FJAF6806D datasheet - FJAF6806D - NPN Triple Diffused Planar Silicon Transistor

Details, datasheet, quote on part number: FJAF6806D
PartFJAF6806D
Category
DescriptionFJAF6806D - NPN Triple Diffused Planar Silicon Transistor
CompanyFairchild Semiconductor
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Features, Applications

High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In)

High Collector-Base Breakdown Voltage : BVCBO = 1500V High Switching Speed : tF(typ.) =0.1�s For Color 2.Collector 3.Emitter

Absolute Maximum Ratings TC=25�C unless otherwise noted

Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature

Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions V �s Min Typ Max 10 200 Units mA V

Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 2.5 Units �C/W



Figure 9. Reverse Bias Safe Operating Area
Figure 10. Forward Bias Safe Operating Area

 

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