units CV
fjns4207r.pdf
FJNS4207RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJNS3207RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
fjns4203r.pdf
FJNS4203RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJNS3203RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
fjns4201r.pdf
FJNS4201RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJNS3201RTO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
Datasheet: 2SD542 , 2SD543 , 2SD544 , 2SD544-1 , 2SD544-2 , 2SD545 , 2SD545D , 2SD545E , BC556 , 2SD545G , 2SD546 , 2SD547 , 2SD548 , 2SD549 , 2SD55 , 2SD550 , 2SD551 .
