100331QC : 100331 - Low Power Triple D-type Flip-flop

74LVQ241QSC : Bus Oriented Circuits Low Voltage Octal Buffer/line Driver With 3-STATE Outputs

74LVTH16240MTD : CMOS/BiCMOS->LVT/ALVT/LCX/LPT Family->Low Voltage Low Voltage 16-Bit Inverting Buffer/line Driver With 3-STATE Outputs

CD4024BC : CMOS/BiCMOS->4000 Family 7-Stage Ripple Carry Binary Counter

6N137V : High Speed 10mbit/s Logic Gate Optocouplers

QL332YD : LEDs -; LED SS YELLOW DIFFUSED SHORT 5MM Specifications: Color: Yellow ; Lens Style/Size: Round with Domed Top, 5mm, T-1 3/4 ; Millicandela Rating: 10mcd ; Voltage - Forward (Vf) Typ: 2V ; Wavelength - Dominant: 585nm ; Wavelength - Peak: 585nm ; Current - Test: 10mA ; Viewing Angle: 45� ; Lens Type: Diffused, Tinted ; Luminous Flux @ Curr

IRF630B_FP001 : Fet - Single Discrete Semiconductor Product 9A 200V 72W Through Hole; MOSFET N-CH 200V 9A TO-220 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 200V ; Current - Continuous Drain (Id) @ 25� C: 9A ; Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V ; Input Capacitance (Ciss) @ Vds: 720pF @ 25V ; Power - Max: 72W ; Packaging: Tube

NDP7061S62Z : 64 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0160 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1

NZT6728S62Z : 1200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR Specifications: Polarity: PNP

1N4003 : Pakage = DO-41 ;; Max. Reverse Voltage VRM (V)= 200 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30.

BFX34SMD : Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 60V ;; IC(cont) = 5A ;; HFE(min) = 40 ;; HFE(max) = 150 ;; @ Vce/ic = 2V / 2A ;; FT = 70MHz ;; PD = 0.87W.

BUK7518-55 : BUK7518-55; Trenchmos (tm) Transistor Standard Level Fet. N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device very low on-state resistance and has integral zener diodes giving ESD protection It is intended for use in automotive and general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage.

IRFR4105Z : 55V Single N-channel HexFET Power MOSFET in a D-pak Package. Advanced Process Technology Ultra Low On-Resistance 175�C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Specifically designed for Automotive applications, this HEXFET� Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional of this design are a 175�C junction.

MJE340 : Plastic Medium Power NPN Silicon Transistor , Package: TO-225, Pins=3.

PMEG2005AEL : 0.5 a Ultra Low VF Mega Schottky Barrier Rectifier in Leadless Ultra Small SOD882.Planar Maximum Efficiency General Application (MEGA) Schottky Barrier Diode With an Integrated Guard Ring For Stress Protection Encapsulated in a SOD882 Leadless Ultra Small Plastic Package. Forward Current: 0.5 a Reverse Voltage: 20 V Ultra Low Forward Voltage Leadless.

SA60CA : 500 Watt Transient Voltage Suppressors. Glass passivated junction. 500W Peak Pulse Power capability on Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical IR less than 1.0 �A above 10V. COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL DEVICES ONLY. NO COLOR BAND.

ZXT3M322 : PNP Low Sat Transistor. MPPSTM Miniature Package Power Solutions 40V PNP LOW SATURATION SWITCHING TRANSISTOR Packaged in the innovative x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users.

STB140N10F4 : Power MOSFETs N-channel 100 V, 5.2 m?, 60 A TO-220, D�PAK, TO-220FP STripFET� DeepGATE� Power MOSFET.

03028-BX472ZJZ-B : CAPACITOR, CERAMIC, MULTILAYER, 25 V, BX, 0.0047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0047 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology.

BF2030RE6433 : UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Depletion ; V(BR)DSS: 10 volts ; Package Type: SOT143, SOT-143R, 4 PIN ; Number of units in IC: 1.

CD430840B : 63 A, 800 V, SCR. s: VDRM: 800 volts ; VRRM: 800 volts ; IT(RMS): 63 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: POW-R-BLOK-7 ; Pin Count: 7.

ECEV0JA220NS : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, NON-POLARIZED, 6.3 V, 22 uF, SURFACE MOUNT. s: Capacitance Range: 22 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 6 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature: -40 to 85 C (-40 to 185 F).

F9202 : 700 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 700 volts ; rDS(on): 1.2 ohms ; Package Type: MPD-7.

MURF1040 : 10 A, SILICON, RECTIFIER DIODE, TO-220AC. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 10000 mA ; trr: 0.0500 ns.

PN3638D26Z : 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: PNP.

Y0073 : RESISTOR, METAL FOIL, 0.25 W, 0.01 - 1 %, 8 ppm, 5 ohm - 50000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Metal Foil ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, LEAD/ROHS COMPLIANT ; Operating DC Voltage: 250 volts ; Operating Temperature: -55 to 155 C (-67 to 311 F).

203519 : DATACOM TRANSFORMER FOR 1000 BASE-T APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

5800-101 : 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: Axial, WIRE ; Application: General Purpose, High Current ; Inductance Range: 100 microH ; Rated DC Current: 632 milliamps ; Operating Temperature: -55 to 105 C (-67 to 221 F).