FHX04LG datasheet - C, X/Ku, K-band Low Noise Hemts

Details, datasheet, quote on part number: FHX04LG
PartFHX04LG
CategoryRF & Microwaves => Transistors
TitleHEMT
DescriptionC, X/Ku, K-band Low Noise Hemts
CompanyFujitsu Microelectronics, Inc.
DatasheetDownload FHX04LG Datasheet
Cross ref.Similar parts: NE425S01
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Features, Applications

Low Noise Figure: (Typ.)@f=12GHz (FHX04) High Associated Gain: = 200�m Gold Gate Metallization for High Reliability Cost Effective Ceramic Microstrip (SMT) Package Tape and Reel Packaging Available

DESCRIPTION

The is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise applications. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance.

Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature

*Note: Mounted on Al2O3 board x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with gate resistance 4000. 3. The operating channel temperature (Tch) should not exceed 80�C.

Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX04LG Associated Gain Noise Figure FHX05LG Associated Gain Noise Figure FHX06LG Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Symbol IDSS gm Vp VGSO NF Gas NF Gas NF Gas Rth Condition VDS = 2V, VGS = 0V VDS = 2V, IDS =10mA VDS = 2V, IDS =1mA IGS = -10�A Min. Limit Typ. Max. Unit V dB �C/W

Note: RF parameters are measured on a sample basis as follows: Lot qty. Sample qty. Accept/Reject 1200 or less to or over 500 (1,2) Edition 1.1 July 1999

POWER DERATING CURVE 200 Total Power Dissipation (mW) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 VGS =0V

Ambient Temperature (�C) NF & Gas vs. FREQUENCY VDS=2V IDS=10mA Noise Figure (dB) Gas 2 10 Noise Figure (dB) 3 15 Associated Gain (dB) 20 3

Frequency (GHz) NF & Gas vs. TEMPERATURE IDS=10mA 15 Gas 10 Output Power (dBm)
Drain Current (mA) OUTPUT POWER vs. INPUT POWER VDS=2V 10


 

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