FDW2520C by onsemi Datasheet | DigiKey

FDW2520C Datasheet by onsemi

FAIRCHII—D — sEMrcDNDuETDR-M Power nrssrpeuen Operalmg and Storage Junclmn Temperature Range |_||_||_||_| UUUU 1,0 0,6 755 m +150 Therma‘ Resmlance, Junction-Io-Amblent 125 “C/W 208 25200 FDWZSZOC 13" 12mm 2500 umls
July 2008
2008 Fairchild Semiconductor Corporation FDW2520C Rev C1(W)
FDW2520C
Complementary PowerTrench
MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC conversion
• Power management
• Load switch
Features
• Q1: N-Channel
6 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 V
RDS(ON) = 28 mΩ @ VGS = 2.5 V
• Q2: P-Channel
–4.4A, 20 V. RDS(ON) = 35 mΩ @ VGS = –4.5 V
RDS(ON) = 57 mΩ @ VGS = –2.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8 Pin 1
8
7
6
5
1
2
3
4
Q1 Q2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Q1 Q2 Units
VDSS Drain-Source Voltage 20 –20 V
VGSS Gate-Source Voltage ±12 ±12 V
IDDrain Current - Continuous (Note 1a) 6 –4.4 A
- Pulsed 30 –30
PDPower Dissipation (Note 1a) 1.0 W
(Note 1b) 0.6
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W
(Note 1b) 208
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2520C FDW2520C 13’’ 12mm 2500 units
FDW2520C
5v Dram-Source Breakdown v s : o v, ID = 250 11A Q1 20 v Vol1age v, | 7250 11A Q2 ,20 ABVuss Breakdown Vollage 250 “A. Referenced 1e 25%: Q1 14 mV/“C ATr — 450 “A. Referenced lg 2590 | Zero Gale Vellage Dram s v. vGs = u v Q1 1 uA Currem 1s v. vGs = u v Q2 ,1 | Gale-Body Leakage 12 v. vDS : o v Q1 :100 nA 12v.ves:ov Q2 :100 v Gale Threshold Vol1age 55. lg : 250 “A Q1 0 4 10 15 v v55. lg : 7250 “A Q2 41,4 71,0 71.5 New Sale Threshold Vol1age 250 “A. Referenced lo 2571: Q1 733 mV/“C AT. 450 “A. Referenced lg 2590 R Slalrc Dram-Source v s 4,5 v.1D : s A Q1 14 18 m0 vs:2.5v.lu:5A 19 28 6A. 1. :125°c 19 29 Q2 23 35 mi} 43 57 39 56 | Qn.31ale Dram Curren1 , Q1 30 A 45v.vus=r5v Q2 ,30 g Forward Transconduclance VD: = 5 v. lD : s A Q1 30 s veg? 5v.lu:44.4A Q2 17 c lnpul Capacdance Q1 1325 pF Q2 1330 c odlpul Capacrlance Q1 3521 pF Q2 552 0 Reverse Trans1er Q1 1621 pF Capacnance Q2 153 1 Turn-On Delay Tlme Q1 6 20 ns Q2 12 25 1 Turn-On Rlse Tlme Q1 11 40 ns Q2 19 4o 1 Turn-Off Delay Tlme Q1 32 so ns Q2 so 100 1 Turn-Off Fall Trrne Q1 19 34 ns Q2 37 70 Q Tolal Gale Charge Q1 14 20 nC Q2 14 20 Q Gale-Source Charge Q1 2.6 nC Q2 3.0 Q Gale-Dram Charge Q1 3.7 nC Q2 3.9
FDW2520C Rev C1(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
Q1
Q2
20
–20
V
∆BVDSS
===∆TJ
Breakdown Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
Q1
Q2
14
–17
mV/°C
IDSS Zero Gate Voltage Drain
Current
VDS = 16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V
Q1
Q2
1
–1 µA
IGSS Gate-Body Leakage VGS = +12 V, VDS = 0 V
VGS = +12 V, VDS = 0 V
Q1
Q2
+100
+100
nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
Q1
Q2
0.4
–0.4
1.0
–1.0
1.5
–1.5
V
∆VGS(th)
===∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
Q1
Q2
–3.3
3.1
mV/°C
RDS(on) Static Drain-Source
On-Resistance
VGS = 4.5 V, ID = 6 A
VGS = 2.5 V, ID = 5 A
VGS = 4.5 V, ID = 6 A, TJ = 125°C
Q1 14
19
19
18
28
29
mΩ
VGS = –4.5 V, ID = –4.4 A
VGS = –2.5 V, ID = –3.3 A
VGS = –4.5 V, ID = –4.4 A, TJ = 125°C
Q2 28
43
39
35
57
56
mΩ
ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5 V
VGS = –4.5 V, VDS = –5 V
Q1
Q2
30
–30
A
gFS Forward Transconductance VDS = 5 V, ID = 6 A
VDS = –5 V, ID = –4.4 A
Q1
Q2
30
17
S
Dynamic Characteristics
Ciss Input Capacitance Q1
Q2
1325
1330
pF
Coss Output Capacitance Q1
Q2
358
552
pF
Crss Reverse Transfer
Capacitance
Q1:
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Q2:
VDS = –10 V, VGS = 0 V,
f = 1.0 MHz
Q1
Q2
168
153
pF
Switching Characteristics
td(on) Turn-On Delay Time Q1
Q2
6
12
20
25
ns
trTurn-On Rise Time Q1
Q2
11
19
40
40
ns
td(off) Turn-Off Delay Time Q1
Q2
32
60
60
100
ns
tfTurn-Off Fall Time
Q1:
VDD = 10 V, ID = 1 A,
VGS = 4.5V, RGEN = 6 Ω
Q2:
VDD = –10 V, ID = –1 A,
VGS = –4.5V, RGEN = 6 Ω
Q1
Q2
19
37
34
70
ns
QgTotal Gate Charge Q1
Q2
14
14
20
20
nC
Qgs Gate-Source Charge Q1
Q2
2.6
3.0
nC
Qgd Gate-Drain Charge
Q1:
VDS = 10 V, ID = 6 A,
VGS = 4.5 V
Q2:
VDS = –5 V, ID = –4.4 A,
VGS = –4.5 V
Q1
Q2
3.7
3.9
nC
FDW2520C
Maximum Commuous Drain-Source Dwode Forward Current 01 0 83 02 40,83 Dram-Source Dwode Forward VI .83 A LN 01 0.5 1,2 Vohage V, I; 40.83A (Nutezy 02 40,7 71 2
FDW2520C Rev C1(W)
Electrical Characteristics (continued) TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current Q1
Q2
0.83
–0.83
A
VSD Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 0.83 A (Note 2)
VGS = 0 V, IS = –0.83 A (Note 2)
Q1
Q2
0.5
–0.7
1.2
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW2520C
FDW2520C Rev C1(W)
Typical Characteristics: Q1
0
5
10
15
20
25
30
00.511.522.53
VDS, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
1.5V
2.5V 2.0V
VGS = 4.5V
0.8
1
1.2
1.4
1.6
1.8
2
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 2.0V
3.5V
3.0V
4.0V
4.5V
2.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
ID = 6A
VGS = 4.5V
0
0.01
0.02
0.03
0.04
0.05
0.06
12345
VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = 3 A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.511.522.5
VGS, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A
)
TA = -55oC25oC
125oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A
)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2520C
FDW2520C Rev C1(W)
Typical Characteristics: Q1
0
1
2
3
4
5
0246810121416
Qg, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
ID = 6A VDS = 5V
15V
10V
0
250
500
750
1000
1250
1500
1750
2000
0 4 8 12 16 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
RDS(ON) LIMIT
VGS = 4.5V
SINGLE PULSE
RθJA = 208 oC/W
TA = 25oC
10ms
1ms
0
20
40
60
80
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 208 °C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
FDW2520C
FDW2520C Rev C1(W)
Typical Characteristics: Q2
0
10
20
30
0123
– VDS, DRAIN-SOURCE VOLTAGE (V)
– I
D
, DRAIN CURRENT (A)
-4.0V -3.0V
-2.5V
-2.0V
VGS = -4.5V -3.5V
0.8
1
1.2
1.4
1.6
1.8
2
0 5 10 15 20 25 30
-ID, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -2.5V
-4.0V
-3.5V
-4.5V
-3.0V
Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
ID = -4.4A
VGS = - 4.5V
0
0.02
0.04
0.06
0.08
0.1
0.12
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = -4.4 A
TA = 125oC
TA = 25oC
Figure 13. On-Resistance Variation with
Temperature. Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
01234
-VGS, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
TA = -55oC25oC
125o
VDS = - 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A
)
TA = 125oC
25oC-55oC
VGS = 0V
Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2520C
,3 5:95.13: in. :2 3:52an #23:» 5355 w: of: 831:3: :: £555 :55 J
FDW2520C Rev C1(W)
Typical Characteristics: Q2
0
1
2
3
4
5
0 3 6 9 12 15
Qg, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = - 4.4A
-10V
–15V
VDS = - 5V
0
300
600
900
1200
1500
1800
2100
0 5 10 15 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
RDS(ON) LIMIT
VGS = 4.5V
SINGLE PULSE
RθJA = 208oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA =208 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2520C
— FAIRCHILD — SE M‘CDNDUCTDP' \m: wer hancmsn vaereW SYSTEM nmnam
Rev. I35
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is
not intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
SyncFET™
®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.