FEP16FTA by Onsemi | Diodes & Rectifiers | Partstack
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FEP16FTA

Onsemi

FEP16FTA by Onsemi

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Glotronic Ltd.

UK . 3,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,900

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-

-

-

Supply Digital

USA . 1,366 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,366

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 688 parts In-Stock

1+ parts

$0.597

100+ parts

-

1k+ parts

-

10k+ parts

-

688

$0.597

-

-

-

Northwest PG Solutions

USA . 2,014 parts In-Stock

1+ parts

$0.657

100+ parts

-

1k+ parts

-

10k+ parts

-

2,014

$0.657

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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56,986

-

-

-

-

TANS Electronics

Latvia . 7,383 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,383

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 5,316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,316

-

-

-

-

Problanco Electronics

Mexico . 5,308 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,308

-

-

-

-

Kulean Microsystems

USA . 4,710 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,710

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-

-

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SupplyDigital Components

Austria . 3,114 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,114

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-

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Corphita

USA . 2,724 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,724

-

-

-

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UHIMA Technologies

Türkiye . 261 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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261

-

-

-

-

Technical Specifications

Diodes & Rectifiers FEP16FTA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Package Body Material:

PLASTIC/EPOXY

Maximum Forward Voltage (VF):

1.3 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Type:

Maximum Output Current:

16 A

Surface Mount:

NO

Maximum Reverse Current:

10 uA

No. of Terminals:

3

Terminal Position:

Package Style (Meter):

FLANGE MOUNT

JESD-30 Code:

R-PSFM-T3

No. of Elements:

2

Package Shape:

Terminal Form:

Maximum Operating Temperature:

150 Cel

Case Connection:

ANODE

No. of Phases:

1

Maximum Repetitive Peak Reverse Voltage:

300 V

JEDEC-95 Code:

TO-220AB

Minimum Operating Temperature:

-55 Cel

Maximum Non Repetitive Peak Forward Current:

200 A

Diode Element Material:

SILICON

Maximum Power Dissipation:

8.33 W

Additional Features:

HIGH RELIABILITY

Application:

FAST RECOVERY

Maximum Reverse Recovery Time:

.05 us

Trade Compliance

FEP16FTA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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