n Industry Common Pinout n Commercial or Industrial Temperature Range n TTL or CMOS Drive Capability n Hermetic Package 3.3 V Supply

The F-Type Voltage Controlled Crystal Oscillator (VCXO) is used in a phase lock loop applications including clock recovery and frequency translation applications. The metal package is grounded for improved EMI performance.

Table 1. Pin Function Pin Symbol VC 7 GND 8 Output 14 VDD Function VCXO Control Voltage Case Ground VCXO Output Power Supply Voltage V �10%)

Table 2. Electrical Performance Parameter Operating Temperature Range 1 Center Frequency Absolute Pull Range 2 Supply Voltage Supply Current 3 Output Voltage Levels Output High Output Low 3 Transition times Rise Time Fall Time Fanout Start-Up Time Control Voltage Fanout Symbol To f0 VDD IDD VOH VOL TR TF tsu VC Fo Minimum Typical Maximum (+/-10%) 0.45 mA/MHz 35 0.9 VDD 0.1 VDD 0.1 VDD 10 TTL Units �C MHz ppm V ns TTL ms V Loads

1. Other frequencies may be available, please contact factory with your special requirements. 0.1 �F low frequency tantalum bypass capacitor in parallel with 0.01 �F high frequency ceramic capacitor is recommended. Both should be located as close to the FTU-Type bias pin as is practical 3. Figure 1 defines these parameters. Figure 2 illustrates the equivalent TTL load and operating conditions under which these parameters are specified and tested.

Vectron International� 267 Lowell Road, Hudson, NH 03051� Tel: 1-88-VECTRON-1� http://www.vectron.com

Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. VTI employs a human-body model (HBM) and a chargeddevice model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used to define the mode. Although no industrywide standard has been adopted for the CDM, a standard HBM (resistance = 1500, capacitance 100pF) is widely used and therefore can be used for comparison purposes. The HBM ESD threshold presented here was obtained by using these circuit parameters. Table 3. ESD Threshold Voltage Model Threshold Human-Body (HBM) 1000* Charged-Device (CDM) 500

Mechanical Shock Mechanical Vibration Temperature Cycle Gross Leak Fine Leak Seal Strength Bend Test Marking Storage Temperature A 100% Deionized Water 1014.7 2 lbs Perpendicular to Top and Bottom to 125�C

USA: Vectron International� 267 Lowell Road, Hudson, NH 03051� Tel: 1-88-VECTRON-1� Fax: 1-888-FAX-VECTRON EUROPE: Tel: Fax: ASIA: Tel: Fax: I rev 4/27/98, 08/16/02 Vectron International reserves the right to make changes to the product(s) and/or information contained herein without notice. No liability is assumed as a result of their use or application. No rights under any patent accompany the sale of any such product(s) or information.