IXYS
1 - 4© 2005 IXYS All rights reserved
0549
FII 30-12E
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• NPT3 IGBT
- positive temperature coefficient of
saturation voltage for easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
IC25 = 33 A
VCES = 1200 V
VCE(sat) typ = 2.4 V
NPT3 IGBT
Phaseleg Topology
in ISOPLUS i4-PACTM
3
5
4
1
2
1
5
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ± 20 V
IC25 TC = 25°C 33 A
IC90 TC = 90°C 20 A
ICM VGE = ±15 V; RG = 68 Ω; TVJ = 125°C 40 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 150 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25°C 2.4 2.9 V
TVJ = 125°C 2.8 V
VGE(th) IC = 0.6 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.2 mA
TVJ = 125°C 0.2 mA
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on) 205 ns
tr105 ns
td(off) 320 ns
tf175 ns
Eon 4.1 mJ
Eoff 1.5 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 1.2 nF
QGon VCE = 600 V; VGE = 15 V; IC = 20 A 100 nC
RthJC 0.8 K/W
RthJH with heat transfer paste 1.2 K/W
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 20 A
VGE = ±15 V; RG = 68 Ω
IXYS
2 - 4© 2005 IXYS All rights reserved
0549
FII 30-12E
IXYS reserves the right to change limits, test conditions and dimensions.
Component
Symbol Conditions Maximum Ratings
TVJ -55...+150 °C
Tstg -55...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~
FCmounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ. max.
Cpcoupling capacity between shorted pins 40 pF
and mounting tab in the case
dS,dApin - pin 1.7 mm
dS,dApin - backside metal 5.5 mm
Weight 9g
Diodes
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 25 A
IF90 TC = 90°C 15 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 20 A; TVJ = 25°C 2.5 3.0 V
TVJ = 125°C 1.9 V
IRM IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C 16 A
trr VR = 600 V; VGE = 0 V 130 ns
RthJC (per diode) 2.3 K/W
RthCH with heat transfer paste 3.6 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V
0
= 1.09 V; R
0
= 85 m
Ω
Free Wheeling Diode (typ. at TJ = 125°C)
V
0
= 1.3 V; R
0
= 32 m
Ω
Thermal Response
IGBT (typ.)
C
th1
= 0.049 J/K; R
th1
= 0.15 K/W
C
th2
= 0.133 J/K; R
th2
= 0.65 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.021 J/K; R
th1
= 0.63 K/W
C
th2
= 0.052 J/K; R
th2
= 1.67 K/W
Dimensions in mm (1 mm = 0.0394")
3 - 4© 2005 IXYS All rights reserved
0549
FII 30-12E
IXYS reserves the right to change limits, test conditions and dimensions.
0 200 400 600 800 1000
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0123456
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0 20406080100
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15
0123456
0
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60
VCE
V
IC
VCE
A
IC
V
nC
QG-di/dt
V
VGE
IRM trr
A/µs
FII30-12E
IRM
trr
9 V
11 V
A
11 V
0 5 10 15 20
0
20
40
60
80
V
VGE
A
IC
01234
0
10
20
30
40
50
V
VF
IF
A
ns
9 V
13 V
13 V
15 V
TVJ = 25°C
TVJ = 125°C
VCE = 20 V
TVJ = 125°C TVJ = 25°C
TVJ = 125°C
VR = 600 V
IF = 15 A
TVJ = 25°C
VGE = 17 V
A
VGE = 17 V
TVJ = 125°C
VCE = 600 V
IC = 20 A
15 V
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
4 - 4© 2005 IXYS All rights reserved
0549
FII 30-12E
IXYS reserves the right to change limits, test conditions and dimensions.
0 10203040
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250
0 10203040
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
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150
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400
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
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0.0
0.5
1.0
1.5
2.0
2.5
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1250
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0
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10
single pulse
0 200 400 600 800 1000 1200
0
20
40
60
80
Eoff
td(off)
tf
Eon
tr
Eoff
td(off)
tf
IC
A
IC
A
Eoff
Eon tt
RG
Ω
RG
Ω
VCE t
s
mJ
Eon
mJ
Eoff
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
mJ ns
td(on)
VCE = 600 V
VGE = ±15 V
IC = 20 A
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
IC = 20 A
TVJ = 125°C
FII30-12E
VCE = 600 V
VGE = ±15 V
RG = 68 Ω
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
RG = 68 Ω
TVJ = 125°C
RG = 68 Ω
TVJ = 125°C
mJ ns
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy vs gate resistor Fig.10 Typ. turn off energy and switching
times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
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