FFD-25-IDEP-20480-T-H : Fast Flash Disks Fast Flash Disk 2.5" Ide Plus

FFD-250-IDE-384-T-HXX : Fast Flash Disks Fast Flash Disk 2.5" Ide

FFD-250-SCSI-3584-T-HXX : Fast Flash Disks Fast Flash Disk 2.5" Scsi

FFD-350-256-T : Fast Flash Disks Fast Flash Disk 3.5" Scsi

FFD35US-20480-T-P50 : Fast Flash Disks Fast Flash Disk 3.5" Ultra Narrow Scsi

FFD35US-4096-T-PXX : Fast Flash Disks Fast Flash Disk 3.5" Ultra Wide Scsi

FFD35US-512-T-PXX : Fast Flash Disks Fast Flash Disk 3.5" Ultra Wide Scsi

MD2241-D96-V3-X : DiskOnChip Diskonchip Dimm Plus

MD5811-D256-V3Q18-X : DiskOnChip Mobile Diskonchip P3 Data Sheet

723666 : 4K X 36 X 2 Triple-bus Fifo, 5.0V. Memory storage capacity: x 2 Clock frequencies to 83 MHz (8ns access time) Two independent FIFOs buffer data between one bidirectional 36-bit port and two unidirectional 18-bit ports (Port C receives and Port B transmits) 18-bit (word) and 9-bit (byte) bus sizing of 18 bits (word) on Ports B and C Select IDT Standard timing (using EFA , EFB , FFA , and FFC flag.

74F219A : 64-bit RAM. 74F219A; 64-bit TTL Bipolar RAM, Non-inverting (3-State);; Package: SOT109 (SO16), SOT38-4 (DIP16).

CXK79M36C163GB : Memory-sigmaram 16meg 1x2 Lvcmox I/o (512k X 36). The is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in compliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAMTM devices. It integrates input registers, high speed RAM, output registers, and a two-deep write buffer onto a single monolithic IC. Double Data Rate (DDR) Pipelined (PL) read.

CY62167DV20L-55BVI : MicroPower asynchronous SRAM. Micropower Asynchronous SRAMs. Very high speed: 55 ns and 70 ns Wide voltage range: to 2.2V Ultra-low active power Typical active current: 1.5 mA MHz Typical active current: f = fMAX Ultra-low standby power Easy memory expansion with CE</>1</>, CE2</> and OE</> toggling. The device can be put into standby mode reducing power consumption by more than 99% when.

CYM1831 : 64K X 32 Static RAM Module. High-density 2-Mbit SRAM module 32-bit standard footprint supports densities from x 32 through x 32 High-speed CMOS SRAMs Access time of 15 ns Low active power 5.3W (max.) SMD technology TTL-compatible inputs and outputs Low profile Max. height of 0.50 in. Small PCB footprint 1.2 sq. in. on an epoxy laminate board with pins. Four chip selects CS2, CS3,.

HYM71V32S755HCT4M : ->Registered DIMM. 32Mx72 Bits PC100 Sdram Registered Dimm With Pll, Based on 32Mx4 Sdram With Lvttl, 4 Banks & 4K Refresh.

IS61LV10248 : 1Mx8. High-speed access times: 8, 10 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 3.3V power supply Packages available: � 48-ball miniBGA � 36-ball.

M364C0803BJ0 : Buffered DIMM. = M364C0803BJ0 Fast Page Mode:8Mx64 DRAM Dimm With Ecc Using 8Mx8,4K&8K Refresh,5V ;; Density(MB) = 64 ;; Organization = 8Mx64 ;; Mode = FP ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (8Mx8)x8+Drive ICx2 ;; Production Status = Eol ;; Comments = Buffered.

M463L0914DT0 : = M463L0914DT0 8M X 64 172pin DDR Micro Dimm Based on 8M X 16 ;; Density(MB) = 64 ;; Organization = 8Mx64 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = B3,A2,B0,A0 ;; #of Pin = 172 ;; Power = C,l ;; Component Composition = (8Mx16)x4 ;; Production Status = Eol ;; Comments = -.

MBM29F200TC/BC : . Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as E2PROMs Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (Package suffix: PFTN � Normal Bend Type, PFTR � Reversed Bend Type) 44-pin SOP (Package suffix: PF) Minimum 100,000 write/erase cycles.

MX23C3211 : 32M, 4Mx8/2Mx16. Bit organization x 8 (byte mode) x 16 (word mode) Fast access time - Random access: 100ns (max.) - Page access: 30ns (max.) Page Size - 8 words per page Current - Standby:50uA Supply voltage - 5V�10% Package - 44 pin SOP - 48 pin TSOP x 20mm) Part No. Access Page Access Package Time 100ns 120ns Time 50ns 44 pin SOP 44 pin SOP 48 pin TSOP 48 pin TSOP.

PSD4256G6V : PSD(Programmable System Memories). Flash In-system Programmable (ISP) Peripherals For 16-BIT MCUs.

SST34HF1681 : 16 Mbit Concurrent Superflash + 8 Mbit SRAM Combomemory. 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory Flash Organization: 1M x16 Dual-Bank Architecture for Concurrent Read/Write Operation � 16 Mbit: 12 Mbit + 4 Mbit SRAM Organization: � 8 Mbit: 512K x16 Single 2.7-3.3V Read and Write Operations Superior Reliability � Endurance: 100,000 Cycles (typical) � Greater than 100 years Data Retention Low Power.

IDT71T62805S100BQ : 512K X 18 QDR SRAM, 3 ns, PBGA165. s: Memory Category: SRAM Chip ; Density: 9437 kbits ; Number of Words: 512 k ; Bits per Word: 18 bits ; Package Type: 13 X 15 MM, 1 MM PITCH, FBGA-165 ; Pins: 165 ; Supply Voltage: 2.5V ; Access Time: 3 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

KM616S2000LTI-12L0 : 128K X 16 STANDARD SRAM, 120 ns, PDSO44. s: Memory Category: SRAM Chip ; Density: 2097 kbits ; Number of Words: 128 k ; Bits per Word: 16 bits ; Package Type: TSOP, 0.400 INCH, TSOP2-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 120 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

MT41J64M16JT-125:E : 64M X 16 DDR DRAM, PBGA96. s: Memory Category: DRAM Chip ; Density: 1073742 kbits ; Number of Words: 64000 k ; Bits per Word: 16 bits ; Package Type: 8 X 14 MM, LEAD FREE, FBGA-96 ; Pins: 96 ; Logic Family: CMOS ; Supply Voltage: 1.5V ; Operating Temperature: 0 to 85 C (32 to 185 F).

S29PL127J55BAF00 : 8M X 16 FLASH 3V PROM, 55 ns, PBGA80. s: Memory Category: Flash, PROM ; Density: 134218 kbits ; Number of Words: 8000 k ; Bits per Word: 16 bits ; Package Type: 11 X 8 MM, FBGA-80 ; Pins: 80 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 55 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

W981232DB75E : 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90. s: Memory Category: DRAM Chip ; Density: 134218 kbits ; Number of Words: 4000 k ; Bits per Word: 32 bits ; Package Type: 0.80 MM PITCH, TFBGA-90 ; Pins: 90 ; Supply Voltage: 3.3V ; Access Time: 5.4 ns ; Operating Temperature: -25 to 85 C (-13 to 185 F).