FJAF6806D Datasheet PDF

FJAF6806D FJAF6806D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µs • For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=

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25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature 50Ω typ. E Rating 1500 750 6 6 12 50 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A IF = 4.5A VCC=200V, IC=4A, RL=50Ω IB1=1.0A, IB2= - 2.0A 40 6 8 4 7 5 1.5 2 3 0.2 V V V µs µs Min Typ Max 1 10 200 Units mA µA mA V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 2.5 Units °C/W ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJAF6806D Typical Characteristics 8 100 7 VCE = 5V IB = 2.0A Ta = 25 C o o IC [A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 6 Ta = 125 C 5 IB = 0.8A 4 IB = 0.6A IB = 0.4A IB = 0.2A 10 Ta = - 25 C o 3 2 1 0 0 2 4 6 8 10 1 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VCE(sat) [V], SATURATION VOLTAGE Ta = - 25 C 1 o o VCE(sat) [V], SATURATION VOLTAGE IC = 5 IB Ta = 125 C o IC = 3 IB Ta = 125 C o 1 Ta = 25 C Ta = 25 C o Ta = - 25 C 0.1 o 0.1 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 10 VCE = 5 V 8 tSTG & tF [µ s], SWITCHING TIME IC [A], COLLECTOR CURRENT tSTG 1 6 4 Ta = 25 C o 2 Ta = 125 C Ta = - 25 C o o tF VCC = 200V, IC = 4A, IB1 = 1A 0.1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE [V], BASE-EMITTER ON VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJAF6806D Typical Characteristics (Continu