FHX04X datasheet -

Details, datasheet, quote on part number: FHX04X
PartFHX04X
CategoryRF & Microwaves => Transistors
TitleHEMT
Description
CompanyFujitsu Microelectronics, Inc.
DatasheetDownload FHX04X Datasheet
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Features, Applications

Low Noise Figure: (Typ.)@f=12GHz (FHX04) High Associated Gain: = 200�m Gold Gate Metallization for High Reliability

DESCRIPTION

The FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25�C)

Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature

*Note: Mounted on Al2O3 board x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with gate resistance 4000. 3. The operating channel temperature (Tch) should not exceed 80�C.

Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX04X Associated Gain Noise Figure FHX05X Associated Gain Noise Figure FHX06X Associated Gain Maximum Available Gain Thermal Resistance Symbol IDSS gm Vp VGSO NF Gas NF Gas NF Gas Ga(max) Same as above, Gain matched Rth Channel to Case Test Conditions VDS = 2V, VGS = 0V VDS = 2V, IDS = 10mA VDS = 2V, IDS = 1mA IGS = -10�A Min. Limit Typ. Max. Unit V dB �C/W

Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.

POWER DERATING CURVE 200 Total Power Dissipation (W) 150 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 Drain Current (mA) 30 VGS = 0V

NF & Gas vs. IDS 3 Noise Figure (dB) VDS=2V 2 Gas 12 Associated Gain (dB) NF Drain Current (mA) 30 Output Power (dBm)


NOTE:* The data includes bonding wires. n: number of wires Gate n=2 (0.3mm length, 20um Dia Au wire) Drain n=2 (0.3mm length, 20um Dia Au wire) Source n=4 (0.3mm length, 20um Dia Au wire)


 

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